ON NJW21193G Silicon power transistor Datasheet

NJW21193G (PNP)
NJW21194G (NPN)
Silicon Power Transistors
The NJW21193G and NJW21194G utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
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Features
•
•
•
•
•
16 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
250 VOLTS, 200 WATTS
Total Harmonic Distortion Characterized
High DC Current Gain
Excellent Gain Linearity
High SOA
These Devices are Pb−Free and are RoHS Compliant
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
250
Vdc
Collector−Base Voltage
VCBO
400
Vdc
Emitter−Base Voltage
VEBO
5.0
Vdc
Collector−Emitter Voltage − 1.5 V
VCEX
400
Vdc
IC
16
Adc
ICM
30
Adc
Base Current − Continuous
IB
5.0
Adc
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
PD
200
1.6
W
W/°C
TJ, Tstg
− 65 to
+150
°C
Collector Current − Continuous
Collector Current − Peak (Note 1)
Operating and Storage Junction
Temperature Range
COLLECTOR 2, 4
1
BASE
EMITTER 3
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Case
RqJC
0.625
°C/W
Thermal Resistance,
Junction−to−Ambient
RqJA
40
°C/W
EMITTER 3
MARKING
DIAGRAM
4
TO−3P
CASE 340AB
STYLES 1,2,3
1
THERMAL CHARACTERISTICS
COLLECTOR 2, 4
1
BASE
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
Characteristic
NPN
PNP
MAXIMUM RATINGS
2
NJW2119xG
AYWW
3
x
G
A
Y
WW
1
= 3 or 4
= Pb−Free Package
= Assembly Location
= Year
= Work Week
2
3
ORDERING INFORMATION
Device
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 1
1
Package
Shipping
NJW21193G
TO−3P
(Pb−Free)
30 Units/Rail
NJW21194G
TO−3P
(Pb−Free)
30 Units/Rail
Publication Order Number:
NJW21193/D
NJW21193G (PNP) NJW21194G (NPN)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
VCEO(sus)
250
−
−
Vdc
Collector Cutoff Current
(VCE = 200 Vdc, IB = 0)
ICEO
−
−
100
mAdc
Emitter Cutoff Current
(VCE = 5 Vdc, IC = 0)
IEBO
−
−
100
mAdc
Collector Cutoff Current
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
ICEX
−
−
100
mAdc
4.0
2.25
−
−
−
−
20
8
−
−
80
−
−
−
2.2
−
−
−
−
1.4
4
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non−repetitive)
(VCE = 80 Vdc, t = 1 s (non−repetitive)
IS/b
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)
hFE
Base−Emitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)
VBE(on)
Collector−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS
(Matched pair hFE = 50 @ 5 A/5 V)
THD
hFE
unmatched
hFE
matched
−
0.8
−
−
0.08
−
fT
4
−
−
MHz
Cob
−
−
500
pF
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
%
NPN NJW21194G
f,
T CURRENT GAIN BANDWIDTH PRODUCT (MHz)
f,
T CURRENT GAIN BANDWIDTH PRODUCT (MHz)
PNP NJW21193G
6.5
6.0
VCE = 10 V
5.5
5V
5.0
4.5
4.0
3.5
3.0
0.1
TJ = 25°C
ftest = 1 MHz
1.0
10
8.0
7.0
10 V
6.0
5.0
VCE = 5 V
4.0
3.0
2.0
1.0
0
0.1
TJ = 25°C
ftest = 1 MHz
1.0
IC COLLECTOR CURRENT (AMPS)
IC COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
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2
10
NJW21193G (PNP) NJW21194G (NPN)
TYPICAL CHARACTERISTICS
PNP NJW21193G
NPN NJW21194G
1000
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
1000
TJ = 100°C
25°C
100
-25°C
TJ = 100°C
25°C
100
-25°C
VCE = 20 V
10
0.1
VCE = 20 V
1.0
10
IC COLLECTOR CURRENT (AMPS)
10
0.1
100
Figure 4. DC Current Gain, VCE = 20 V
PNP NJW21193G
NPN NJW21194G
1000
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
100
Figure 3. DC Current Gain, VCE = 20 V
1000
TJ = 100°C
25°C
100
-25°C
TJ = 100°C
25°C
100
-25°C
VCE = 5 V
10
0.1
VCE = 20 V
1.0
10
IC COLLECTOR CURRENT (AMPS)
10
0.1
100
Figure 5. DC Current Gain, VCE = 5 V
1.0
10
IC COLLECTOR CURRENT (AMPS)
100
Figure 6. DC Current Gain, VCE = 5 V
PNP NJW21193G
NPN NJW21194G
30
35
25
20
IB = 2 A
I C, COLLECTOR CURRENT (A)
1.5 A
I C, COLLECTOR CURRENT (A)
1.0
10
IC COLLECTOR CURRENT (AMPS)
1A
15
0.5 A
10
5.0
IB = 2 A
30
1.5 A
25
1A
20
0.5 A
15
10
5.0
TJ = 25°C
TJ = 25°C
0
0
0
5.0
10
15
20
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
25
0
Figure 7. Typical Output Characteristics
5.0
10
15
20
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 8. Typical Output Characteristics
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3
25
NJW21193G (PNP) NJW21194G (NPN)
TYPICAL CHARACTERISTICS
PNP NJW21193G
NPN NJW21194G
1.4
TJ = 25°C
IC/IB = 10
2.5
2.0
1.5
1.0
VBE(sat)
0.5
TJ = 25°C
IC/IB = 10
1.2
SATURATION VOLTAGE (VOLTS)
SATURATION VOLTAGE (VOLTS)
3.0
1.0
VBE(sat)
0.8
0.6
0.4
0.2
VCE(sat)
VCE(sat)
0
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
0
0.1
100
1.0
10
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Typical Saturation Voltages
Figure 10. Typical Saturation Voltages
NPN NJW21194G
10
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
PNP NJW21193G
TJ = 25°C
1.0
0.1
0.1
VCE = 5 V (DASHED)
1.0
10
TJ = 25°C
VCE = 20 V (SOLID)
VCE = 5 V (DASHED)
0.1
0.1
100
1.0
10
100
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Typical Base−Emitter Voltage
Figure 12. Typical Base−Emitter Voltage
PNP NJW21193G
NPN NJW21194G
100
10 mSec
IC, COLLECTOR CURRENT (AMPS)
100
IC, COLLECTOR CURRENT (AMPS)
10
1.0
VCE = 20 V (SOLID)
100
100 mSec
10
1 Sec
1.0
10 mSec
100 mSec
10
1 Sec
1.0
0.1
0.1
1.0
10
100
1.0
1000
10
100
1000
VCE, COLLECTOR EMITTER (VOLTS)
VCE, COLLECTOR EMITTER (VOLTS)
Figure 13. Active Region Safe Operating Area
Figure 14. Active Region Safe Operating Area
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4
NJW21193G (PNP) NJW21194G (NPN)
The data of Figure 13 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power than
can be handled to values less than the limitations imposed by
second breakdown.
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
10000
10000
TC = 25°C
C, CAPACITANCE (pF)
Cib
1000
Cob
100
0.1
Cib
1000
Cob
f(test) = 1 MHz)
f(test) = 1 MHz)
1.0
10
100
0.1
100
1.0
10
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 15. NJW21193G Typical Capacitance
Figure 16. NJW21194G Typical Capacitance
1.2
1.1
T , TOTAL HARMONIC
HD
DISTORTION (%)
C, CAPACITANCE (pF)
TC = 25°C
1.0
0.9
0.8
0.7
0.6
10
100
1000
10000
100000
FREQUENCY (Hz)
Figure 17. Typical Total Harmonic Distortion
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5
100
NJW21193G (PNP) NJW21194G (NPN)
+50 V
AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC
DISTORTION
ANALYZER
SOURCE
AMPLIFIER
50 W
DUT
0.5 W
0.5 W
DUT
-50 V
Figure 18. Total Harmonic Distortion Test Circuit
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6
8.0 W
NJW21193G (PNP) NJW21194G (NPN)
PACKAGE DIMENSIONS
TO−3P−3LD
CASE 340AB−01
ISSUE A
B
A
B
C
Q
4
SEATING
PLANE
U
E
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND 0.30mm
FROM THE TERMINAL TIP.
4. DIMENSION A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
L
(3°)
P
K
1
2
3
3X
D
0.25
G
M
A B
S
H
J
F
W
G
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
DIM
A
B
C
D
E
F
G
H
J
K
L
P
Q
U
W
MILLIMETERS
MIN
NOM
MAX
19.70
19.90
20.10
15.40
15.60
15.80
4.60
4.80
5.00
0.80
1.00
1.20
1.45
1.50
1.65
1.80
2.00
2.20
5.45 BSC
1.20
1.40
1.60
0.55
0.60
0.75
19.80
20.00
20.20
18.50
18.70
18.90
3.30
3.50
3.70
3.10
3.20
3.50
5.00 REF
2.80
3.00
3.20
STYLE 2:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 3:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
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