FMBA0656 Package: SuperSOT-6 Device Marking: .003 C2 E1 C1 Note: The " . " (dot) signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT- 6 Surface Mount Package This device was designed for general purpose amplifier applications at collector currents to 300mA. Sourced from Process 33 (NPN) and Process 73 (PNP). Absolute Maximum Ratings TA = 25°C unless otherwise noted Value Units Collector-Emitter Voltage 80 V VCBO Collector-Base Voltage 80 V VEBO Emitter-Base Voltage 4 V IC Collector Current (continuous) 500 mA PD Power Dissipation @Ta = 25°C* 0.7 W TSTG Storage Temperature Range -55 to +150 °C TJ Junction Temperature 150 °C RθJA Thermal Resistance, Junction to Ambient 180 °C/W Symbol Parameter VCEO *Pd total, for both transistors. For each transistor, Pd = 350mW. Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions BVCEO Collector to Emitter Voltage Ic = 1.0 mA 80 V BVCBO Collector to Base Voltage Ic = 100 uA 80 V BVEBO Emitter to Base Voltage Ie = 100 uA 4 V 1997 Fairchild Semiconductor Corporation Page 1 of 2 Min Max Units fmba0656.lwpPr33&73(Y3) FMBA0656 Discrete Power & Signal Technologies (continued) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Max Units ICBO Collector Cutoff Current Vcb = 80 V Min 100 nA ICEO Collector Cutoff Current Vce = 60 V 100 nA hFE DC Current Gain Vce = 1 V, Ic = 10 mA Vce = 1 V, Ic = 100 mA VCE(sat) Collector-Emitter Saturation Voltage Ic = 100 mA, Ib = 10 mA 0.25 V VBE(on) Base-Emitter On Voltage 1.2 V 100 100 Ic = 100 mA, Vce = 1 V - Small - Signal Characteristics fT Current Gain - Bandwidth Product 1997 Fairchild Semiconductor Corporation Vce = 1 V, Ic = 100 mA, f = 100 MHz Page 2 of 2 50 - fmba0656.lwpPr33&73(Y3) FMBA0656 NPN & PNP Complementary Dual Transistor