Central CJD127 Complementary silicon power darlington transistor Datasheet

CJD122 NPN
CJD127 PNP
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTOR
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD122,
CJD127 types are Complementary Silicon Power
Darlington Transistors manufactured in a surface
mount package designed for low speed switching
and amplifier applications.
MARKING CODE: FULL PART NUMBER
DPAK TRANSISTOR CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Collector Current
ICM
Base Current
IB
Power Dissipation
PD
Power Dissipation (TA=25°C)
PD
Operating and Storage
Junction Temperature
TJ,Tstg
Thermal Resistance
ΘJC
Thermal Resistance
ΘJA
100
100
5.0
8.0
16
120
20
1.75
UNITS
V
V
V
A
A
mA
W
W
-65 to +150
6.25
71.4
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICEO
VCE=50V
ICEV
VCE=100V, VBE(off)=1.5V
ICEV
VCE=100V, VBE(off)=1.5V, TC=125oC
ICBO
VCB=100V
IEBO
VEB=5.0V
BVCEO
IC=30mA
100
VCE(SAT)
IC=4.0A, IB=16mA
VCE(SAT)
IC=8.0A, IB=80mA
VBE(SAT)
IC=8.0A, IB=80mA
VBE(ON)
VCE=4.0V, IC=4.0A
hFE
VCE=4.0V, IC=4.0A
1000
hFE
VCE=4.0V, IC=8.0A
100
fT
VCE=4.0V, IC=3.0A, f=1.0MHz
4.0
Cob
VCB=10V, IE=0, f=1.0MHz (CJD122)
Cob
VCB=10V, IE=0, f=1.0MHz (CJD127)
hfe
VCE=4.0V, IC=3.0A, f=1.0kHz
MAX
10
10
500
10
2.0
2.0
4.0
4.5
2.8
12000
200
300
300
UNITS
µA
µA
µA
µA
mA
V
V
V
V
V
MHz
pF
pF
R1 (26-September 2002)
Central
TM
Semiconductor Corp.
CJD122 NPN
CJD127 PNP
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTOR
DPAK TRANSISTOR CASE - MECHANICAL OUTLINE
LEAD CODE:
B) BASE
C) COLLECTOR
E) EMITTER
C) COLLECTOR
MARKING CODE:
FULL PART NUMBER
R1 (26-September 2002)
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