DMP1045UFY4 P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT ADVANCE INFORMATION Product Summary V(BR)DSS RDS(on) max -12V 32mΩ@ VGS = -4.5V 45mΩ@ VGS = -2.5V 75mΩ@ VGS = -1.8V Features • • • • • • • • ID TA = 25°C -5.5A -4.5A -3.2A Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 3kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • • • • Applications • • • Mechanical Data DC-DC Converters Power management functions Analog Switch Case: X2-DFN2015-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.008 grams (approximate) X2-DFN2015-3 S D G ESD PROTECTED TO 3kV Top View Bottom View Internal Schematic Ordering Information (Note 4) Part Number DMP1045UFY4-7 DMP1045UFY4-13 Notes: Case X2-DFN2015-3 X2-DFN2015-3 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information 15P YM DMP1045UFY4 Document number: DS31853 Rev. 7 - 2 15P = Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) 1 of 6 www.diodes.com September 2012 © Diodes Incorporated DMP1045UFY4 Maximum Ratings (@TA = +25°C, unless otherwise specified.) NEW PRODUCT ADVANCE INFORMATION Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS = -4.5V (Note 6) TA = +25°C TA = +70°C TA = +25°C TA = +70°C Steady State t<5s Value -12 ±8 -5.5 -4.3 ID Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10μs pulse, duty cycle = 1%) Unit V V A -6.5 -5.1 -2.2 -25 IS IDM A A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Notes 6) Operating and Storage Temperature Range Symbol TA = +25°C TA = +70°C Steady state t<5s TA = +25°C TA = +70°C Steady state t<5s Steady state Value 0.7 0.4 193 135 1.7 1.1 73 52 17 -55 to +150 PD RθJA PD RθJA RθJC TJ, TSTG Unit W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -12 - - -1.0 ±10 V μA μA VGS = 0V, ID = -250μA VDS = -12V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) -0.3 RDS (ON) - |Yfs| VSD - -1.0 32 45 75 - V Static Drain-Source On-Resistance -0.55 26 31 51 12 -0.6 VDS = VGS, ID = -250μA VGS = -4.5V, ID = -4.0A VGS = -2.5V, ID = -3.5A VGS = -1.8V, ID = -2.7A VDS = -5V, ID = -4A VGS = 0V, IS = -1A Ciss Coss Crss Rg - 1291 266 242 13 - pF pF pF Ω Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 23.7 14.7 1.8 4.6 14 22 74 75 - nC nC nC nC ns ns ns ns Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistnace SWITCHING CHARACTERISTICS (Note 8) Total Gate Charge (VGS = -8V) Total Gate Charge (VGS = -4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: - mΩ S V Test Condition VDS = -10V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VDS = -10V, ID = -4A VDS = -10V, VGS = -4.5V, RL = 2.5Ω, RG = 3.0Ω 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMP1045UFY4 Document number: DS31853 Rev. 7 - 2 2 of 6 www.diodes.com September 2012 © Diodes Incorporated DMP1045UFY4 20 20 VGS = -8.0V VGS = -4.5V VDS = -5.0V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VGS = -2.0V 15 VGS = -1.8V 10 VGS = -1.5V 5 15 10 5 T A = 150 °C TA = 125°C VGS = -1.2V 0 0 0.5 1.0 1.5 2.0 2.5 -VDS, DRAIN -SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 3.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.12 0.10 0.08 0.06 VGS = -1.8V 0.04 VGS = -2.5V VGS = -4.5V 0.02 0 0 4 8 12 16 -ID, DRAIN SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage TA = -55° C 0 0.5 1.0 1.5 2.0 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 2.5 0.18 0.16 0.14 0.12 ID = -4.0A 0.10 0.08 0.06 0.04 0.02 20 0 0 1 2 3 4 5 6 7 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 8 1.7 0.06 VGS = -4.5V TA = 125°C 0.04 T A = 150 °C TA = 85°C TA = 25°C 0.02 0 T A = 85°C TA = 25°C 0.20 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT ADVANCE INFORMATION VGS = -2.5V TA = -55° C 0 5 10 15 -ID, DRAIN SOURCE CURRENT (A) Fig. 5 Typical On-Resistance vs. Drain Current and Temperature DMP1045UFY4 Document number: DS31853 Rev. 7 - 2 20 3 of 6 www.diodes.com VGS = -2.5V ID = -5A 1.5 1.3 VGS = -4.5V ID = -10A 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature September 2012 © Diodes Incorporated VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.0 0.10 0.08 0.06 VGS = -2. 5V ID = -5A 0.04 VGS = -4.5V ID = -10A 0.02 0.8 -ID = 250µA 0.6 0.4 0.2 0 -50 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 7 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 8 Gate Threshold Variation vs. Ambient Temperature 10,000 20 CT, JUNCTION CAPACITANCE (pF) -IS, SOURCE CURRENT (A) f = 1MHz 16 TA= 25°C 12 8 4 0 0.4 Ciss 1,000 Coss Crss 100 10 1.2 0.6 0.8 1.0 1.4 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Diode Forward Voltage vs. Current 0 2 4 6 8 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Junction Capacitance RDS(on) Limited -ID, DRAIN CURRENT (A) 6 VDS = -10V ID = -4A 4 2 0 12 100 8 -VGS, GATE-SOURCE VOLTAGE (V) NEW PRODUCT ADVANCE INFORMATION DMP1045UFY4 PW = 10µs 10 DC 1 PW = 10s PW = 1s PW = 100ms PW = 10ms PW = 1ms 0.1 T J(max) = 150°C PW = 100µs TA = 25°C VGS = -8V Single Pulse DUT on 1 * MRP Board 0 5 10 15 20 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics DMP1045UFY4 Document number: DS31853 Rev. 7 - 2 25 0.01 0.1 4 of 6 www.diodes.com 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 SOA, Safe Operation Area 100 September 2012 © Diodes Incorporated DMP1045UFY4 D = 0.7 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT ADVANCE INFORMATION 1 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 RθJA(t) = r(t) * RθJA RθJA = 193°C/W Duty Cycle, D = t1/ t2 D = 0.005 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 13 Transient Thermal Resistance 10 100 1,000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A3 A X2-DFN2015-3 Dim Min Max Typ A 0.40 − − A1 0 0.05 0.02 A3 0.13 − − b 0.20 0.30 0.25 D 1.45 1.575 1.50 D2 1.00 1.20 1.10 e 0.50 − − E 1.95 2.075 2.00 E2 0.70 0.90 0.80 L 0.25 0.35 0.30 z − − 0.125 All Dimensions in mm SEATING PLANE A1 z D L e E2 E D2 b Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X Y2 X1 Y1 G X Y Dimensions C G X X1 Y Y1 Y2 Value (in mm) 1.00 0.15 0.31 1.30 0.50 1.00 0.65 C DMP1045UFY4 Document number: DS31853 Rev. 7 - 2 5 of 6 www.diodes.com September 2012 © Diodes Incorporated DMP1045UFY4 NEW PRODUCT ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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