AP40P03GH/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
-30V
RDS(ON)
28mΩ
ID
G
▼ RoHS Compliant
BVDSS
-30A
S
Description
G D
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP40P03GJ) is available for low-profile applications.
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
-30
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
-18
A
1
IDM
Pulsed Drain Current
-120
A
PD@TC=25℃
Total Power Dissipation
31.3
W
Linear Derating Factor
0.25
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
4
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data and specifications subject to change without notice
201109063-1/4
AP40P03GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-30
-
-
V
-
-0.02
-
V/℃
VGS=-10V, ID=-18A
-
-
28
mΩ
VGS=-4.5V, ID=-10A
-
-
50
mΩ
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-18A
-
20
-
S
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS= ±20V
-
-
±100
nA
ID=-18A
-
14
22
nC
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance
o
IGSS
2
VGS=0V, ID=-250uA
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-24V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
9
-
nC
VDS=-15V
-
12
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-18A
-
56
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
30
-
ns
tf
Fall Time
RD=0.8Ω
-
57
-
ns
Ciss
Input Capacitance
VGS=0V
-
915
1465
pF
Coss
Output Capacitance
VDS=-25V
-
280
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
195
-
pF
Min.
Typ.
IS=-18A, VGS=0V
-
-
-1.2
V
IS=-18A, VGS=0V,
-
30
-
ns
dI/dt=-100A/µs
-
21
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4
AP40P03GH/J
100
120
-10V
-10V
T A = 25 o C
-7.0V
80
60
-5.0V
-4.5V
40
-7.0V
80
-ID , Drain Current (A)
-ID , Drain Current (A)
100
TA=150oC
60
-5.0V
40
-4.5V
20
20
V G = -3.0 V
V G = -3.0 V
0
0
0
2
4
6
8
0
2
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
6
8
Fig 2. Typical Output Characteristics
1.6
50
I D = -10 A
T C =25 ℃
I D =-1 8 A
V G =-10V
1.4
40
Normalized RDS(ON)
RDS(ON) (mΩ )
4
-V DS , Drain-to-Source Voltage (V)
30
1.2
1.0
0.8
0.6
20
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.5
18
15
Normalized -VGS(th) (V)
2.0
-IS(A)
12
o
o
T j =150 C
9
T j =25 C
6
1.5
1.0
0.5
3
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP40P03GH/J
f=1.0MHz
10000
V DS =- 24 V
I D =-1 8 A
10
8
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
1000
C iss
4
C oss
C rss
2
100
0
0
5
10
15
20
25
1
30
5
9
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
1000.0
100.0
100us
-ID (A)
13
-V DS , Drain-to-Source Voltage (V)
1ms
10.0
10ms
100ms
1s
DC
T c =25 o C
Single Pulse
1.0
0.1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4