IXYS IXFN180N07 Hiperfet power mosfet Datasheet

HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Symbol
IXFN 200 N06
IXFN 180 N07
IXFN 200 N07
Maximum Ratings
TJ = 25°C to 150°C
VDGR
TJ = 25°C to 150°C; RGS = 1 MW
VGS
VGSM
Continuous
Transient
ID25
TC= 25°C; Chip capability
IL(RMS)
N07
N06
N07
N06
70
60
70
60
V
V
V
V
±20
±30
V
V
Terminal current limit
200
180
100
A
A
A
IDM
IAR
TC = 25°C, pulse width limited by TJM
TC = 25°C
600
100
A
A
EAR
EAS
TC = 25°C
TC = 25°C
30
2
mJ
J
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
T J £ 150°C, RG = 2 W
5
V/ns
PD
TC = 25°C
200N06/200N07
180N07
TJ
TJM
Tstg
VISOL
50/60 Hz, RMS
IISOL £ 1 mA
Md
Mounting torque
Terminal connection torque
520
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
2500
3000
V~
V~
t = 1 min
t=1s
1.5/13Nm/lb.in.
1.5/13Nm/lb.in.
Weight
Symbol
30
Test Conditions
VDSS
VGS = 0 V, ID = 1 mA
VGS (th)
VDS = VGS, ID = 8 mA
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 125°C
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
200N06/200N07
Pulse test, t £ 300 ms, duty cycle d £ 2 %
180N07
60
70
2
TJ = 25°C
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
g
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
N06
N07
ID25
RDS(on)
60 V
70 V
70 V
200 A
180 A
200 A
6 mW
7 mW
6 mW
trr £ 250 ns
Test Conditions
VDSS
VDSS
4
V
V
V
±200
nA
400
2
mA
mA
6 mW
7 mW
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• International standard packages
• miniBLOC with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Applications
•
•
•
•
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount
• Space savings
• High power density
97533A (9/99)
1-4
IXFN 200N06
Symbol
Test Conditions
gfs
VDS = 10 V; ID = 0.5 • ID25, pulse test
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
60
C iss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
C rss
td(on)
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
td(off)
RG = 1 W (External),
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
miniBLOC, SOT-227 B
RthCK
miniBLOC, SOT-227 B
Source-Drain Diode
Symbol
Test Conditions
IS
VGS = 0 V
ISM
VSD
t rr
QRM
IRM
IXFN 180N07 IXFN 200N07
80
S
9000
pF
4000
pF
2400
pF
30
ns
60
ns
M4 screws (4x) supplied
100
ns
Dim.
60
ns
480
Inches
Min.
Max.
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
nC
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
60
nC
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
240
nC
G
H
30.12
38.00
30.30
38.23
1.186
1.496
1.193
1.505
K/W
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
K/W
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
0.24
0.05
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
A
A
Repetitive; pulse width limited by TJM
600
A
IF = 100 A, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
1.7
V
200N06/200N07
180N07
250
ns
150
© 2000 IXYS All rights reserved
Millimeter
Min.
Max.
A
B
200
180
IF = 25 A
-di/dt = 100 A/ms,
VR = 50 V
miniBLOC, SOT-227 B
0.7
mC
9
A
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-4
IXFN 200N06
600
TJ = 25OC
150
125
ID - Amperes
TJ=25OC
VGS=10V
9V
8V
7V
6V
100
5V
75
VGS=10V
9V
8V
500
ID - Amperes
175
IXFN 180N07 IXFN 200N07
50
400
7V
300
6V
200
5V
100
25
0
0.0
0.5
1.0
1.5
0
2.0
0
1
2
3
4
VDS - Volts
7
8
9
10
Figure 2. Extended Output Characteristics
600
Transconductance - Siemens
80
VDS > 4RDS(ON)
500
TJ=150OC
ID - Amperes
6
VDS - Volts
Figure 1. Output Characteristics at 25OC
400
TJ=25OC
300
TJ=100OC
200
100
0
2
4
6
8
10
TJ = 25oC
VGS=10V
70
60
TJ = 100oC
50
40
TJ = 150oC
30
20
10
0
12
0
100
200
VGS - Volts
300
400
500
600
IC - Amperes
Figure 3. Admittance Curves
Figure 4.
1.4
Transconductance vs.
Drain Current
2.25
TJ = 25oC
2.00
1.3
RDS(ON) - Normalized
RDS(ON) - Normalized
5
1.2
1.1
VGS = 10V
1.0
VGS = 15V
0.9
ID = 75A
VGS = 10V
1.75
1.50
1.25
1.00
0.75
0.8
0
100
200
300
400
500
ID - Amperes
Figure 5. RDS(on) normalized to 0.5 ID25 value
© 2000 IXYS All rights reserved
600
0.50
-50 -25
0
25
50
75 100 125 150 175
TJ - Degrees C
Figure 6. Normalized RDS(on) vs. Junction
Temperature
3-4
IXFN 200N06
16
250
14
IXFN200
VDS = 40V
ID = 38A
IG = 1mA
200
ID - Amperes
12
VGS - Volts
IXFN 180N07 IXFN 200N07
10
8
6
4
IXFN180
150
(Terminal current limit)
100
50
2
0
0
100
200
300
400
500
600
0
-50
700
-25
0
25
50
75
100 125 150
O
Gate Charge - nCoulombs
Case Temperature - C
Figure 7. Gate Charge
Figure 8. Drain Current vs. Case
Temperature
12000
400
TJ =150OC
F = 1MHz
300
Ciss
8000
ID - Amperes
p
10000
6000
p
Coss
4000
TJ =25OC
O
TJ =150 C
100
Crss
2000
200
TJ =100OC
0
0
10
20
30
40
0
0.0
0.5
VDS - Volts
1.0
1.5
2.0
VSD - Volts
Figure 9. Capacitance Curves
Figure 10. Source-Drain Voltage vs. Source Current
Thermal Response - K/W
100
10-1
10-2
10-3
10-2
10-1
100
Time - Seconds
Figure 11. Transient Thermal Resistance
© 2000 IXYS All rights reserved
4-4
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