Fairchild FJD5553 Npn silicon transistor Datasheet

FJD5553
NPN Silicon Transistor
High Voltage Switch Mode Application
• Fast Speed Switching
• Wide Safe Operating Area
• Suitable for Electronic Ballast Application
DPAK
Marking : J5553
1
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings *
Symbol
TC=25°C unless otherwise noted
Value
Units
BVCBO
Collector-Base Voltage
Parameter
1050
V
BVCEO
Collector-Emitter Voltage
400
V
BVEBO
Emitter-Base Voltage
14
V
IC
Collector Current (DC)
3
A
ICP
Collector Current (Pulse)
6
A
IB
Base Current (DC)
1
A
IBP
Collector Current (Pulse)
2
A
PC
Collector Dissipation
1.25
W
TJ
Junction Temperature
150
°C
TSTG
Storage Junction Temperature Range
- 55 ~ 150
°C
Value
Units
100
°C/W
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics T =25°C unless otherwise noted
a
Symbol
RθJA
Parameter
Thermal Resistance, Junction to Ambient
* Device mounted on minimum pad size
Ordering Information
Part Number
Marking
Package
Packing Method
FJD5553TM
J5553
D-PAK
Tape & Reel
© 2008 Fairchild Semiconductor Corporation
FJD5553 Rev. A1
Remarks
www.fairchildsemi.com
1
FJD5553 — NPN Silicon Transistor
April 2008
Symbol
Parameter
Conditions
Min.
Typ.
Max
Units
BVCBO
Collector-Base Breakdown Voltage
IC=500µA, IE=0
1050
V
BVCEO
Collector-Emitter Breakdown Voltage
IC=5mA, IB=0
400
V
BVEBO
Emitter-Base Breakdown Voltage
IE=500µA, IC=0
14
V
VCE=5V, IC=10mA
10
VCE=3V, IC=0.4A
30
hFE
* DC
Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
IC=1A, IB=0.2A
VBE(sat)
Base-Emitter Saturation Voltage
IC=1A, IB=0.2A
Cob
Output Capacitance
VCB=10V, f=1MHz
tON
Turn On Time
tSTG
Storage Time
VCC=125V, IC=0.5A
IB1=45mA, IB2=0.5A
RL=250Ω
tF
Fall Time
tON
Turn On Time
tSTG
Storage Time
tF
Fall Time
EAS
Avalanche Energy
60
0.23
0.5
V
1.2
V
45
pF
1.0
µs
1.2
µs
µs
0.3
VCC=250V, IC=2.5A
IB1=0.5A, IB2=1.0A
RL=100Ω
3.5
L= 2mH
2.0
µs
2.5
µs
0.3
µs
mJ
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
© 2008 Fairchild Semiconductor Corporation
FJD5553 Rev. A1
www.fairchildsemi.com
2
FJD5553 — NPN Silicon Transistor
Electrical Characteristics * TC=25°C unless otherwise noted
1000
o
o
Ta = 125 C
VCE = 5V
VCE(sat) [mV], SATURATION VOLTAGE
Ta = 75 C
hFE, DC CURRENT GAIN
100
o
o
Ta = 25 C
Ta = - 25 C
10
1
0.01
0.1
1
IC = 5 I B
o
Ta = 125 C
o
o
Ta = 25 C
100
0.01
10
Ta = - 25 C
o
Ta = 75 C
0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. Saturation Voltage
tSTG
o
1
Ta = 25 C
o
tSTG & tF [ns], SWITCHING TIME
VBE(sat) [V], SATURATION VOLTAGE
1000
IC = 5 IB
Ta = - 25 C
o
Ta = 75 C
o
Ta = 125 C
0.1
0.01
0.1
1
100
10
0.1
10
1
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 3. Saturation Voltage
Figure 4. Resistive Load Switching
1.5
tSTG
PC[W], POWER DISSIPATION
tSTG & tF [ns], SWITCHING TIME
10000
1000
tF
100
VCC=250V
IB1=0.5A, IB2=1.0A
1.2
0.9
0.6
0.3
0.0
10
0.1
1
0
10
IC [A], COLLECTOR CURRENT
25
50
75
100
125
150
175
o
Tc[ C], CASE TEMPERATURE
Figure 5. Resistive Load Switching
Figure 6. Power Derating
© 2008 Fairchild Semiconductor Corporation
FJD5553 Rev. A1
tF
VCC=125V
IB1=45mA, IB2=0.5A
www.fairchildsemi.com
3
FJD5553 — NPN Silicon Transistor
Typical Characteristics
FJD5553 — NPN Silicon Transistor
Mechanical Dimensions
D-PAK
Dimensions in Millimeters
© 2008 Fairchild Semiconductor Corporation
FJD5553 Rev. A1
www.fairchildsemi.com
4
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Rev. I31
© 2008 Fairchild Semiconductor Corporation
FJD5553 Rev. A1
www.fairchildsemi.com
5
FJD5553 NPN Silicon Transistor
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