MJD112 Rev.E May.-2016 描述 / DATA SHEET Descriptions TO-252 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-252 Plastic Package. 特征 / Features 直流电流增益高，E 与 C 间内置阻尼二极管电性能与 TIP112 等同。 High DC current gain, built-in a damper diode at E-C,electrically similar to popular TIP112. 用途 / Applications 用于中功率放大或开关电路。 Medium power switching applications. 内部等效电路 引脚排列 / Equivalent Circuit / Pinning 4 1 2 3 PIN1：Base 放大及印章代码 PIN 2,4：Collector PIN 3：Emitter / hFE Classifications & Marking 见印章说明。See Marking Instructions. http://www.fsbrec.com 1/6 MJD112 Rev.E May.-2016 极限参数 / DATA SHEET Absolute Maximum Ratings(Ta=25℃) 参数 Parameter 符号 Symbol Collector to Base Voltage VCBO 数值 Rating 100 Collector to Emitter Voltage VCEO 100 V Emitter to Base Voltage VEBO 5.0 V IC 2.0 A IC(Pulse) 4.0 A Base Current - Continuous IB 50 mA Collector Power Dissipation PC 1.75 W Collector Power Dissipation PC(TC=25℃) 20 W Tj 150 ℃ Tstg -55～150 ℃ Collector Current - Continuous Collector Current – Continuous(Pulse) Junction Temperature Storage Temperature Range 单位 Unit V Pulse Test:PW≤300μs,Duty Cycle≤2% 电性能参数 / Electrical Characteristics(Ta=25℃) 参数 Parameter Collector to Emitter Breakdown Voltage* 符号 Symbol 测试条件 Test Conditions 最小值 典型值 最大值 单位 Min Typ Max Unit VCEO* IC=30mA IB=0 Collector Cut-Off Current ICEO VCE=50V IB=0 0.02 mA Collector Cut-Off Current ICBO VCB=100V IE=0 0.02 mA Emitter Cut-Off Current IEBO VEB=5.0V IC=0 2.0 mA hFE(1)* VCE=3.0V IC=2.0A 1000 hFE(2)* VCE=3.0V IC=0.5A 500 hFE(3)* VCE=3.0V IC=4.0A 200 DC Current Gain 100 V 12K Collector-Emitter Saturation Voltage VCE(sat)1* IC=2.0A IB=8.0mA 2.0 V VCE(sat)2* IC=4.0A IB=40mA 3.0 V Base-Emitter Saturation Voltage* VBE(sat)* IC=4.0A IB=40mA 4.0 V Base-Emitter-On Voltage* VBE(on)* VCE=3.0V IC=2.0A 2.8 V fT VCE=10V IC=0.75A Cob VCB=10V f=0.1MHz IE=0 Current Gain Bandwidth Product Output Capacitance *Pulse Test:Pulse Width≤380us,Duty Cycle≤2%. http://www.fsbrec.com 25 MHz 100 pF *脉冲测试：脉宽≤380us,占空比≤2%。 2/6 MJD112 Rev.E May.-2016 电参数曲线图 DATA SHEET / Electrical Characteristic Curve http://www.fsbrec.com 3/6 MJD112 Rev.E May.-2016 外形尺寸图 DATA SHEET / Package Dimensions http://www.fsbrec.com 4/6 MJD112 Rev.E May.-2016 印章说明 / DATA SHEET Marking Instructions BR MJD112 **** 说明： BR： 为公司代码 MJD112： 为产品型号 ****： 为生产批号代码，随生产批号变化。 Company Code Note: BR: MJD112: ****: http://www.fsbrec.com Product Type. Lot No. Code, code change with Lot No. 5/6 MJD112 Rev.E May.-2016 DATA SHEET 回流焊温度曲线图(无铅) / Temperature Profile for IR Reflow Soldering(Pb-Free) 说明： Note: 1、预热温度 25～150℃，时间 60～90sec; 1.Preheating:25~150℃, Time:60~90sec. 2、峰值温度 245±5℃，时间持续为 5±0.5sec; 2.Peak Temp.:245±5℃, Duration:5±0.5sec. 3、焊接制程冷却速度为 2～10℃/sec. 3. Cooling Speed: 2~10℃/sec. 耐焊接热试验条件 / Resistance to Soldering Heat Test Conditions 温度：260±5℃ 包装规格 Package Type 封装形式 TO-252 套管包装 Package Type 封装形式 使用说明 Temp.:260±5℃ Time:10±1 sec / Packaging SPEC. 卷盘包装 TO-251/252 时间：10±1 sec. / REEL Units 包装数量 Dimension Units/Reel 只/卷盘 Reels/Inner Box 卷盘/盒 Units/Inner Box 只/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 2,500 2 5,000 5 25,000 包装尺寸 3 (unit：mm ) Reel Inner Box 盒 Outer Box 箱 13〞×16 360×360×50 385×257×392 / TUBE Units 包装数量 Dimension 包装尺寸 3 (unit：mm ) Units/Tube 只/套管 Tubes/Inner Box 套管/盒 Units/Inner Box 只/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Tube 套管 Inner Box 盒 Outer Box 箱 75 48 3,600 5 18,000 526×20.5×5.25 555×164×50 575×290×180 / Notices http://www.fsbrec.com 6/6