Dallas DS1254YB-100 2m x 8 nv sram with phantom clock Datasheet

DS1254
2M x 8 NV SRAM with Phantom Clock
www.maxim-ic.com
FEATURES
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PACKAGE OUTLINE
Real-time clock (RTC) keeps track of hundredths
of seconds, seconds, minutes, hours, days, date,
months, and years with automatic leap-year
compensation valid up to the year 2100
2M x 8 NV SRAM
Watch function is transparent to RAM operation
Automatic data protection during power loss
Unlimited write-cycle endurance
Surface-mountable BGA module construction
Over 10 years of data retention in the absence of
power
Battery monitor checks remaining capacity daily
+3.3V or +5V operation
Side -A- Shown
(For Reference Only, Not to Scale)
Component placement may vary.
ORDERING INFORMATION
APPLICATIONS
PART
Telecom Switches
Routers
RAID Systems
DS1254WB150
DS1254YB100
DS1254WB2150
DS1254YB2100
TYPICAL OPERATING CIRCUIT
PINPACKAGE
TEMP
RANGE
BGA, 3.3V
0°C to +70°C
BGA, 5V
0°C to +70°C
BGA, 3.3V
0°C to +70°C
BGA, 5V
0°C to +70°C
TOP
MARK
DS1254W150
DS1254Y100
DS1254W2150
DS1254Y2100
PIN DESCRIPTION
VCC
A0–A20
DQ0–DQ7
CE
OE
WE
BW
GND
- Supply Voltage
- Address Inputs
- Data I/O
- Chip-Enable Input
- Output-Enable Input
- Write-Enable Input
- Battery Warning Output
(Open Drain)
- Ground
Note: Some revisions of this device may incorporate deviations from published specifications known as errata. Multiple revisions of any device
may be simultaneously available through various sales channels. For information about device errata, click here: www.maxim-ic.com/errata.
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REV: 082203
DS1254
DESCRIPTION
The DS1254 is a fully nonvolatile static RAM (NV SRAM) (organized as 2M words by 8 bits) with builtin real-time clock. It has a self-contained lithium energy source and control circuitry that constantly
monitors VCC for an out-of-tolerance condition. When such a condition occurs, the DS1254 makes use of
an attached DS3800 battery cap to maintain clock information and preserve stored data while protecting
that data by disallowing all memory accesses. Additionally, the DS1254 has dedicated circuitry for
monitoring the status of an attached DS3800 battery cap.
The phantom clock provides timekeeping information including hundredths of seconds, seconds, minutes,
hours, day, date, month, and year information. The date at the end of the month is automatically adjusted
for months with fewer than 31 days, including correction for leap years. The phantom clock operates in
either 24-hour or 12-hour format with an AM/PM indicator.
Because the DS1254 has a total of 168 balls and only 35 active signals, balls are wired together into
groups, thus providing redundant connections for every signal.
VCC
A16
A15
A11
37
A14
A10
38
A13
A9
39
A12
A8
40
GND
VCC
41
Figure 1. Pin Assignment
VCC
1
A7
2
A6
30
31
32
33
34
35
36
VBAT
Dallas Semiconductor
29
VCC
28
A17
3
27
A18
A5
4
26
A19
GND
5
25
GND
A4
6
24
A20
A3
7
23
CE
A2
8
22
OE
A1
9
21
WE
DS1254
20
19
18
17
16
15
14
13
12
11
10
RECEPTACLES FOR
DS3800 BATTERY CAP
PINS
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BW
DQ7
DQ6
DQ5
DQ4
GND
DQ3
DQ2
DQ1
DQ0
A0
GND
DS1254
RAM READ MODE
The DS1254 executes a read cycle whenever WE is inactive (high) and CE is active (low). The unique
address specified by the 21 address inputs (A0–A20) defines which of the 2MB of data is to be accessed.
Valid data will be available to the eight data-output drivers within tACC (access time) after the last address
input is stable, providing that CE and OE access times and states are also satisfied. If OE and CE access
times are not satisfied, then data access must be measured from the later occurring signal ( CE or OE ) and
the limiting parameter is either tCO for CE or tOE for OE rather than address access.
RAM WRITE MODE
The DS1254 is in the write mode whenever WE and CE are in their active (low) state after address inputs
are stable. The later occurring falling edge of CE or WE will determine the start of the write cycle. The
write cycle is terminated by the earlier rising edge of CE or WE . All address inputs must be kept valid
throughout the write cycle. WE must return to the high state for a minimum recovery time (tWR) before
another cycle can be initiated. The OE control signal should be kept inactive (high) during write cycles to
avoid bus contention. However, if the output bus has been enabled ( CE and OE active), then WE will
disable the outputs in tODW from its falling edge.
DATA RETENTION MODE
The device is fully accessible and data can be written and read only when VCC is greater than VPF.
However, when VCC falls below the power-fail point, VPF (point at which write protection occurs), the
internal clock registers and SRAM are blocked from any access. When VCC falls below VBAT, device
power is switched from the VCC to VBAT. RTC operation and SRAM data are maintained from the battery
until VCC is returned to nominal levels. All signals must be powered down when VCC is powered down.
PHANTOM CLOCK OPERATION
Communication with the phantom clock is established by pattern recognition on a serial bit stream of
64 bits that must be matched by executing 64 consecutive write cycles containing the proper data on
DQ0. All accesses that occur prior to recognition of the 64-bit pattern are directed to memory.
After recognition is established, the next 64 read or write cycles either extract or update data in the
phantom clock, and memory access is inhibited.
Data transfer to and from the timekeeping function is accomplished with a serial bit stream under control
of chip enable ( CE ), output enable ( OE ), and write enable ( WE ). Initially, a read cycle to any memory
location using the CE and OE control of the phantom clock starts the pattern-recognition sequence by
moving a pointer to the first bit of the 64-bit comparison register. Next, 64 consecutive write cycles are
executed using the CE and WE signals of the device. These 64 write cycles are used only to gain access to
the phantom clock. Therefore, any address within the first 512kB of memory, (00h to 7FFFFh) is
acceptable. However, the write cycles generated to gain access to the phantom clock are also writing data
to a location in the memory. The preferred way to manage this requirement is to set aside just one address
location in memory as a phantom clock scratch pad. When the first write cycle is executed, it is compared
to bit 0 of the 64-bit comparison register. If a match is found, the pointer increments to the next location
of the comparison register and awaits the next write cycle. If a match is not found, the pointer does not
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DS1254
advance and all subsequent write cycles are ignored. If a read cycle occurs at any time during pattern
recognition, the present sequence is aborted and the comparison register pointer is reset. Pattern
recognition continues for a total of 64 write cycles as described above until all the bits in the comparison
register have been matched (this bit pattern is shown in Figure 2). With a correct match for 64-bits, the
phantom clock is enabled and data transfer to or from the timekeeping registers can proceed. The next 64
cycles will cause the phantom clock to either receive or transmit data on DQ0, depending on the level of
the OE pin or the WE pin. Cycles to other locations outside the memory block can be interleaved with CE
cycles without interrupting the pattern-recognition sequence or data-transfer sequence to the phantom
clock.
PHANTOM CLOCK REGISTER INFORMATION
The phantom clock information is contained in eight registers of 8 bits, each of which is sequentially
accessed one bit at a time after the 64-bit pattern-recognition sequence has been completed. When
updating the phantom clock registers, each register must be handled in groups of 8 bits. Writing and
reading individual bits within a register could produce erroneous results. These read/write registers are
defined in Figure 3.
Figure 2. Phantom Clock Protocol Definition
NOTE: THE PATTERN RECOGNITION IN HEX IS C5, 3A, A3, 5C, C5, 3A, A3, 5C. THE ODDS OF THIS PATTERN BEING
ACCIDENTALLY DUPLICATED AND CAUSING INADVERTENT ENTRY TO THE PHANTOM CLOCK IS LESS THAN 1 IN 1019. THIS
PATTERN IS SENT TO THE PHANTOM CLOCK LSB TO MSB.
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DS1254
Figure 3. Phantom Clock Register Definition
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DS1254
AM/PM/12/24 MODE
Bit 7 of the hours register is defined as the 12-hour or 24-hour mode select bit. When high, the 12-hour
mode is selected. In the 12-hour mode, bit 5 is the AM/PM bit with logic high being PM. In the 24-hour
mode, bit 5 is the second 10-hour bit (20–23 hours).
OSCILLATOR BIT
Bit 5 of the day register controls the oscillator. When set to logic 1, the oscillator is off. When set to logic
0, the oscillator turns on and the watch becomes operational.
ZERO BITS
Registers 1, 2, 3, 4, 5, and 6 contain one or more bits that will always read logic 0. When writing these
locations, either a logic 1 or logic 0 is acceptable.
BATTERY MONITORING
The DS1254 automatically monitors the battery in an attached DS3800 battery cap on a 24-hour time
interval. Such monitoring begins within tREC after VCC rises above VPF and is suspended when power
failure occurs.
After each 24-hour period has elapsed, the battery is connected to an internal 1MW test resistor for one
second. During this one second, if the battery voltage falls below the battery-voltage trip point (~2.6V),
the battery warning output BW is asserted. Once asserted, BW remains active until the attached DS3800
battery cap is replaced. However, the battery is still retested after each VCC power-up, even if it was
active on power-down. If the battery voltage is found to be higher than ~2.6V during such testing, BW is
de-asserted and regular testing resumes. BW has an open-drain output driver.
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DS1254
ABSOLUTE MAXIMUM RATINGS
Voltage Range on Any Pin Relative to Ground
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
-0.3V to +6.0V
0°C to +70°C
-40°C to +70°C
See IPC/JEDEC J-STD-020A
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only,
and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is
not implied. Exposure to the absolute maximum rating conditions for extended periods may affect device.
RECOMMENDED DC OPERATING CONDITIONS
(TA = 0°C to +70°C)
PARAMETER
Power-Supply Voltage
(5V Operation)
Power-Supply Voltage
(3.3V Operation)
Logic 1 Voltage (All Inputs)
Logic 0 Voltage (All Inputs)
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
VCC
4.5
5.0
5.5
V
1
VCC
3.0
3.3
3.7
V
1
V
1
V
1
VIH
VIL
CONDITIONS
VCC = 5V ±10%
2.2
VCC = 3.3V ±10%
2.0
VCC = 5V ±10%
-0.3
VCC +
0.3
VCC +
0.3
0.8
VCC = 3.3V ±10%
-0.3
0.6
DC ELECTRICAL CHARACTERISTICS
(VCC = 5.0V ±10%, TA = 0°C to +70°C.)
PARAMETER
Input Leakage Current
I/O Leakage Current
Output Current at 2.4V
Output Current at 0.4V
Standby Current (CE = 2.2V)
Standby Current (CE = VCC - 0.5V)
Operating Current, tCYC = 100ns
Write Protection Voltage
SYMBOL
MIN
IIL
IIO
IOH
IOL
-4.0
-4.0
-1.0
2.0
ICCS1
ICCS2
ICCO1
VPF
TYP
5.0
3.0
4.25
MAX
UNITS
NOTES
+4.0
+4.0
10
5.0
85
4.50
mA
mA
mA
mA
mA
mA
mA
V
1
MAX
UNITS
NOTES
+4.0
+4.0
mA
mA
mA
mA
mA
mA
mA
V
3
3
DC ELECTRICAL CHARACTERISTICS
(VCC = 3.3V ±10%, TA = 0°C to +70°C.)
PARAMETER
Input Leakage Current
I/O Leakage Current
Output Current at 2.4V
Output Current at 0.4V
Standby Current (CE = 2.2V)
Standby Current (CE = VCC - 0.5V)
Operating Current, tCYC = 100ns
Write Protection Voltage
SYMBOL
MIN
IIL
IIO
IOH
IOL
-4.0
-4.0
-1.0
2.0
ICCS1
ICCS2
ICCO1
VPF
TYP
5.0
2.0
2.8
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7
3.0
50
2.97
3
3
1
DS1254
CAPACITANCE
(TA = +25°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
Input Capacitance: A0 to A18, OE,
WE, CE
CIN
25
50
pF
Input Capacitance: A19 to A20
CIN
5
10
pF
I/O Capacitance: DQ0 to DQ7
CIO
25
50
pF
COUT
5
10
pF
Output Capacitance: BW
NOTES
AC ELECTRICAL CHARACTERISTICS
°
°
(VCC = 5.0V ±10%, TA = 0 C to +70 C.)
PARAMETER
Read Cycle Time
Address Access Time
OE to Output Valid
CE to Output Valid
CE or OE to Output Active
Output High-Z from Deselection
Output Hold from Address Change
Write Cycle Time
WE, CE Pulse Width
Address Setup Time
Address Hold Time
Output High-Z from WE
Output Active from WE
Data Setup Time
Data Hold Time
Read Recovery (Clock Access Only)
Write Recovery (Clock Access Only)
SYMBOL
MIN
tRC
tAAC
tOE
tCO
tCOE
tOD
tOH
tWC
tWP
tAW
tAH1
tAH2
tODW
tOEW
tDS
tDH1
tDH2
tRR
tWR
100
MAX
100
55
100
0
35
5
100
70
0
5
25
35
5
40
0
20
20
20
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UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
2
2
5
6
7
2
2
8
6
8
DS1254
AC ELECTRICAL CHARACTERISTICS
(VCC = 3.3V ±10%, TA = 0°C to +70°C)
PARAMETER
Read Cycle Time
Address Access Time
OE to Output Valid
CE to Output Valid
CE or OE to Output Active
Output High-Z from Deselection
Output Hold from Address Change
Write Cycle Time
WE, CE Pulse Width
Address Setup Time
Address Hold Time
Output High-Z from WE
Output Active from WE
Data Setup Time
Data Hold Time
Read Recovery (Clock Access Only)
Write Recovery (Clock Access Only)
SYMBOL
MIN
tRC
tAAC
tOE
tCO
tCOE
tOD
tOH
tWC
tWP
tAW
tAH1
tAH2
tODW
tOEW
tDS
tDH1
tDH2
tRR
tWR
150
MAX
150
75
150
0
70
5
150
100
0
5
25
70
5
60
0
20
20
20
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UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
2
2
5
6
7
2
2
8
6
8
DS1254
Figure 4. Memory Read Cycle Timing (Note 9)
tRC
ADDRESS
tOH
tACC
tCO
CE
tOD
tOE
OE
tCOE
tCOE
tOD
OUTPUT
DATA VALID
DQ0–DQ7
Figure 5. Memory Write Cycle Timing, Write-Enable Controlled (Notes 5, 6, 8, 10, 11, 12,
and 13)
tWC
ADDRESS
tAW
CE
tAH1
WE
tWP
tODW
tOEW
tDS
DQ0–DQ7
DATA IN
STABLE
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tDH1
DS1254
Figure 6. Memory Write Cycle Timing, Chip-Enable Controlled (Notes 5, 7, 8, 10, 11, 12,
and 13)
tWC
ADDRESS
tAW
tAH2
tWP
CE
WE
tODW
tCOE
tDH2
tDS
DQ0–DQ7
DATA IN
STABLE
Figure 7. Read Cycle to Phantom Clock
tRC
WE = VIH
tRR
tCO
CE
tOD
tOE
OE
tCOE
DQ0
tCOE
tOD
OUTPUT
DATA VALID
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DS1254
Figure 8. Write Cycle to Phantom Clock
tWC
OE = VIH
tWR
tWP
WE
TAH2
tWP
CE
tDH2
tDS
tDH1
DATA IN
STABLE
DQ0
Figure 9. Power-Up/Power-Down Waveform Timing (Note 14)
VCC
VPF(max)
VPF(min)
VBAT
tPD
tF
tFB
tREC
tDR
SLEWS WITH VCC
CE
tR
,
WE
SLEWS WITH VCC
tBPU
BW
POWER-UP/POWER-DOWN CHARACTERISTICS
(VCC = 5V ±10%)
PARAMETER
CE and WE at VIH Before Power-Down
VCC Fall Time: VPF(MAX) to VPF(MIN)
VCC Fall Time: VPF(MIN) to VBAT
VCC Rise Time: 0V to VPF(MIN)
VCC Valid to End of Write Protection
VCC Valid to BW Valid
SYMBOL
MIN
tPD
tF
tFB
tR
tREC
tBPU
0
300
10
150
SYMBOL
MIN
tDR
10
TYP
MAX
UNITS
NOTES
125
1
ms
ms
ms
ms
ms
s
3
MAX
UNITS
NOTES
years
4
(TA = +25°C)
PARAMETER
Expected Data-Retention Time (Oscillator On)
TYP
WARNING: UNDER NO CIRCUMSTANCES ARE NEGATIVE UNDERSHOOTS, OF ANY AMPLITUDE, ALLOWED WHEN DEVICE IS IN
BATTERY-BACKUP MODE.
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DS1254
Figure 10. Battery Warning Detection (Note 3)
VCC
tBPU
VBAT
2.6V
tBTC
tBTPW
BATTERY TEST
ACTIVE
tBW
BW
BATTERY WARNING TIMING
(VCC = 5.0V ±10%, TA = 0°C to +70°C)
PARAMETER
Battery Test Cycle
Battery Test Pulse Width
Battery Test to BW Active
VCC Valid to BW Valid
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
1
1
1
hour
seconds
seconds
seconds
3
24
tBTC
tBTPW
tBW
tBPU
AC TEST CONDITIONS
Output Load:
100pF + 1 TTL Gate
Input Pulse Levels:
0V to 3.0V
Timing Measurement Reference Levels:
Input: 1.5V
Output: 1.5V
Input Pulse Rise and Fall Times: 5ns
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DS1254
NOTES:
1) Voltage referenced to ground.
2) These parameters are sampled with a 50pF load and are not 100% tested.
3) BW is an open-drain output and, as such, cannot source current. An external pullup resistor should be
connected to this pin for proper operation. BW can sink 10mA.
4) The DS3800 battery cap is a one-time use part, but can be removed and replaced. By design, DS3800
removal will mechanically damage the battery cap, which eliminates the accidental use of a
previously attached and possibly low-capacity battery cap.
5) tWP specified as the logical AND of CE and WE , tWP is measured from the latter of CE or WE going
low to the earlier of CE or WE going high.
6) tAH1, tDH1 are measured from WE going high.
7) tAH2, tDH2 are measured from CE going high.
8) tDS is measured from the earlier of CE or WE going high.
9) WE is high for a read cycle.
10) OE = VIH or VIL. If OE = VIH during write cycle, the output buffers remain in a high-impedance state.
11) If the CE low transition occurs simultaneously with or later than the WE low transition in a writeenable-controlled write cycle, the output buffers remain in a high-impedance state during this period.
12) If the CE high transition occurs prior to or simultaneously with the WE high transition, the output
buffers remain in a high-impedance state during this period.
13) If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition,
the output buffers remain in a high-impedance state during this period.
14) In a power-down condition, the voltage on any pin cannot exceed the voltage on VCC.
14 of 17
DS1254
PACKAGE INFORMATION
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package
outline information, go to www.maxim-ic.com/DallasPackInfo.)
PKG
A
B
C
D
E
F
G
H
I
K
15 of 17
IN
MM
IN
MM
IN
MM
IN
MM
IN
MM
IN
MM
IN
MM
IN
MM
IN
MM
IN
MM
MIN
MAX
1.570
39.88
1.570
39.88
0.033
0.84
1.497
38.02
0.047
1.19
0.033
0.84
0.047
1.19
0.234
5.94
0.160
4.00
0.025
0.64
1.580
40.13
1.580
40.13
0.043
1.09
1.503
38.18
0.053
1.35
0.043
1.09
0.053
1.35
0.240
6.10
0.200
5.10
0.032
0.82
DS1254
PACKAGE INFORMATION (continued)
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package
outline information, go to www.maxim-ic.com/DallasPackInfo.)
DS1254 with Attached DS3800 Battery Cap
PKG
A IN
MM
B IN
MM
C IN
MM
16 of 17
MIN
MAX
1.656
42.06
1.656
42.06
—
—
1.668
42.37
1.668
42.37
0.485
12.32
DS1254
PACKAGE INFORMATION (continued)
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package
outline information, go to www.maxim-ic.com/DallasPackInfo.)
Recommended Land Pattern (with Overlaid Package Outline)
The DS1254 BGA is a subset of the industry-standard 40mm BGA format, with all balls on a 50-mil grid.
Corner balls have been removed to provide space for the electrical and mechanical interface features that
facilitate attachment of the DS3800 battery cap.
NOTE
0.250
0.500
0.150
NOTE: GROUND SHIELD TO ISOLATE RTC XTAL FROM EMI.
Maxim/Dallas Semiconductor cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim/Dallas Semiconductor product.
No circuit patent licenses are implied. Maxim/Dallas Semiconductor reserves the right to change the circuitry and specifications without notice at any time.
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600
© 2003 Maxim Integrated Products · Printed USA
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