IXYS DHG20C600QB High performance fast recovery diode low loss and soft recovery common cathode Datasheet

DHG 20 C 600QB
advanced
V RRM = 600 V
I FAV = 2x 10 A
t rr =
35 ns
Sonic-FRD
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
1
2
3
Part number (Marking on product)
DHG 20 C 600QB
Features / Advantages:
Applications:
Package:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable
operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
TO-3P
● Industry standard outline
- compatible with TO-247
● Epoxy meets UL 94V-0
● RoHS compliant
Ratings
Symbol
Definition
VRRM
max. repetitive reverse voltage
IR
reverse current
VF
Conditions
forward voltage
I FAV
average forward current
VF0
rF
threshold voltage
slope resistance
min.
TVJ = 25 °C
thermal resistance junction to case
600
V
TVJ = 25 °C
15
µA
TVJ = 125 °C
1.5
mA
I F = 10 A
I F = 20 A
TVJ = 25 °C
2.35
V
I F = 10 A
I F = 20 A
TVJ = 125 °C
2.20
V
V
rectangular, d = 0.5
T C = 100 °C
10
A
T VJ = 150 °C
1.20
93
V
mΩ
1.80
K/W
V
TVJ
Ptot
total power dissipation
I FSM
max. forward surge current
I RM
max. reverse recovery current
t rr
reverse recovery time
CJ
junction capacitance
EAS
non-repetitive avalanche energy
I AR
repetitive avalanche current
VA = 1.5·VR typ.; f = 10 kHz
150
°C
= 25 °C
-55
70
W
t p = 10 ms (50 Hz), sine
TVJ = 45 °C
100
A
I F = 10 A;
TVJ = 25 °C
TVJ = 125 °C
4
A
A
VR = 400 V
TVJ = 25 °C
TVJ = 125 °C
35
ns
ns
VR = 300 V; f = 1 MHz
TVJ = 25 °C
I AS =
TVJ = 25 °C
TC
-diF /dt = 200 A/µs
A;
L = 100 µH
* Data according to IEC 60747and per diode unless otherwise specified
pF
tbd
mJ
tbd
A
0614
© 2006 IXYS all rights reserved
Unit
VR = 600 V
virtual junction temperature
IXYS reserves the right to change limits, conditions and dimensions.
max.
VR = 600 V
for power loss calculation only
R thJC
typ.
DHG 20 C 600QB
advanced
Ratings
Symbol
Definition
Conditions
I RMS
RMS current
per pin*
R thCH
thermal resistance case to heatsink
MD
mounting torque
FC
mounting force with clip
T stg
storage temperature
min.
typ.
max.
Unit
A
0.25
K/W
0.8
1.2
Nm
20
120
N
-55
150
°C
Weight
5
g
* Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
Outlines TO-3P
SYM
MIN
MAX
MIN
MAX
A
A1
A2
b
b2
b4
c
D
D1
E
E1
e
L
L1
ØP
ØP1
S
© 2006 IXYS all rights reserved
* Data according to IEC 60747and per diode unless otherwise specified
0614
IXYS reserves the right to change limits, conditions and dimensions.
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