Eudyna FSX027WF General purpose gaas fet Datasheet

FSX027WF
General Purpose GaAs FET
FEATURES
•
•
•
•
Medium Power Output: P1dB=24.5dBm(Typ.)@8.0GHz
High Power Gain: G1dB=10dB(Typ.)@8.0GHz
Hermetic Metal/Ceramic Package
Proven Reliability
DESCRIPTION
The FSX027WF is a general purpose GaAs FET designed for medium
power applications up to the 12GHz. These devices have a wide
dynamic range and are suitable for use in medium power, wide band,
linear drive amplifiers or oscillators.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta = 25°C)
Item
Symbol
Drain-Source Voltage
Condition
VDS
VGS
Gate-Source Voltage
PT
Total Power Dissipation
Unit
Rating
Tc = 25°C
12
-5
V
1.5
W
V
Storage Temperature
TSTG
-65 to 175
°C
Channel Temperature
TCH
175
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 8 volts.
2. The forward and reverse gate currents should not exceed 1.4 and -0.2 mA respectively with
gate resistance of 1000Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Symbol
IDSS
Test Conditions
VDS = 3V, VGS = 0V
Limit
Typ. Max.
Unit
70
110
150
mA
Min.
Transconductance
gm
VDS = 3V, IDS = 54mA
-
100
-
mS
Pinch-off Voltage
Vp
VDS = 3V, IDS = 5.4mA
-0.7
-1.2
-1.7
V
IGS = -5.4µA
-5.0
-
-
V
-
2.5
-
dB
-
9.5
-
dB
24.5
24.5
23.5
14.0
10.0
6.5
-
dBm
dBm
dBm
dB
dB
dB
70
100
°C/W
Gate Source Breakdown Voltage
Noise Figure
Associated Gain
VGSO
NF
Gas
Output Power at 1 dB G.C.P.
P1dB
Power Gain at 1 dB G.C.P.
G1dB
Thermal Resistance
Rth
VDS = 3V, IDS = 30mA
f = 8GHz
f = 4GHz
VDS = 8V,
f = 8GHz 23.5
IDS = 0.7IDSS
f = 12GHz
f = 4GHz
VDS = 8V,
f = 8GHz
9.0
IDS = 0.7IDSS
f = 12GHz
Channel to Case
CASE STYLE: WF
Edition 1.2
July 1999
-
G.C.P.: Gain Compression Point
1
FSX027WF
General Purpose GaAs FET
DRAIN CURRENT vs. DRAIN-SOURCE VOLTA
140
1.5
Drain Current (mA)
Total Power Dissipation (W)
POWER DERATING CURVE
1.2
0.9
0.6
120
VGS = 0V
100
-0.2V
0.3
-0.4V
80
-0.6V
60
-0.8V
40
-1.0V
20
0
50
100
150
-1.2V
2
200
Case Temperature (°C)
4
8GHz
12GHz
25
20
60
f=4GHz
8GHz
16
ηadd
14
12GHz
50
40
30
12
20
10
10
8
P 1dB (dBm)
Pout
18
10
P 1dB vs. VDS
ηadd (%)
Output Power (dBm)
24
22
f=4GHz
IDS = 0.5 IDSS
8
Drain-Source Voltage (V)
OUTPUT POWER vs. INPUT POWER
26 VDS = 8V
6
f = 8GHz
IDS = 0.7 IDSS
23
21
19
17
0
-6 -4 -2 0
2 4
6 8 10 12 14 16 18 20
Input Power (dBm)
4
5
6
7
8
Drain-Source Voltage (V)
FSX027WF
General Purpose GaAs FET
S11
S22
+j50
S21
S12
+90°
+j100
+j25
15GHz
10
2
14
+j10
8
1GHz
4
14
12
6
26
8
4 8 10
8
6
4
2
SCALE FOR |S21| 15GHz 1GHz 10
12
12
.04 14
1GHz
100
50Ω
180°
250
15GHz
6
1GHz
10
2
-j10
4
8
6
-j250
.08
4
.12
1GHz
-j25
.16
-j100
2
SCALE FOR |S12|
0
+j250
12
0°
14
15GHz
-90°
-j50
S11
S-PARAMETERS
VDS =8V, IDS = 75mA
S21
S12
MAG
ANG
MAG
ANG
FREQUENCY
(MHZ)
MAG
ANG
S22
1000
.942
-53.2
6.773
142.1
.021
62.8
.651
-25.8
2000
.852
-91.2
5.211
114.2
.030
47.6
.628
-43.7
3000
.782
-116.0
3.993
94.6
.033
43.1
.635
-56.5
4000
.745
-135.8
3.335
80.7
.035
41.5
.651
-66.8
5000
.710
-155.2
2.994
66.2
.037
44.2
.652
-73.6
6000
.683
-176.8
2.747
51.7
.040
41.3
.642
-83.7
7000
.656
-159.9
2.532
36.2
.048
38.2
.634
-97.6
8000
.638
139.7
2.323
20.2
.054
26.4
.638
-115.9
9000
.618
119.4
2.089
1.4
.057
17.1
.636
-134.5
10000
.601
97.2
1.838
-14.7
.065
3.9
.642
-150.7
MAG
ANG
11000
.592
73.4
1.639
-30.5
.078
-5.1
.646
-168.5
12000
.591
51.8
1.646
-48.3
.087
-28.1
.647
172.6
13000
.600
33.6
1.401
-67.1
.093
-31.1
.651
155.2
14000
.582
19.1
1.409
-82.1
.117
-38.7
.668
139.4
15000
.499
-0.7
1.246
-103.6
.139
-53.2
.705
121.8
Download S-Parameters, click here
3
FSX027WF
General Purpose GaAs FET
1.0 Min.
(0.039)
Case Style "WF"
Metal-Ceramic Hermetic Package
0.1±0.05
(0.004)
2-ø1.6±0.01
(0.063)
1.0 Min.
(0.039)
4
3
0.6
(0.024)
2
2.5 Max.
(0.098)
2.5±0.15
(0.098)
1
2.5
(0.098)
1: Gate
6.1±0.1
(0.240)
8.5±0.2
(0.335)
0.8±0.1
(0.031)
2: Source (Flange)
3: Drain
4: Source (Flange)
Unit: mm (Inches)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS EUROPE, GmbH
Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
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