Rohm EMA11 Emitter common (dual digital transistors) Datasheet

EMA11 / UMA11N / FMA11A
Transistors
Emitter common (dual digital transistors)
EMA11 / UMA11N / FMA11A
!External dimensions (Units : mm)
!Features
1) Two DTA143Z chips in a EMT or UMT or SMT
package.
2) Mounting cost and area can be cut in half.
1.3
2.0
0.65 0.65
(1)
(5)
(2)
0.2
(4)
(3)
EMA11 / UMA11N
1.25
!Structure
Epitaxial planar type
PNP silicon transistor
(Built-in resistor type)
0to0.1
0.1Min.
ROHM : UMT5
EIAJ : SC-88A
The following characteristics apply to both DTr1 and DTr2.
0.9
0.7
0.15
2.1
All terminals have same dimensions
Abbreviated symbol: A11
0.95 0.95
1.9
2.9
1.1
(5)
(1)
!Equivalent circuit
0.8
(4)
0.3
(2)
(3)
FMA11A
1.6
(2)
R2
(1)
R1
DTr1
R2
(4)
(3)
R1
DTr2
(5)
R2
2.8
(4)
(2)
R1=4.7kΩ
R2=47kΩ
(5)
R1
DTr1
R2
0.3to0.6
ROHM : SMT5
EIAJ : SC-74A
(1)
R1=4.7kΩ
R2=47kΩ
!Packaging specifications
Taping
Package
Type
Code
T2R
TR
T148
Basic ordering unit (pieces)
8000
3000
3000
−
−
EMA11
UMA11N
−
FMA11A
−
−
−
!Absolute maximum ratings (Ta = 25°C)
Parameter
Supply voltage
VCC
Input voltage
VIN
Output current
Power
dissipation
Symbol
EMA11 / UMA11N
Limits
−50
−30
IO
−100
−100
Pd
V
V
5
IC (Max.)
FMA11A
Unit
150 (TOTAL)
mA
mW
300 (TOTAL)
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55~+150
°C
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
∗1
∗2
0to0.1
(3)
R1
DTr2
FMA11A
0.15
EMA11 / UMA11N
All terminals have same dimensions
Abbreviated symbol: A11
EMA11 / UMA11N / FMA11A
Transistors
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Min.
Typ.
Max.
VI (off)
−
−
−0.5
VI (on)
−1.3
−
−
VO (on)
−
−0.1
−0.3
V
Input voltage
Output voltage
V
II
−
−
−1.8
mA
−
−
−0.5
µA
GI
80
−
−
−
DC current gain
Conditions
VCC=−5V, IO=−100µA
VO=−0.3V, IO=−5mA
IO (off)
Input current
Output current
Unit
IO/II=−5mA/−0.25mA
VI=−5V
VCC=−50V, VI=0V
VO=−5V, IO=−10mA
Transition frequency
fT
−
250
−
MHz
Input resistance
R1
3.29
4.7
6.11
kΩ
−
Resistance ratio
R2/R1
8
10
12
−
−
∗
VCE=10mA, IE=−5mA, f=100MHz
∗ Transition frequency of the device
!Electrical characteristic curves
−10m
VO=−0.3V
OUTPUT CURRENT : Io (A)
INPUT VOLTAGE : VI (on) (V)
−20
−10
−5
Ta=−40°C
25°C
100°C
−2
−1
−500m
−200m
−100m
−500µ −1m −2m
−5m −10m −20m
−50m −100m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current
(ON characteristics)
−1
OUTPUT VOLTAGE : VO (on) (V)
−200m
500
−2m
−1m
−500µ
Ta=100°C
25°C
−40°C
−200µ
−100µ
−50µ
−20µ
−10µ
lO/lI=20
Ta=100°C
25°C
−40°C
−100m
−50m
−20m
−10m
−5m
−2m
−1m
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m −100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output
current
VO=−5V
200
Ta=100°C
25°C
−40°C
100
50
20
10
5
−5µ
2
−2µ
−100µ −200µ
−500m
1k
VCC=−5V
−5m
−50
DC CURRENT GAIN : GI
−100
−1µ
0
−0.5
−1
−1.5
−2
−2.5
INPUT VOLTAGE : VI (off) (V)
Fig.2 Output current vs. input voltage
(OFF characteristics)
−3
1
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m−100m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current
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