STMicroelectronics M28LV64-300MS1 64k 8k x 8 low voltage parallel eeprom with software data protection Datasheet

M28LV64
64K (8K x 8) LOW VOLTAGE PARALLEL EEPROM
with SOFTWARE DATA PROTECTION
NOT FOR NEW DESIGN
FAST ACCESS TIME: 200ns
SINGLE LOW VOLTAGE OPERATION
LOW POWER CONSUMPTION
FAST WRITE CYCLE:
– 64 Bytes Page Write Operation
– Byte or Page Write Cycle: 3ms Max
ENHANCED END OF WRITE DETECTION:
– Ready/Busy Open Drain Output
(only on the M28LV64)
– Data Polling
– Toggle Bit
PAGE LOAD TIMER STATUS BIT
HIGH RELIABILITY SINGLE POLYSILICON,
CMOS TECHNOLOGY:
– Endurance >100,000 Erase/Write Cycles
– Data Retention >40 Years
JEDEC APPROVED BYTEWIDE PIN OUT
SOFTWARE DATA PROTECTION
The M28LV64 is replaced by the
M28C64-xxW
28
1
PDIP28 (P)
PLCC32 (K)
28
1
SO28 (MS)
300 mils
TSOP28 (N)
8 x13.4mm
Figure 1. Logic Diagram
DESCRIPTION
The M28LV64 is an 8K x 8 low power Parallel
EEPROM fabricated with SGS-THOMSON proprietary single polysilicon CMOS technology. The
device offers fast access time with low power dissipation and requires a 2.7V to 3.6V power supply.
VCC
13
8
A0-A12
Table 1. Signal Names
A0 - A12
Address Input
DQ0 - DQ7
Data Input / Output
W
Write Enable
E
Chip Enable
G
Output Enable
RB
Ready / Busy
VCC
Supply Voltage
VSS
Ground
W
DQ0-DQ7
M28LV64
E
RB *
G
VSS
AI01538B
Note: * RB function is only available on the M28LV64.
May 1997
This is information on a product still in production bu t not recommended for new de signs.
1/18
M28LV64
VCC
W
NC
A8
A9
A11
G
A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
RB
DU
VCC
W
NC
1
28
2
27
3
26
4
25
5
24
6
23
7
22
M28LV64
8
21
9
20
10
19
11
18
12
17
13
16
14
15
A7
A12
RB
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
Figure 2B. LCC Pin Connections
1 32
A6
A5
A4
A3
A2
A1
A0
NC
DQ0
9
M28LV64
25
A8
A9
A11
NC
G
A10
E
DQ7
DQ6
17
DQ1
DQ2
VSS
DU
DQ3
DQ4
DQ5
Figure 2A. DIP Pin Connections
AI01539B
AI01540B
Warning: NC = Not Connected.
Warning: NC = Not Connected, DU = Don’t Use.
Figure 2C. SO Pin Connections
Figure 2D. TSOP Pin Connections
RB
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
1
2
3
4
5
6
7
M28LV64
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
W
NC
A8
A9
A11
G
A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
G
A11
A9
A8
NC
W
VCC
RB
A12
A7
A6
A5
A4
A3
22
28
1
21
M28LV64
7
AI01541B
Warning: NC = Not Connected.
2/18
15
14
8
AI01542B
Warning: NC = Not Connected.
A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
VSS
DQ2
DQ1
DQ0
A0
A1
A2
M28LV64
Table 2. Absolute Maximum Ratings
Symbol
(1)
Parameter
Value
Unit
Ambient Operating Temperature
– 40 to 85
°C
TSTG
Storage Temperature Range
– 65 to 150
°C
VCC
Supply Voltage
– 0.3 to 6.5
V
VIO
Input/Output Voltage
– 0.3 to VCC +0.6
V
VI
Input Voltage
– 0.3 to 6.5
V
4000
V
TA
VESD
Electrostatic Discharge Voltage (Human Body model)
(2)
Notes: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability. Refer also to the SGS-THOMSON SURE Program and other
relevant quality documents.
2. 100pF through 1500Ω; MIL-STD-883C, 3015.7
Figure 3. Block Diagram
RB
A6-A12
(Page Address)
A0-A5
RESET
ADDRESS
LATCH
X DECODE
VPP GEN
E
G
W
CONTROL LOGIC
64K ARRAY
ADDRESS
LATCH
Y DECODE
SENSE AND DATA LATCH
I/O BUFFERS
PAGE LOAD
TIMER STATUS
TOGGLE BIT
DATA POLLING
DQ0-DQ7
AI01355
3/18
M28LV64
Table 3. Operating Modes
(1)
Mode
E
G
W
DQ0 - DQ7
Standby
1
X
X
Hi-Z
Output Disable
X
1
X
Hi-Z
Write Disable
X
X
1
Hi-Z
Read
0
0
1
Data Out
Write
0
1
0
Data In
Note: 1. 0 = VIL; 1 = VIH; X = VIL or VIH.
DESCRIPTION (cont’d)
The M28LV64 outputs the Ready/Busy write
status, the M28LV64-aaaX(aaa = access time) has
no Ready/Busy status and the relevant RB pin is
Not Connected (NC). The circuit has been designed to offer a flexible microcontroller interface
featuring both hardware and software handshaking with Ready/Busy, Data Polling and Toggle Bit.
The M28LV64 supports 64 byte page write operation. A Software Data Protection (SDP) is also
possible using the standard JEDEC algorithm.
PIN DESCRIPTION
Addresses (A0-A12). The address inputs select
an 8-bit memory location during a read or write
operation.
Chip Enable (E). The chip enable input must be
low to enable all read/write operations. When Chip
Enable is high, power consumption is reduced.
Output Enable (G). The Output Enable input controls the data output buffers and is used to initiate
read operations.
Data In/ Out (DQ0 - DQ7). Data is written to or read
from the M28LV64 through the I/O pins.
Write Enable (W). The Write Enable input controls
the writing of data to the M28LV64.
Ready/Busy (RB). Ready/Busy is an open drain
output that can be used to detect the end of the
internal write cycle (this function applies only to the
M28LV64).
4/18
OPERATION
In order to prevent data corruption and inadvertent
writeoperationsan internal VCC comparator inhibits
Write operation if VCC is below VWI (see Table 6).
Access to the memory in write mode is allowed after
a power-up as specified in Table 6.
Read
The M28LV64 is accessed like a static RAM. When
E and G are low with W high, the data addressed
is presented on the I/O pins. The I/O pins are high
impedance when either G or E is high.
Write
Write operations are initiated when both W and E
are low and G is high.The M28LV64 supports both
E and W controlled write cycles. The Address is
latched by the falling edge of E or W which ever
occurs last and the Data on the rising edge of E or
W which ever occurs first. Once initiated the write
operation is internally timed until completion.
Page Write
Page write allows up to 64 bytes to be consecutively latched into the memory prior to initiating a
programming cycle. All bytes must be located in a
single page address, that is A6-A12 must be the
same for all bytes. The page write can be initiated
during any byte write operation.
Following the first byte write instruction the host
may send another address and data with a minimum data transfer rate of tWHWH (see Figure 13).
If a transition of E or W is not detected within tWHWH
the internal programming cycle will start.
M28LV64
Microcontroller Control Interface
The M28LV64 provides two write operation status
bits and one status pin that can be used to minimize
the system write cycle. These signals are available
on the I/O port bits DQ7 or DQ6 of the memory
during programming cycle only, or as the RB signal
on a separate pin.
Figure 4. Status Bit Assignment
DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0
DP
TB
PLTS Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
DP = Data Polling
TB = Toggle Bit
PLTS = Page Load Timer Status
Data Polling bit (DQ7). During the internal write
cycle, any attempt to read the last byte written will
produce on DQ7 the complementary value of the
previously latched bit. Once the write cycle is finished the true logic value appears on DQ7 in the
read cycle.
Toggle bit (DQ6). The M28LV64 offers another
way for determining when the internal write cycle
is completed. During the internal Erase/Write cycle,
DQ6 will toggle from ”0” to ”1” and ”1” to ”0” (the
first read value is ”0”) on subsequent attempts to
read the memory. When the internal cycle is completed the toggling will stop and the device will be
accessible for a new Read or Write operation.
Page Load Timer Status bit (DQ5). In the Page
Write mode data may be latched by E or W up to
100µs after the previous byte. Up to 64 bytes may
be input. The Data output (DQ5) indicates the
status of the internal Page Load Timer. DQ5 may
be read by asserting Output Enable Low (tPLTS).
DQ5 Low indicates the timer is running, High indicates time-out after which the write cycle will start
and no new data may be input.
Re ady/ Busy p in (av ail ab le only on the
M28LV64). The RB pin provides a signal at its open
drain output which is low during the erase/write
cycle, but which is released at the completionof the
programming cycle.
Software Data Protection
The M28LV64 offers a software controlled write
protection facility that allows the user to inhibit all
write modes to the device including the Chip Erase
instruction. This can be useful in protecting the
memory from inadvertent write cycles that may
occur due to uncontrolled bus conditions.
The M28LV64is shipped as standard in the ”unprotected” state meaning that the memory contents
can be changed as required by the user. After the
Software Data Protection enable algorithm is issued, the device enters the ”Protect Mode” of
operation where no further write commands have
any effect on the memory contents. The device
remains in this mode until a valid Software Data
Protection (SDP) disable sequence is received
whereby the device reverts to its ”unprotected”
state. The Software Data Protection is fully nonvolatile and is not changed by power on/off sequences.
To enable the Software Data Protection (SDP) the
device requires the user to write (with a Page Write)
three specific data bytes to three specific memory
locations as per Figure 5. Similarly to disable the
Software Data Protection the user has to write
specific data bytes into six different locations as per
Figure 6 (with a Page Write). This complex series
ensures that the user will never enable or disable
the Software Data Protection accidentally.
5/18
M28LV64
Figure 5. Software Data Protection Enable Algorithm and Memory Write
WRITE AAh in
Address 1555h
Page
Write
Instruction
(Note 1)
WRITE 55h in
Address 0AAAh
WRITE AAh in
Address 1555h
Page
Write
Instruction
(Note 1)
WRITE 55h in
Address 0AAAh
WRITE A0h in
Address 1555h
WRITE A0h in
Address 1555h
WRITE
is enabled
SDP is set
Write Page
(1 up to 64 bytes)
SDP ENABLE ALGORITHM
WRITE IN MEMORY
WHEN SDP IS SET
AI01356B
Note: 1. MSB Address bits (A6 to A12) differ during these specific Page Write operations.
Figure 6. Software Data Protection Disable Algorithm
WRITE AAh in
Address 1555h
WRITE 55h in
Address 0AAAh
Page
Write
Instruction
WRITE 80h in
Address 1555h
WRITE AAh in
Address 1555h
WRITE 55h in
Address 0AAAh
WRITE 20h in
Address 1555h
Unprotected State
AI01357
6/18
M28LV64
AC MEASUREMENT CONDITIONS
Figure 8. AC Testing Equivalent Load Circuit
Input Rise and Fall Times
≤ 20ns
Input Pulse Voltages
0V to VCC -0.3V
Input and Output Timing Ref. Voltages
1.5V
VCC
Note that Output Hi-Z is defined as the point where data
is no longer driven.
1.8kΩ
DEVICE
UNDER
TEST
Figure 7. AC Testing Input Output Waveforms
OUT
1.3kΩ
CL = 100pF
VCC –0.3V
0.5 VCC
0V
CL includes JIG capacitance
AI01274
AI01396
Table 4. Capacitance (1) (TA = 25 °C, f = 1 MHz )
Symbol
C IN
Parameter
Test Condition
Input Capacitance
Output Capacitance
C OUT
Min
Max
Unit
VIN = 0V
6
pF
VOUT = 0V
12
pF
Note: 1. Sampled only, not 100% tested.
Table 5. Read Mode DC Characteristics
(TA = 0 to 70°C or –40 to 85°C; VCC = 2.7V to 3.6V)
Symbol
Parameter
Test Condition
Min
Max
Unit
ILI
Input Leakage Current
0V ≤ VIN ≤ VCC
1019
µA
ILO
Output Leakage Current
0V ≤ VIN ≤ VCC
10
µA
E = VIL, G = VIL, f = 5 MHz, VCC = 3.3V
8
mA
E = VIL, G = VIL, f = 5 MHz, VCC = 3.6V
10
mA
E > VCC –0.3V
20
µA
ICC (1)
ICC2 (1)
Supply Current
(CMOS inputs)
Supply Current (Standby)
CMOS
VIL
Input Low Voltage
– 0.3
0.6
V
VIH
Input High Voltage
2
VCC +0.5
V
VOL
Output Low Voltage
IOL = 1 mA
0.2 VCC
V
VOH
Output High Voltage
IOH = 1 mA
0.8 VCC
V
Note: 1. All I/O’s open circuit.
Table 6. Power Up Timing (1) (TA = 0 to 70°C or –40 to 85°C; VCC = 2.7V to 3.6V)
Symbol
Parameter
Min
Max
Unit
tPUR
Time Delay to Read Operation
1
µs
tPUW
Time Delay to Write Operation (once VCC ≥ 4.5V)
15
ms
VWI
Write Inhibit Threshold
1.5
2.5
V
Note: 1. Sampled only, not 100% tested.
7/18
M28LV64
Table 7. Read Mode AC Characteristics
(TA = 0 to 70°C or –40 to 85°C; VCC = 2.7V to 3.6V)
M28LV64
Symbol
Alt
Parameter
Test Condition
-200
min
tAVQV
tACC
Address Valid to Output
Valid
tELQV
tCE
tGLQV
max
-250
min
-300
max
min
Unit
max
E = VIL, G = VIL
200
250
300
ns
Chip Enable Low to Output
Valid
G = VIL
200
250
300
ns
tOE
Output Enable Low to
Output Valid
E = VIL
100
150
150
ns
(1,2 )
tDF
Chip Enable High to
Output Hi-Z
G = VIL
0
55
0
60
0
60
ns
tGHQZ (1,2)
tDF
Output Enable High to
Output Hi-Z
E = VIL
0
55
0
60
0
60
ns
tAXQX (2)
tOH
Address Transition to
Output Transition
E = VIL, G = VIL
0
tEHQZ
0
0
ns
Notes: 1. Output Hi-Z is defined as the point at which data is no longer driven.
2. Guaranted, not 100% sampled.
Figure 9. Read Mode AC Waveforms
A0-A12
VALID
tAVQV
tAXQX
E
tGLQV
tEHQZ
G
tELQV
DQ0-DQ7
tGHQZ
DATA OUT
Hi-Z
AI00749B
Note: Wri te Enable (W) = High
8/18
M28LV64
Table 8. Write Mode AC Characteristics
(TA = 0 to 70°C or –40 to 85°C; VCC = 2.7V to 3.6V)
Symbol
Alt
tAVWL
tAS
tAVEL
Parameter
Test Condition
Min
Max
Unit
Address Valid to Write Enable Low
E = VIL, G = VIH
0
ns
tAS
Address Valid to Chip Enable Low
G = VIH , W = VIL
0
ns
tELWL
tCES
Chip Enable Low to Write Enable Low
G = VIH
0
ns
tGHWL
tOES
Output Enable High to Write Enable
Low
E = VIL
0
ns
tGHEL
tOES
Output Enable High to Chip Enable Low
W = VIL
0
ns
tWLEL
tWES
Write Enable Low to Chip Enable Low
G = VIH
0
ns
tWLAX
tAH
Write Enable Low to Address Transition
100
ns
tELAX
tAH
Chip Enable Low to Address Transition
100
ns
tWLDV
tDV
Write Enable Low to Input Valid
E = VIL, G = VIH
1
µs
tELDV
tDV
Chip Enable Low to Input Valid
G = VIH , W = VIL
1
µs
tELEH
tWP
Chip Enable Low to Chip Enable High
100
1000
ns
tWHEH
tCEH
Write Enable High to Chip Enable High
0
ns
tWHGL
tOEH
Write Enable High to Output Enable
Low
0
ns
tEHGL
tOEH
Chip Enable High to Output Enable Low
0
ns
tEHWH
tWEH
Chip Enable High to Write Enable High
0
ns
tWHDX
tDH
Write Enable High to Input Transition
0
ns
tEHDX
tDH
Chip Enable High to Input Transition
0
ns
tWHWL
tWPH
Write Enable High to Write Enable Low
50
ns
tWLWH
tWP
Write Enable Low to Write Enable High
100
ns
tWHWH
tBLC
Byte Load Repeat Cycle Time
0.2
tWHRH
tWC
Write Cycle Time
tWHRL
tDB
Write Enable High to Ready/Busy Low
tEHRL
tDB
Chip Enable High to Ready/Busy Low
tDVWH
tDS
Data Valid before Write Enable High
50
ns
tDVEH
tDS
Data Valid before Chip Enable High
50
ns
100
µs
3
ms
Note 1
150
ns
Note 1
150
ns
Note: 1. With a 3.3 kΩ external pull-up resistor.
9/18
M28LV64
Figure 10. Write Mode AC Waveforms - Write Enable Controlled
A0-A12
VALID
tAVWL
tWLAX
E
tWHEH
tELWL
G
tGHWL
tWLWH
tWHGL
W
tWLDV
tWHWL
DATA IN
DQ0-DQ7
tDVWH
tWHDX
RB
tWHRL
AI00750
Figure 11. Write Mode AC Waveforms - Chip Enable Controlled
A0-A12
VALID
tAVEL
tELAX
E
tGHEL
tELEH
G
tWLEL
tEHGL
W
tELDV
DQ0-DQ7
tEHWH
DATA IN
tDVEH
tEHDX
RB
tEHRL
AI00751
10/18
M28LV64
Figure 12. Page Write Mode AC Waveforms - Write Enable Controlled
A0-A12
Addr 0
Addr 1
Addr 2
Addr n
E
tPLTS
G
tWHWL
tWHRH
W
tWLWH
tWHWH
Byte 0
DQ0-DQ7
Byte 1
tWHWH
Byte 2
Byte n
DQ5
Byte n
tWHRL
RB
AI00752C
Figure 13. Software Protected Write Cycle Waveforms
G
E
tWLWH
tWHWL
tWHWH
W
tWLAX
tAVEL
A0-A5
Byte Address
tWHDX
A6-A12
1555h
0AAAh
1555h
Page Address
tDVWH
DQ0-DQ7
AAh
55h
A0h
Byte 0
Byte 62
Byte 63
AI01358
Note: A6 through A12 must specify the same page address during each high to low transition of W (or E) after the software code has been
entered. G must be high only when W and E are both low.
11/18
M28LV64
Figure 14. Data Polling Waveform Sequence
A0-A12
Address of the last byte of the Page Write instruction
E
G
W
DQ7
DQ7
DQ7
LAST WRITE
DQ7
DQ7
INTERNAL WRITE SEQUENCE
DQ7
READY
AI00753C
Figure 15. Toggle Bit Waveform Sequence
A0-A12
E
G
W
DQ6
(1)
LAST WRITE
TOGGLE
INTERNAL WRITE SEQUENCE
READY
AI00754D
Note: 1. First Toggle bit is forced to ’0’
12/18
M28LV64
ORDERING INFORMATION SCHEME
Example:
Speed
-200 200ns
-250 250ns
-300 300ns
M28LV64 -200
X
K
1
Write Monitoring
blank RB function
active
X
No RB function
Package
Temperature Range
P
PDIP28
1
0 to 70 °C
K
PLCC32
6
–40 to 85 °C
MS
N
SO28 300 mils
TSOP28
8 x 13.4mm
The M2864 is replaced by the M28C64-xxW.
Devices are shipped from the factory with the memory content set at all ”1’s” (FFh).
For a list of available options (Speed, Package, etc...) or for further information on any aspect of this device,
please contact the SGS-THOMSON Sales Office nearest to you.
13/18
M28LV64
PDIP28 - 28 pin Plastic DIP, 600 mils width
mm
Symb
Typ
inches
Min
Max
A
3.94
A1
Min
Max
5.08
0.155
0.200
0.38
1.78
0.015
0.070
A2
3.56
4.06
0.140
0.160
B
0.38
0.56
0.015
0.021
B1
1.14
1.78
0.045
0.070
C
0.20
0.30
0.008
0.012
D
34.70
37.34
1.366
1.470
E
14.80
16.26
0.583
0.640
E1
12.50
13.97
0.492
0.550
–
–
–
–
eA
15.20
17.78
0.598
0.700
L
3.05
3.82
0.120
0.150
S
1.02
2.29
0.040
0.090
α
0°
15°
0°
15°
N
28
e1
2.54
Typ
0.100
28
PDIP28
A2
A1
B1
B
A
L
α
e1
eA
C
D
S
N
E1
E
1
PDIP
Drawing is not to scale.
14/18
M28LV64
PLCC32 - 32 lead Plastic Leaded Chip Carrier, rectangular
mm
Symb
Typ
inches
Min
Max
A
2.54
A1
Typ
Min
Max
3.56
0.100
0.140
1.52
2.41
0.060
0.095
B
0.33
0.53
0.013
0.021
B1
0.66
0.81
0.026
0.032
D
12.32
12.57
0.485
0.495
D1
11.35
11.56
0.447
0.455
D2
9.91
10.92
0.390
0.430
E
14.86
15.11
0.585
0.595
E1
13.89
14.10
0.547
0.555
E2
12.45
13.46
0.490
0.530
e
1.27
–
–
0.050
–
–
j
0.89
–
–
0.035
–
–
N
32
32
Nd
7
7
Ne
9
9
CP
0.10
0.004
PLCC32
D
D1
A1
j
1 N
B1
E1 E
Ne
e
D2/E2
B
A
Nd
PLCC
CP
Drawing is not to scale.
15/18
M28LV64
SO28 - 28 lead Plastic Small Outline, 300 mils body width
mm
Symb
Typ
inches
Min
Max
A
2.46
A1
Min
Max
2.64
0.097
0.104
0.13
0.29
0.005
0.011
A2
2.29
2.39
0.090
0.094
B
0.35
0.48
0.014
0.019
C
0.23
0.32
0.009
0.013
D
17.81
18.06
0.701
0.711
E
7.42
7.59
0.292
0.299
–
–
–
–
H
10.16
10.41
0.400
0.410
L
0.61
1.02
0.024
0.040
α
0°
8°
0°
8°
N
28
e
1.27
CP
Typ
0.050
28
0.10
0.004
SO28
A2
A
C
B
CP
e
D
N
E
H
1
A1
SO-b
Drawing is not to scale.
16/18
α
L
M28LV64
TSOP28 - 28 lead Plastic Thin Small Outline, 8 x 13.4mm
mm
Symb
Typ
inches
Min
Max
Typ
Min
Max
A
1.25
0.049
A1
0.20
0.008
A2
0.95
1.15
0.037
0.045
B
0.17
0.27
0.007
0.011
C
0.10
0.21
0.004
0.008
D
13.20
13.60
0.520
0.535
D1
11.70
11.90
0.461
0.469
E
7.90
8.10
0.311
0.319
–
–
–
–
L
0.50
0.70
0.020
0.028
α
0°
5°
0°
5°
N
28
e
0.55
0.022
28
CP
0.10
0.004
TSOP28
A2
22
21
e
28
1
E
B
7
8
D1
A
CP
D
DIE
C
TSOP-c
A1
α
L
Drawing is not to scale.
17/18
M28LV64
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
 1997 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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18/18
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