Infineon IPU06N03LB Optimosâ®2 power-transistor Datasheet

IPU06N03LB
OptiMOS®2 Power-Transistor
IPS06N03LB
Product Summary
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
V DS
30
V
R DS(on),max
5.8
mΩ
ID
50
A
• N-channel - Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
PG-TO251-3-11
• Superior thermal resistance
PG-TO251-3
• 175 °C operating temperature
• dv /dt rated
• Pb-free lead plating; RoHS compliant
Type
Package
Marking
IPU06N03LB
PG-TO251-3
06N03LB
IPS06N03LB
PG-TO251-3-11
06N03LB
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C2)
50
T C=100 °C
50
Pulsed drain current
I D,pulse
T C=25 °C3)
200
Avalanche energy, single pulse
E AS
I D=50 A, R GS=25 Ω
210
Reverse diode dv /dt
dv /dt
I D=50 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
6
Gate source voltage4)
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
T C=25 °C
IEC climatic category; DIN IEC 68-1
1)
Rev. 0.2
Unit
A
mJ
kV/µs
±20
V
94
W
-55 ... 175
°C
55/175/56
J-STD20 and JESD22
page 1
2006-05-10
IPU06N03LB
Parameter
IPS06N03LB
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
1.6
minimal footprint
-
-
62
6 cm2 cooling area5)
-
-
40
30
-
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
SMD version, device on PCB
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=40 µA
1.2
1.6
2
Zero gate voltage drain current
I DSS
V DS=30 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=30 V, V GS=0 V,
T j=125 °C
-
10
100
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
R DS(on)
V GS=4.5 V, I D=50 A
-
7.3
9.1
mΩ
V GS=10 V, I D=50 A
-
4.9
5.8
-
1.2
-
Ω
41
83
-
S
Gate-source leakage current
Gate resistance
RG
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=50 A
2)
Current is limited by bondwire; with an R thJC=1.6 K/W the chip is able to carry 95 A.
3)
See figure 3
4)
T j,max=150 °C and duty cycle D <0.25 for V GS<-5 V
V
µA
5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 0.2
page 2
2006-05-10
IPU06N03LB
Parameter
IPS06N03LB
Values
Symbol Conditions
Unit
min.
typ.
max.
-
2400
3200
-
860
1150
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
110
170
Turn-on delay time
t d(on)
-
7
10
Rise time
tr
-
6
9
Turn-off delay time
t d(off)
-
27
40
Fall time
tf
-
4.2
6.3
Gate to source charge
Q gs
-
7.4
9.9
Gate charge at threshold
Q g(th)
-
3.9
5.1
Gate to drain charge
Q gd
-
4.9
7.3
Switching charge
Q sw
-
8.4
12
Gate charge total
Qg
-
19
25
Gate plateau voltage
V plateau
-
3.1
-
Gate charge total, sync. FET
Q g(sync)
V DS=0.1 V,
V GS=0 to 5 V
-
16
22
Output charge
Q oss
V DD=15 V, V GS=0 V
-
19
26
-
-
50
-
-
200
V GS=0 V, V DS=15 V,
f =1 MHz
V DD=15 V, V GS=10 V,
I D=25 A, R G=2.7 Ω
pF
ns
Gate Charge Characteristics 6)
V DD=15 V, I D=25 A,
V GS=0 to 5 V
nC
V
nC
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=50 A,
T j=25 °C
-
0.92
1.2
V
Reverse recovery charge
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
-
-
10
nC
6)
Rev. 0.2
T C=25 °C
A
See figure 16 for gate charge parameter definition
page 3
2006-05-10
IPU06N03LB
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
100
IPS06N03LB
60
90
50
80
70
40
I D [A]
P tot [W]
60
50
30
40
20
30
20
10
10
0
0
0
50
100
150
200
0
50
100
T C [°C]
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
1000
10
limited by on-state
resistance
1 µs
1
0.5
10 µs
100
0.2
Z thJC [K/W]
I D [A]
100 µs
DC
1 ms
0.1
0.1
0.05
0.02
0.01
single pulse
10 ms
10
0.01
1
0.001
0.1
1
10
100
-5
10
0
100-4
10-30
10-20
10-1 0
100 1
t p [s]
V DS [V]
Rev. 0.2
-6
010
page 4
2006-05-10
IPU06N03LB
IPS06N03LB
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
25
150
10 V
4.5 V
3V
3.2 V
3.8 V
3.5 V
4.1 V
130
20
4.1 V
110
R DS(on) [mΩ]
90
I D [A]
3.8 V
70
50
3.5 V
30
3.2 V
15
10
4.5 V
10 V
5
3V
10
2.8 V
0
-10 0
1
2
3
0
20
40
V DS [V]
60
80
100
120
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
100
120
90
100
80
70
80
g fs [S]
I D [A]
60
50
60
40
40
30
20
20
175 °C
10
25 °C
0
0
0
1
2
3
4
5
Rev. 0.2
0
20
40
60
80
I D [A]
V GS [V]
page 5
2006-05-10
IPU06N03LB
IPS06N03LB
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=50 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
12
2.5
11
10
2
9
400 µA
7
98 %
1.5
V GS(th) [V]
R DS(on) [mΩ]
8
6
typ
5
40 µA
1
4
3
0.5
2
1
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. Capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
10000
1000
Ciss
Coss
1000
25 °C
100
175 °C
I F [A]
C [pF]
175°C 98%
Crss
100
10
25°C 98%
10
1
0
5
10
15
20
25
30
V DS [V]
Rev. 0.2
0.0
0.5
1.0
1.5
2.0
V SD [V]
page 6
2006-05-10
IPU06N03LB
IPS06N03LB
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=25 A pulsed
parameter: Tj(start)
parameter: V DD
100
12
15 V
10
25 °C
5V
150 °C
100 °C
20 V
V GS [V]
I AV [A]
8
10
6
4
2
1
0
1
10
100
1000
0
10
20
30
40
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
38
V GS
36
Qg
34
V BR(DSS) [V]
32
30
28
V g s(th)
26
24
Q g(th)
22
Q sw
Q gs
20
-60
-20
20
60
100
140
Q g ate
Q gd
180
T j [°C]
Rev. 0.2
page 7
2006-05-10
IPU06N03LB
IPS06N03LB
PG-TO251-3: Outline
Packaging:
Rev. 0.2
page 8
2006-05-10
IPU06N03LB
IPS06N03LB
PG-TO251-3-11: Outline
Packaging:
Rev. 0.2
page 9
2006-05-10
IPU06N03LB
IPS06N03LB
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support device or system, or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain
and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or
other persons may be endangered.
Rev. 0.2
page 10
2006-05-10
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