ON MMBFJ310LT1G Jfet - vhf/uhf amplifier transistor Datasheet

MMBFJ309LT1G,
MMBFJ310LT1G
JFET - VHF/UHF Amplifier
Transistor
N−Channel
http://onsemi.com
Features
2 SOURCE
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
3
GATE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain−Source Voltage
VDS
25
Vdc
Gate−Source Voltage
VGS
25
Vdc
IG
10
mAdc
Gate Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
1 DRAIN
3
1
Symbol
Max
Unit
225
1.8
mW
mW/°C
RqJA
556
°C/W
TJ, Tstg
−55 to +150
°C
PD
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2
SOT−23 (TO−236)
CASE 318
STYLE 10
MARKING DIAGRAM
6x M G
G
1
6x
= Device Code
x = U for MMBFJ309LT1
x = T for MMBFJ310LT1
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBFJ309LT1G
SOT−23 3,000 / Tape & Reel
(Pb−Free)
MMBFJ310LT1G
SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 4
1
Publication Order Number:
MMBFJ309LT1/D
MMBFJ309LT1G, MMBFJ310LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)GSS
−25
−
−
Vdc
IGSS
−
−
−
−
−1.0
−1.0
nAdc
mAdc
MMBFJ309
MMBFJ310
VGS(off)
−1.0
−2.0
−
−
−4.0
−6.5
Vdc
MMBFJ309
MMBFJ310
IDSS
12
24
−
−
30
60
mAdc
VGS(f)
−
−
1.0
Vdc
Forward Transfer Admittance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
|Yfs|
8.0
−
18
mmhos
Output Admittance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
|yos|
−
−
250
mmhos
Input Capacitance
(VGS = −10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)
Ciss
−
−
5.0
pF
Reverse Transfer Capacitance
(VGS = −10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)
Crss
−
−
2.5
pF
Equivalent Short−Circuit Input Noise Voltage
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz)
en
−
10
−
nVń ǸHz
Characteristic
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage
(IG = −1.0 mAdc, VDS = 0)
Gate Reverse Current (VGS = −15 Vdc)
Gate Reverse Current (VGS = −15 Vdc, TA = 125°C)
Gate Source Cutoff Voltage
(VDS = 10 Vdc, ID = 1.0 nAdc)
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current
(VDS = 10 Vdc, VGS = 0)
Gate−Source Forward Voltage
(IG = 1.0 mAdc, VDS = 0)
SMALL−SIGNAL CHARACTERISTICS
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2
MMBFJ309LT1G, MMBFJ310LT1G
60
I D , DRAIN CURRENT (mA)
60
VDS = 10 V
TA = -55°C
50
50
+25°C
IDSS
+25°C
40
40
30
30
+150°C
20
20
+25°C
-55°C
10
10
+150°C
-5.0
-1.0
-4.0
-3.0
-2.0
ID - VGS, GATE-SOURCE VOLTAGE (VOLTS)
IDSS - VGS, GATE-SOURCE CUTOFF VOLTAGE (VOLTS)
0
IDSS, SATURATION DRAIN CURRENT (mA)
70
70
0
10
1.0 k
Yfs
Yfs
10 k
100
1.0 k
Yos
VGS(off) = -2.3 V =
VGS(off) = -5.7 V =
10
120
RDS
96
7.0
72
Cgs
4.0
48
24
Cgd
1.0
100
0.01
1.0
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
0
10
9.0
ID, DRAIN CURRENT (mA)
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 2. Common−Source Output
Admittance and Forward Transconductance
versus Drain Current
Figure 3. On Resistance and Junction
Capacitance versus Gate−Source Voltage
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3
0
0
R DS , ON RESISTANCE (OHMS)
100 k
Yos, OUTPUT ADMITTANCE (μ mhos)
CAPACITANCE (pF)
Yfs , FORWARD TRANSCONDUCTANCE (μmhos)
Figure 1. Drain Current and Transfer
Characteristics versus Gate−Source Voltage
MMBFJ309LT1G, MMBFJ310LT1G
24
|S12|, |S22|
3.0
0.060 1.00
2.4
0.79 0.39
S22
VDS = 10 V
ID = 10 mA
TA = 25°C
0.048 0.98
S21
Y11
18
1.8
Y21
12
1.2
0.73 0.33
VDS = 10 V
ID = 10 mA
TA = 25°C
0.67 0.27
0.024 0.94
0.61 0.21
0.6
0.012 0.92
S12
Y12
0
100
200
300
500
f, FREQUENCY (MHz)
700
0.55 0.15
100
1000
Figure 4. Common−Gate Y Parameter
Magnitude versus Frequency
q21, q11
180° 50°
40°
160°
30°
150°
20°
140°
10°
200
300
500
f, FREQUENCY (MHz)
q11, q12
-20° 120°
-40°
1000
86°
-40° 100°
85°
-60°
80°
-120° 84°
-80°
60°
-100°
40°
-120°
20°
100
0
q11
q21
q22
-20°
-60°
-80°
-40°
-100°
q12
q11
130°
0°
100
-140°
VDS = 10 V
ID = 10 mA
TA = 25°C
200
300
500
f, FREQUENCY (MHz)
q21
-60°
q12
-160° 83°
-180°
700
0.90
q21, q22
-20°
q21
700
Figure 5. Common−Gate S Parameter
Magnitude versus Frequency
q12, q22
-20° 87°
q22
170°
0.036 0.96
S11
Y22
6.0
Y12 (mmhos)
|Y11|, |Y21 |, |Y22 | (mmhos)
30
|S21|, |S11|
0.85 0.45
-200° 82°
1000
Figure 6. Common−Gate Y Parameter
Phase−Angle versus Frequency
VDS = 10 V
ID = 10 mA
TA = 25°C
200
300
500
f, FREQUENCY (MHz)
q11
700
-80°
-100°
1000
Figure 7. S Parameter Phase−Angle
versus Frequency
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4
MMBFJ309LT1G, MMBFJ310LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
e
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
q
A
L
A1
L1
VIEW C
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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5
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MMBFJ309LT1/D
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