MMBT5551 MMBT5551 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2015-05-15 Type Code 1 1.3±0.1 3 2.4 ±0.2 0.4 Power dissipation – Verlustleistung +0.1 1.1 -0.2 2.9 ±0.1 +0.1 -0.05 2 1.9±0.1 Dimensions - Maße [mm] 1=B 2=E 3=C 250 mW Plastic case Kunststoffgehäuse SOT-23 (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) MMBT5551 Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open VCEO 160 V Collector-Base-voltage – Kollektor-Basis-Spannung E open VCBO 180 V Emitter-Base-voltage – Emitter-Basis-Spannung C open VEBO 6V Power dissipation – Verlustleistung Ptot 250 mW 1) Collector current – Kollektorstrom (dc) IC 600 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. 2 DC current gain – Kollektor-Basis-Stromverhältnis ) IC = 1 mA, VCE = 5 V MMBT5550 MMBT5551 hFE hFE 60 80 – – – – IC = 10 mA, VCE = 5 V MMBT5550 MMBT5551 hFE hFE 60 80 – – 250 250 IC = 50 mA, VCE = 5 V MMBT5550 MMBT5551 hFE hFE 20 30 – – – – Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2) 1 2 IC = 10 mA, IB = 1 mA MMBT5550 MMBT5551 VCEsat VCEsat – – – – 0.15 V 0.15 V IC = 50 mA, IB = 5 mA MMBT5550 MMBT5551 VCEsat VCEsat – – – – 0.25 V 0.20 V Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 MMBT5551 Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2) IC = 10 mA, IB = 1 mA MMBT5551 VBEsat – – 1.0 V IC = 50 mA, IB = 5 mA MMBT5551 VBEsat – – 1.0 V Collector-Base cutoff current – Kollektor-Basis-Reststrom VCB = 120 V, (E open) MMBT5551 ICBO – – 50 nA VCB = 120 V, Tj = 100°C, (E open) MMBT5551 ICBO – – 50 µA IEBO – – 50 nA fT 100 MHz – 300 MHz CCBO – – 6 pF CEBO – – 30 pf F – – 8 dB Emitter-Base cutoff current – Emitter-Basis-Reststrom VEB = 4 V, (C open) Gain-Bandwidth Product – Transitfrequenz IC = 10 mA, VCE = 10 V, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure – Rauschzahl VCE = 5 V, IC = 200 µA, RG = 2 kΩ, f = 30 Hz ... 15 kHz MMBT5551 Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren Marking - Stempelung 2 1 2 RthA < 420 K/W 1) MMBT5401 MMBT5551 = G1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG