Vishay BFR193T Silicon npn planar rf transistor Datasheet

BFR193T / BFR193TW
Vishay Semiconductors
Silicon NPN Planar RF Transistor
Features
•
•
•
•
•
1
Low noise figure
High transition frequency fT = 8 GHz
e3
Excellent large-signal behaviour
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
3
2
1
Applications
For low-noise, high-gain applications such as power
amplifiers up to 2GHz and for linear broadband amplifiers.
2
Mechanical Data
3
Electrostatic sensitive device.
Observe precautions for handling.
Typ: BFR193T
Case: SOT-23 Plastic case
Weight: approx. 8.0 mg
13581
Marking: RC
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Typ: BFR193TW
Case: SOT-323 Plastic case
Weight: approx. 6.0 mg
Marking: WRC
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Symbol
Value
Unit
Collector-base voltage
Parameter
Test condition
VCBO
20
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
2
V
IC
80
mA
Ptot
420
mW
Tj
150
°C
Tstg
- 65 to + 150
°C
Symbol
Value
Unit
RthJA
250
K/W
Collector current
Total power dissipation
Tamb ≤ 45 °C
Junction temperature
Storage temperature range
Maximum Thermal Resistance
Parameter
Junction ambient
1)
Test condition
1)
on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu
Document Number 85073
Rev. 1.3, 28-Apr-05
www.vishay.com
1
BFR193T / BFR193TW
Vishay Semiconductors
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Max
Unit
Collector-emitter cut-off current
Parameter
VCE = 20 V, VEB = 0
Test condition
ICES
100
μA
Collector-base cut-off current
VCB = 10 V
ICBO
100
nA
Emitter-base cut-off current
VEB = 1 V, IC = 0
IEBO
1
μA
Collector-emitter breakdown
voltage
IC = 1 mA
Collector-emitter saturation
voltage
IC = 50 mA, IB = 5 mA
DC forward current transfer ratio VCE = 8 V, IC = 30 mA
www.vishay.com
2
Symbol
V(BR)CEO
Min
12
VCEsat
hFE
Typ.
50
V
0.1
0.5
100
150
V
Document Number 85073
Rev. 1.3, 28-Apr-05
BFR193T / BFR193TW
Vishay Semiconductors
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
Symbol
Min
Typ.
Transition frequency
Parameter
VCE = 8 V, IC = 50 mA,
f = 1 GHz
Test condition
fT
6
8
Max
GHz
Unit
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb
0.6
1.0
pF
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Cce
0.25
pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb
1.6
pF
Noise figure
ZS = ZSopt,ZL=50Ω, f = 900
MHz, VCE = 8 V, IC = 10 mA
F
1.2
dB
ZS = ZSopt,ZL=50Ω, f = 2 GHz,
VCE = 8 V, IC = 10 mA
F
2.1
dB
ZS = ZSopt,ZL=50Ω, f = 900
MHz, VCE = 8 V, IC = 30 mA
Gpe
15
dB
ZS = ZSopt,ZL=50Ω, f = 2 GHz,
VCE = 8 V,
IC = 30 mA
Gpe
9
dB
ZO=50Ω, f = 900 MHz,
VCE = 8 V, IC = 30 mA
|S21e|2
13
dB
ZO=50Ω, f = 2 GHz, VCE = 8 V,
IC = 30 mA
|S21e|2
7
dB
IP3
34
dBm
Power gain
Transducer gain
Third order intercept point at
output
VCE = 8 V, IC = 50 mA,
f = 900 MHz
0.175 (.007)
0.098 (.005)
0.1 (.004) max.
0.4 (.016)
0.95 (.037)
1.15 (.045)
Package Dimensions in mm (Inches)
2.6 (.102)
2.35 (.092)
0.4 (.016)
ISO Method E
3.1 (.122)
Mounting Pad Layout
2.8 (.110)
0.52 (0.020)
0.4 (.016)
3
1
0.95 (.037)
1.20(.047)
1.43 (.056)
0.9 (0.035)
2.0 (0.079)
2
0.95 (.037)
0.95 (0.037)
0.95 (0.037)
17418
Document Number 85073
Rev. 1.3, 28-Apr-05
www.vishay.com
3
BFR193T / BFR193TW
Vishay Semiconductors
Package Dimensions in mm (Inches)
0.10 (0.004)
1.00 (0.039)
0.10 (0.004)
SO Method E
10
Mounting Pad Layout
2.05 (0.080)
0.39 (0.015)
1.3 (0.051)
4
2.0 (0.079)
0.95 (0.37)
0.30 (0.012)
www.vishay.com
2.00 (0.078)
1.25 (0.049)
0.9 (0.035)
0.95 (0.037)
96 12236
Document Number 85073
Rev. 1.3, 28-Apr-05
BFR193T / BFR193TW
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85073
Rev. 1.3, 28-Apr-05
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
Similar pages