IRF IRHNA7460SE Transistor n-channel(bvdss=500v, rds(on)=0.32ohm, id=20a) Datasheet

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Provisional Data Sheet No. PD-9.1399A
REPETITIVE AVALANCHE AND dv/dt RATED
IRHNA7460SE
HEXFET® TRANSISTOR
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
500 Volt, 0.32Ω, (SEE) RAD HARD HEXFET
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD
HEXFETs retain identical electrical specifications up
to 1 x 105 Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality and
reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high-energy pulse circuits in space
and weapons environments.
Product Summary
Part Number
BV DSS
RDS(on)
ID
IRHNA7460SE
500V
0.32Ω
20A
Features:
n
n
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 10 5 Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Lightweight
Pre-Radiation
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
I D @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
I AR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current 
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt ƒ
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
To Order
IRHNA7460SE
20
12
80
300
2.4
±20
500
20
30
3.5
-55 to 150
Units
A
W
W/K
V
mJ
A
mJ
V/ns
oC
300 (for 5 sec.)
3.3 (typical)
g
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IRHNA7460SE Device
Pre-Radiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min.
Typ. Max. Units
500
—
—
0.68
—
—
V
V/°C
—
—
2.5
3.5
—
—
—
—
—
—
—
—
0.32
0.36
4.5
—
50
250
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.0
100
-100
260
40
200
45
140
140
110
—
LS
Internal Source Inductance
—
6.5
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
6400
1100
375
—
—
—
Test Conditions
VGS = 0V, ID = 1.0 mA
Reference to 25°C, I D = 1.0 mA
nC
VGS = 12V, ID =12A
„
VGS = 12V, ID = 20A
VDS = VGS, ID = 1.0 mA
VDS > 15V, I DS = 12A „
VDS = 0.8 x Max Rating,VGS = 0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 20A
VDS = Max. Rating x 0.5
ns
VDD = 250V, ID =20A,
RG = 2.35Ω
Ω
V
S( )
Ω
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
µA
nA
nH
pF
Measured from the
Modified MOSFET
drain lead, 6mm (0.25 symbol showing the
in.) from package to
internal inductances.
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
VGS = 0V, VDS = 25V
f = 1.0 MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
IS
I SM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) 
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
—
—
—
—
20
80
A
Test Conditions
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
Tj = 25°C, I S = 20A, VGS = 0V „
Tj = 25°C, IF = 20A, di/dt ≤ 100A/µs
VDD ≤ 50V „
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
—
—
—
—
—
—
1.8
1200
16
V
ns
µC
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC Board
Min. Typ. Max. Units
—
—
— 0.42
TBD —
To Order
K/W
Test Conditions
Soldered to a copper-clad PC board
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IRHNA7460SE Device
Radiation Characteristics
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hardness assurance program at International Rectifier
uses two radiation environments.
and post-radiation performance are tested and specified using the same drive circuitry and test conditions
in order to provide a direct comparison. It should be
noted that at a radiation level of 1 x 105 Rads (Si), no
change in limits are specified in DC parameters.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of 12 volts per note 6 and a
VDSS bias condition equal to 80% of the device
rated voltage per note 7. Pre- and post-radiation
limits of the devices irradiated to 1 x 105 Rads (Si)
are identical and are presented in Table 1, column 1.
The values in Table 1 will be met for either of the two
low dose rate test circuits that are used. Both pre-
Table 1. Low Dose Rate †
‡
VSD
100K Rads (Si)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage „
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance One
Diode Forward Voltage „
Table 2. High Dose Rate
International Rectifier radiation hardened HEXFETs
have been characterized in neutron and heavy ion
Single Event Effects (SEE) environments. Single
Event Effects characterization is shown in Table 3.
IRHNA7460SE
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)1
High dose rate testing may be done on a special request basis, using a dose rate up to 1 x 1012 Rads
(Si)/Sec.
Test Conditions Š
Units
min.
max.
500
2.0
—
—
—
—
—
4.5
100
-100
50
0.32
nA
µA
Ω
VGS = 0V, ID = 1.0 mA
VGS = VDS , ID = 1.0 mA
VGS = 20V
VGS = -20V
VDS = 0.8 x Max Rating, VGS = 0V
VGS = 12V, ID =12A
—
1.8
V
TC = 25°C, IS = 20A,VGS = 0V
V
ˆ
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Parameter
VDSS
Min. Typ Max. Min. Typ. Max. Units
Test Conditions
—
— 400 —
—
400
V
Applied drain-to-source voltage
during gamma-dot
—
7
—
—
7
—
A
Peak radiation induced photo-current
—
16 —
— 2.3
— A/µsec Rate of rise of photo-current
—
27
—
— 133
—
µH
Circuit inductance required to limit di/dt
Drain-to-Source Voltage
IPP
di/dt
L1
Table 3. Single Event Effects
‰
Parameter
Typ.
Units
Ion
LET (Si)
(MeV/mg/cm2)
Fluence
(ions/cm2)
Range
(µm)
VDS Bias
(V)
VGS Bias
(V)
BVDSS
500
V
Ni
28
1 x 105
~35
400
-5
To Order
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IRHNA7460SE Device
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Radiation Characteristics
† Total Dose Irradiation with VGS Bias.
 Repetitive Rating; Pulse width limited by
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019.
‡ Total Dose Irradiation with VDS Bias.
VDS = 0.8 rated BVDSS (pre-radiation)
applied and V GS = 0 during irradiation per
MlL-STD-750, method 1019.
ˆThis test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
‰ Process characterized by independent laboratory.
Š All Pre-Radiation and Post-Radiation test
conditions are identical to facilitate direct
comparison for circuit applications.
maximum junction temperature.
Refer to current HEXFET reliability report.
‚ @ V DD = 50V, Starting TJ = 25°C,
EAS = [0.5 * L * ( ) * [BVDSS/(BVDSS-VDD)]
Peak IL = 20A, VGS = 12V, 25 ≤ RG ≤ 200Ω
ƒ ISD ≤ 20A, di/dt ≤ 170 A/µs,
VDD ≤ BV DSS, TJ ≤ 150°C
Suggested RG = 2.35Ω
„ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
K/W = °C/W
W/K = W/°C
Case Outline and Dimensions - SMD2
LEADASSIGNMENTS
1 = DRAIN
2 = GATE
3 = SOURCE
NOTES:
1 DIMENSIONINGANDTOLERANCINGPERANSIY14.5M-1982
2. CONTROLLINGDIMENSION: INCH
3. DIMENSIONSARESHOWNINMILLIMETERS(INCHES)
4 DIMENSIONINCLUDESMETALLIZATIONFLASH
5 DIMENSIONDOESNOTINCLUDEMETALLIZATIONFLASH
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Data and specifications subject to change without notice.
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