Infineon IPD350N06LG Optimosâ® power-transistor features for fast switching converters and sync. rectification Datasheet

IPD350N06L G
OptiMOS® Power-Transistor
Product Summary
Features
• For fast switching converters and sync. rectification
• N-channel enhancement - logicl level
V DS
60
V
R DS(on),max
35
mΩ
ID
29
A
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant
Type
IPD350N06L G
Package
PG-TO252-3
Marking
350N06L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
29
T C=100 °C
20
Unit
A
Pulsed drain current
I D,pulse
T C=25 °C1)
116
Avalanche energy, single pulse
E AS
I D=29 A, R GS=25 Ω
80
mJ
Reverse diode dv /dt
dv /dt
I D=29 A, V DS=48 V,
di /dt =200 A/µs,
T j,max=175 °C
6
kV/µs
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
T C=25 °C
IEC climatic category; DIN IEC 68-1
1)
±20
V
68
W
-55 ... 175
°C
55/175/56
See figure 3
Rev. 1.3
page 1
2008-09-01
IPD350N06L G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
2.2
minimal footprint
-
-
75
6 cm2 cooling area2)
-
-
50
Thermal characteristics
Thermal resistance, junction - case
R thJC
SMD version, device on PCB
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
60
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=28 µA
1.2
1.6
2
Zero gate voltage drain current
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
-
0.01
1
V DS=60 V, V GS=0 V,
T j=125 °C
-
1
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=29 A
-
27
35
mΩ
V GS=4.5 V, I D=19 A
-
36
47
-
1.4
-
Ω
16
32
-
S
Gate resistance
RG
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=29 A
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for
drain connection. PCB is vertical in still air.
Rev. 1.3
page 2
2008-09-01
IPD350N06L G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
600
800
-
150
200
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
40
60
Turn-on delay time
t d(on)
-
6
9
Rise time
tr
-
21
32
Turn-off delay time
t d(off)
-
29
44
Fall time
tf
-
20
30
Gate to source charge
Q gs
-
2
3
Gate charge at threshold
Q g(th)
-
1
1.3
Gate to drain charge
Q gd
-
6
9
Switching charge
Q sw
-
8
11
Gate charge total
Qg
-
10
13
Gate plateau voltage
V plateau
-
4.2
-
Output charge
Q oss
-
6
7
-
-
29
-
-
116
-
0.98
1.3
V
-
40
50
ns
-
36
45
nC
V GS=0 V, V DS=30 V,
f =1 MHz
V DD=30 V, V GS=10 V,
I D=29 A, R G=11 Ω
pF
ns
Gate Charge Characteristics3)
V DD=30 V, I D=29 A,
V GS=0 to 5 V
V DD=30 V, V GS=0 V
nC
V
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
3)
T C=25 °C
V GS=0 V, I F=29 A,
T j=25 °C
V R=30 V, I F=I S,
di F/dt =100 A/µs
A
See figure 16 for gate charge parameter definition
Rev. 1.3
page 3
2008-09-01
IPD350N06L G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
80
30
70
25
60
20
I D [A]
P tot [W]
50
40
15
30
10
20
5
10
0
0
0
50
100
150
200
0
50
100
T C [°C]
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
101
limited by on-state
resistance
1 µs
2
10
0.5
10 µs
100
101
1 ms
DC
0.2
Z thJC [K/W]
I D [A]
100 µs
10 ms
0.1
0.05
10-1
0.02
0
10
0.01
single pulse
10-1
10-2
-1
10
0
1
10
10
2
10
V DS [V]
Rev. 1.3
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
page 4
2008-09-01
IPD350N06L G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
80
60
10 V
5.5 V
4V
3.5 V
3V
5V
50
60
I D [A]
40
R DS(on) [mΩ]
4.5 V
30
4V
4.5 V
40
5V
5.5 V
10 V
20
20
3.5 V
10
3V
0
0
0
1
2
0
3
10
20
V DS [V]
30
40
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
60
50
50
40
40
g fs [S]
I D [A]
30
30
20
20
10
10
175 °C
25 °C
0
0
0
1
2
3
4
5
V GS [V]
Rev. 1.3
0
10
20
30
40
50
60
I D [A]
page 5
2008-09-01
IPD350N06L G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=29 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
100
2.5
80
2
60
V GS(th) [V]
R DS(on) [mΩ]
280 µA
98 %
40
1.5
28 µA
1
typ
20
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
T j [°C]
60
100
140
180
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
102
175 °C 98%
25 °C
103
I F [A]
C [pF]
Ciss
175 °C
101
25 °C 98%
Coss
102
100
Crss
101
10-1
0
10
20
30
40
50
V DS [V]
Rev. 1.3
0
1
2
3
V SD [V]
page 6
2008-09-01
IPD350N06L G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=29 A pulsed
parameter: T j(start)
parameter: V DD
102
12
30 V
10
12V
25 °C
48 V
8
V GS [V]
I AV [A]
100 °C
101
150 °C
6
4
2
100
0
100
101
102
103
0
5
t AV [µs]
10
15
20
Q gate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
75
V GS
Qg
V BR(DSS) [V]
70
65
V g s(th)
60
55
Q g (th)
Q sw
Q gs
50
-60
-20
20
60
100
140
Q gate
Q gd
180
T j [°C]
Rev. 1.3
page 7
2008-09-01
IPD350N06L G
PG-TO252-3: Outline
Rev. 1.3
page 8
2008-09-01
IPD350N06L G
Rev. 1.3
page 9
2008-09-01
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