Si7501DN Vishay Siliconix Complementary 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) P-Channel −30 N Channel N-Channel 30 rDS(on) (W) ID (A) 0.051 @ VGS = −10 V −6.4 0.075 @ VGS = −6 V −5.3 0.035 @ VGS = 10 V 7.7 0.050 @ VGS = 4.5 V 6.5 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile APPLICATIONS D Backlight Inverter D DC/DC Converter − 4-Cell Battery S1 PowerPAK 1212-8 S1 3.30 mm 1 2 G1 3.30 mm G1 3 S2 4 D G2 D 8 7 D 6 G2 D 5 D Bottom View S2 Ordering Information: Si7501DN-T1—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) P-Channel Parameter Symbol 10 secs N-Channel Steady State 10 secs Steady State Drain-Source Voltage VDS −30 30 Gate-Source Voltage VGS "25 "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a TA = 25_C −4.5 7.7 5.4 −5.1 −3.6 4.7 4.3 Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range −25 IS V −6.4 IDM A 25 −2.6 −1.3 2.6 1.3 3.1 1.6 3.1 1.6 3 1.0 2 1.0 PD Unit TJ, Tstg W −55 to 150 _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Case) Symbol t v 10 sec Steady State Steady State RthJA RthJC Typical Maximum 32 40 65 81 5 6.3 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72173 S-32419—Rev. B, 24-Nov-03 www.vishay.com 1 Si7501DN Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage Gate Body Leakage Gate-Body Zero Gate Voltage Drain Current On State Drain Currenta On-State Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) D( ) rDS(on) DS( ) gfs f VSD VDS = VGS, ID = −250 mA P-Ch −1.0 −3 VDS = VGS, ID = 250 mA N-Ch 1.0 3 VDS = 0 V, VGS = "25 V P-Ch "200 VDS = 0 V, VGS = "20 V N-Ch "100 VDS = −30 V, VGS = 0 V P-Ch −1 VDS = 30 V, VGS = 0 V N-Ch 1 VDS = −30 V, VGS = 0 V, TJ = 55_C P-Ch −5 VDS = 30 V, VGS = 0 V, TJ = 55_C N-Ch VDS w −5 V, VGS = −10 V P-Ch −25 VDS p 5 V, VGS = 10 V N-Ch 25 V nA mA 5 A VGS = −10 V, ID = −6.4 A P-Ch 0.041 0.051 VGS = 10 V, ID = 7.7 A N-Ch 0.028 0.035 VGS = −6 V, ID = −5.3 A P-Ch 0.055 0.075 VGS = 4.5 V, ID = 6.5 A N-Ch 0.040 0.050 VDS = −15 V, ID = −6.4 A P-Ch 13 VDS = 15 V, ID = 7.7 A N-Ch 15 IS = −1.7 A, VGS = 0 V P-Ch −0.80 −1.2 IS = 1.7 A, VGS = 0 V N-Ch 0.80 1.2 P-Ch 12.5 19 N-Ch 9 14 P-Ch 2.5 N-Ch 2 W S V Dynamicb Total Gate Charge Qg Gate Source Charge Gate-Source Qgs Gate Drain Charge Gate-Drain Qgdd Gate Resistance Rg Turn On Delay Time Turn-On Rise Time Turn Off Delay Time Turn-Off Fall Time Source-Drain Reverse Recovery Time P-Channel VDS = −15 V, VGS = −10 V, ID = −6.4 A N-Channel VDS = 15 V, V VGS = 10 V V, ID = 7.7 77A td(on) d( ) tr P-Channel VDD = −15 V, RL = 5 W ID ^ −3 A, VGEN = −10 V, RG = 1 W td(off) d( ff) N-Channel VDD = 15 V V, RL = 5 W ID ^ 3 A, VGEN = 10 V, RG = 1 W 3.6 1.3 P-Ch 9 N-Ch 3 P-Ch 10 15 N-Ch 10 15 P-Ch 20 30 N-Ch 15 25 P-Ch 25 40 N-Ch 20 30 W P-Ch 30 45 N-Ch 10 15 IF = −1.7 A, di/dt = 100 A/ms P-Ch 25 50 IF = 1.7 A, di/dt = 100 A/ms N-Ch 20 40 tf trr P-Ch N-Ch nC ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 72173 S-32419—Rev. B, 24-Nov-03 Si7501DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P−CHANNEL Output Characteristics Transfer Characteristics 25 25 VGS = 10 thru 6 V 25_C 20 I D − Drain Current (A) 20 I D − Drain Current (A) TC = −55_C 5V 15 10 4V 5 15 125_C 10 5 3V 0 0 0 1 2 3 4 5 0 1 VDS − Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 3 4 5 6 Capacitance 1000 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.16 2 VGS − Gate-to-Source Voltage (V) 0.12 0.08 VGS = 6 V VGS = 10 V 0.04 800 Ciss 600 400 Coss 200 Crss 0.00 0 0 5 10 15 20 25 0 6 ID − Drain Current (A) 18 24 30 VDS − Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 10 1.6 VDS = 15 V ID = 6.4 A r DS(on) − On-Resistance (W) (Normalized) V GS − Gate-to-Source Voltage (V) 12 8 6 4 2 VGS = 10 V ID = 6.4 A 1.4 1.2 1.0 0.8 0 0 3 6 9 Qg − Total Gate Charge (nC) Document Number: 72173 S-32419—Rev. B, 24-Nov-03 12 15 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) www.vishay.com 3 Si7501DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P−CHANNEL Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.16 30 r DS(on) − On-Resistance ( W ) I S − Source Current (A) TJ = 150_C 10 TJ = 25_C 1 0.0 0.12 ID = 6.4 A 0.08 0.04 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 2 VSD − Source-to-Drain Voltage (V) 4 Threshold Voltage 8 10 Single Pulse Power 0.6 50 0.4 40 ID = 250 mA 0.2 30 Power (W) V GS(th) Variance (V) 6 VGS − Gate-to-Source Voltage (V) 0.0 20 −0.2 −0.4 −50 10 −25 0 25 50 75 100 125 0 10−3 150 10−2 TJ − Temperature (_C) 1 10 100 600 Time (sec) 100 Safe Operating Area rDS(on) Limited IDM Limited P(t) = 0.0001 10 I D − Drain Current (A) 10−1 P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 0.1 P(t) = 1 P(t) = 10 TA = 25_C Single Pulse BVDSS Limited dc 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) www.vishay.com 4 Document Number: 72173 S-32419—Rev. B, 24-Nov-03 Si7501DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P−CHANNEL Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 65_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10−4 Document Number: 72173 S-32419—Rev. B, 24-Nov-03 10−3 10−2 Square Wave Pulse Duration (sec) 10−1 1 www.vishay.com 5 Si7501DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL Output Characteristics Transfer Characteristics 30 30 VGS = 10 thru 5 V 25 I D − Drain Current (A) I D − Drain Current (A) 25 20 4V 15 10 5 20 15 10 TC = 125_C 5 25_C 3V 0 0 1 2 3 4 5 0 1 VDS − Drain-to-Source Voltage (V) C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.06 VGS = 4.5 V VGS = 10 V 4 5 6 25 30 Capacitance Ciss 600 400 200 0.02 Coss Crss 0.00 0 0 5 10 15 20 25 0 30 5 ID − Drain Current (A) 10 15 20 VDS − Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 10 1.6 VDS = 15 V ID = 7.7 A r DS(on) − On-Resistance (W) (Normalized) V GS − Gate-to-Source Voltage (V) 3 800 0.08 0.04 2 VGS − Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.10 8 6 4 2 VGS = 10 V ID = 7.7 A 1.4 1.2 1.0 0.8 0 0 2 4 6 Qg − Total Gate Charge (nC) www.vishay.com 6 −55_C 0 8 10 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Document Number: 72173 S-32419—Rev. B, 24-Nov-03 Si7501DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.16 TJ = 150_C r DS(on) − On-Resistance ( W ) I S − Source Current (A) 30 10 TJ = 25_C 1 0.0 0.12 0.08 ID = 7.7 A 0.04 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 2 VSD − Source-to-Drain Voltage (V) 4 Threshold Voltage 8 10 Single Pulse Power 0.4 50 0.2 40 ID = 250 mA −0.0 30 Power (W) V GS(th) Variance (V) 6 VGS − Gate-to-Source Voltage (V) −0.2 20 −0.4 10 −0.6 −0.8 −50 −25 0 25 50 75 100 125 0 10−3 150 10−2 TJ − Temperature (_C) 1 10 100 600 Time (sec) 100 Safe Operating Area rDS(on) Limited IDM Limited P(t) = 0.0001 10 I D − Drain Current (A) 10−1 P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 0.1 P(t) = 1 P(t) = 10 TA = 25_C Single Pulse BVDSS Limited dc 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Document Number: 72173 S-32419—Rev. B, 24-Nov-03 www.vishay.com 7 Si7501DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA =65_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10−4 www.vishay.com 8 10−3 10−2 Square Wave Pulse Duration (sec) 10−1 1 Document Number: 72173 S-32419—Rev. B, 24-Nov-03