AVAGO MSA-0470 Cascadable silicon bipolar mmic amplifier Datasheet

MSA-0470
Cascadable Silicon Bipolar MMIC Amplifier
Data Sheet
Description
Features
The MSA-0470 is a high performance silicon bipolar
Monolithic Microwave Integrated Circuit (MMIC) housed
in a hermetic, high reliability package. This MMIC is
designed for use as a general purpose 50Ω gain block.
Typical applications include narrow and broad band IF
and RF amplifiers in industrial ­and military applications.
• Cascadable 50Ω Gain Block
The MSA-series is fabricated using Avago’s 10 GHz fT,
25 GHz fMAX, silicon bipolar MMIC process which uses
nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and
reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
• Hermetic Gold-ceramic Microstrip Package
70 mil Package
Typical Biasing Configuration
• 3 dB Bandwidth: DC to 4.0 GHz
• 12.5 dBm Typical P1 dB at 1.0 GHz
• 8.5 dB Typical Gain at 1.0 GHz
• Unconditionally Stable (k>1)
Rbias
VCC > 7 V
RFC (Optional)
4
Cblock
IN
3
1
Cblock
OUT
MSA
2
Vd = 5.25 V
MSA-0470 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Absolute Maximum[1]
100 mA
650 mW
+13 dBm
200°C
–65 to 200°C
Thermal Resistance[2,4]:
θjc = 115°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 8.7 mW/°C for TC > 125°C.
4. The small spot size of this technique results in a higher, though more accurate determination
of θjc than do alternate methods.
Electrical Specifications[1], TA = 25°C
Symbol
GP
∆GP
f3 dB
VSWR
NF
P1 dB
IP3
tD
Vd
dV/dT
Parameters and Test Conditions: Id = 50 mA, ZO = 50 Ω
Min.
Typ.
Max.
Power Gain (|S21
f = 0.1 GHz
dB
7.5
Gain Flatness
f = 0.1 to 2.5 GHz
dB
3 dB Bandwidth
GHz
Input VSWR
f = 0.1 to 2.5 GHz
Output VSWR
f = 0.1 to 2.5 GHz
50 Ω Noise Figure
f = 1.0 GHz
dB
Output Power at 1 dB Gain Compression
f = 1.0 GHz
dBm
Third Order Intercept Point
f = 1.0 GHz
dBm
Group Delay
f = 1.0 GHz
psec
Device Voltage
V
4.75
Device Voltage Temperature Coefficient
mV/°C
8.5
±0.6
4.0
1.7:1
2.0:1
6.5
12.5
25.5
125
5.25
–8.0
9.5
±1.0
| 2)
Note:
1. The recommended operating current range for this device is 30 to 70 mA.
Typical performance as a function of current is on the following page.
Units
5.75
MSA-0470 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 50 mA)
Freq.
GHz
Mag
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
.18
.18
.18
.17
.16
.16
.16
.21
.26
.32
.37
.40
.41
.42
S11
Ang
dB
S21
Mag
Ang
dB
179
179
179
–179
–176
–174
–166
–163
–162
–170
–177
175
166
155
8.5
8.5
8.5
8.5
8.4
8.3
8.2
7.8
7.3
6.5
5.7
4.7
3.9
3.1
2.67
2.67
2.67
2.65
2.64
2.61
2.56
2.46
2.33
2.12
1.93
1.73
1.57
1.44
176
172
163
155
147
138
117
97
83
65
38
33
20
7
–16.4
–16.4
–16.4
–16.2
–16.1
–15.9
–15.5
–14.6
–13.8
–13.5
–13.2
–12.6
–12.4
–11.9
S12 Mag
Ang
Mag
.151
.151
.152
.155
.158
.161
.169
.186
.204
.212
.220
.234
.239
.255
.10
.10
.13
.16
.19
.22
.29
.33
.36
.40
.40
.40
.39
.37
1
2
3
5
8
6
9
9
12
10
7
3
–1
–6
S22
–14
–30
–50
–67
–79
–90
–111
–131
–142
–156
–164
–170
–173
–176
Typical Performance, TA = 25°C (unless otherwise noted)
12
80
TC = +125C
TC = +25C
TC = –55C
10
Gain Flat to DC
Id (mA)
Gp (dB)
60
8
6
40
4
20
2
0
0.1
0.3 0.5
1.0
3.0
0
6.0
1
2
FREQUENCY (GHz)
4
5
6
7
Vd (V)
Figure 1. Typical Power Gain vs. Frequency, TA = 25°C, Id = 50 mA.
Figure 2. Device Current vs. Voltage.
13
P1 dB (dBm)
9
8
12
P1 dB
11
10
7
9
0.1 GHz
1.0 GHz
2.0 GHz
5
4
20
30
40
50
60
8
5
–55
Id (mA)
Figure 3. Power Gain vs. Current.
21
18
NF
–25
+25
6
+85
5
+125
TEMPERATURE (C)
Figure 4. Output Power at 1 dB Gain Compression, NF and
Power Gain vs. Case Temperature, f = 1.0 GHz, Id = 50 mA.
7.5
Id = 70 mA
7
7
6
70
8
GP
7.0
NF (dB)
6
Gp (dB)
Gp (dB)
3
Ang
2.0 GHz
4
20
30
40
50
60
5
–55
70
–25
+25
Id (mA)
Figure 3. Power Gain vs. Current.
Figure 4. Output Power at 1 dB Gain Compression, NF and
Power Gain vs. Case Temperature, f = 1.0 GHz, Id = 50 mA.
21
7.5
18
Id = 70 mA
7.0
NF (dB)
15
12
Id = 50 mA
6.5
9
6.0
Id = 30 mA
6
Id = 30 mA
Id = 50 mA
3
0.1
5.5
0.2 0.3
0.5
1.0
2.0
4.0
Id = 70 mA
0.1
0.2 0.3
0.5
Figure 5. Output Power at 1 dB Gain Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
Ordering Information
No. of Devices
100
Comments
Bulk
70 mil Package Dimensions
.040
1.02
4
GROUND
.020
.508
RF OUTPUT
AND BIAS
RF INPUT
3
1
2
.004 ± .002
.10 ± .05
GROUND
.070
1.78
.495 ± .030
12.57 ± .76
1.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Part Numbers
MSA-0470
5
+125
TEMPERATURE (C)
Typical Performance, TA = 25°C (unless otherwise noted)
P1 dB (dBm)
+85
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.035
.89
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries.
Data subject to change. Copyright © 2008 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-2764EN
AV02-1226EN - May 14, 2008
2.0
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