Rohm DTA115TSA Digital transistors (built-in resistor) Datasheet

DTA115TH / DTA115TE / DTA115TUA /
DTA115TKA / DTA115TSA
Transistors
Digital transistors (built-in resistor)
DTA115TH / DTA115TE / DTA115TUA /
DTA115TKA / DTA115TSA
!External dimensions (Units : mm)
DTA115TH
1.6
0~0.1
0.7
0.12
(1)Emitter
(2)Base
(3)Collector
!Circuit schematic
1.6
(2)
0.2
(3)
1.0
(1)
0.5 0.5
DTA115TE
0.2
ROHM : EMT3H
EIAJ : SC-89
0.8
0.1Min.
0.7
0~0.1
0.55
0.15
1.6
C
B
1.0
(2)
(3)
1.6
(1)
0.5 0.5
0.27
0.85
0.3
!Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors.
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input,
and parasitic effects are almost completely eliminated.
3) Only the on / off conditions need to be set for
operation, making device design easy.
4) Higher mounting densities can be achieved.
(1)Emitter
(2)Base
(3)Collector
ROHM : EMT3
EIAJ : SC-75A
R1
2.0
(1)
(2)
(3)
0.3
E : Emitter
C : Collector
B : Base
1.3
DTA115TUA
0.65 0.65
E
1.25
2.1
0.9
0~0.1
0.7
0.15
0.2
Each lead has same dimensions
0.1~0.4
(1)Emitter
(2)Base
(3)Collector
ROHM : UMT3
EIAJ : SC-70
(2)
0.95 0.95
1.9
2.9
(3)
0.4
(1)
DTA115TKA
1.6
2.8
1.1
0~0.1
0.8
0.15
Each lead has same dimensions
0.3~0.6
(1)Emitter
(2)Base
(3)Collector
ROHM : SMT3
EIAJ : SC-59
DTA115TSA
2
(15Min.)
3Min.
3
4
0.45
Taping specifications
2.5
0.5 0.45
5
(1)(2)(3)
ROHM : SPT
EIAJ : SC-72
(1)Emitter
(2)Collector
(3)Base
DTA115TH / DTA115TE / DTA115TUA /
DTA115TKA / DTA115TSA
Transistors
!Absolute maximum ratings (Ta = 25°C)
Symbol
Limits
Unit
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−100
mA
DTA115TH / DTA115TE
Collector power
DTA115TUA / DTA115TKA
dissipation
DTA115TSA
PC
Parameter
150
mW
200
300
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 ~ +150
°C
!Package, marking, and packaging specifications
Part No.
DTA115TH
DTA115TE DTA115TUA DTA115TKA DTA115TSA
SPT
Package
EMT3H
EMT3
UMT3
SMT3
Marking
99
99
99
99
−
Packaging code
T2L
TL
T106
T146
TP
Basic ordering unit (pieces)
8000
3000
3000
3000
5000
!Electrical characteristics (Ta = 25°C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
BVCBO
−50
−
−
V
IC=−50µA
Collector-emitter breakdown voltage
BVCEO
−50
−
−
BVEBO
−5
−
−
V
V
IC=−1mA
Emitter-base breakdown voltage
Collector cutoff current
ICBO
−
−
−0.5
µA
VCB=−50V
Emitter cutoff current
IEBO
−
−
−0.5
µA
VEB=−4V
IC/IB=−1mA/−0.1mA
Parameter
VCE(sat)
−
−
−0.3
hFE
100
250
600
V
−
Input resistance
R1
100
130
kΩ
Transition frequency
fT
70
−
250
−
MHZ
Collector-emitter saturation voltage
DC current transfer ratio
∗Transition frequency of the device.
Conditions
IE=−50µA
IC=−1mA , VCE=−5V
−
VCE=−10V , IE=5mA , f=100MHZ
∗
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