MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# BCW66H Features NPN Small l Ideally Suited for Automatic Insertion l 150oC Junction Temperature l Low Current, Low Voltage l Epitaxial Planar Die Construction Signal Transistor 330mW Mechanical Data SOT-23 l Case: SOT-23, Molded Plastic l Terminals: Solderable per MIL-STD-202, Method 208 A D l Marking: EH l Weight: 0.008 grams ( approx.) C B Maximum Ratings @ 25oC Unless Otherwise Specified F Charateristic Symbol VCEO Value Unit 45 V Collector-Base Voltage VCBO 75 V Emitter-Base Voltage VEBO 5 V Collector Current(DC) IC 800 mA Peak Collector Current ICM 1000 mA Base Current(DC) IB 100 mA Peak Base Current IBM 200 mA Power Dissipation@T s=79oC Thermal Resistance, Junction to Ambient Air Thermal Resistance, Junction to Soldering Point Pd 330 mW Collector-Emitter Voltage Operating & Storage Temperature RθJA 285(1) o RθJS 215 o Tj, TSTG -55~150 Notes: C/W E H G K DIMENSIONS DIM A B C D E F G H J K INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Suggested Solder Pad Layout C/W .031 .800 o C J .035 .900 .079 2.000 (1) Mounted on FR-4 printed-circuit board .037 .950 .037 .950 www.mccsemi.com inches mm MCC BCW66H Electrical Characteristics Parameter Ratings at 25°C ambient temperature unless otherwise specified. Symbol Min. TYP. Max. Unit hFE hFE hFE hFE 80 180 250 – – – – 630 – – – Collector-Emitter Saturation Voltage at IC = 100mA, IB = 10mA at IC = 500mA, IB = 50mA VCEsat VCEsat – – – – 0.3 0.7 V V Base-Emitter Saturation Voltage(1) at IC = 100mA, IB = 10mA at IC = 500mA, IB = 50mA VBEsat VBEsat – – – – 1.25 2 V V Collector-Emitter Breakdown Voltage at IC = 10mA, IB = 0 V(BR)CEO 45 – – V Collector-Base Breakdown Voltage at IC = 10µA, IB = 0 V(BR)CBO 75 – – V Emitter-Base Breakdown Voltage at IE = 10µA, IC = 0 V(BR)EBO 5 – – V Collector-Base Cut-off Current at VCB = 45V, IE = 0 at VCB = 45V, IE = 0, TA = 150°C ICBO ICBO – – – – 20 20 nA µA IEBO – – 20 nA fT – 100 – MHZ Collector-Base Capacitance at VCB = 10V, f = 1MHz CCB – 6 – pF Emitter-Base Capacitance at VEB = 0.5V, f = 1MHz CEB – 60 – pF DC Current Gain(1) at VCE = 10V, IC = 100µA at VCE = 1V, IC = 10mA at VCE = 1V, IC = 100mA at VCE = 2V, IC = 500mA 100 (1) Emitter-Base Cut-off Current at VEB = 4V, IC = 0 Gain-Bandwidth Product at VCE = 10V, IC = 20mA, f = 100MHz Note: (1) Pulse test: t ≤ 300µs, D = 2% www.mccsemi.com