Excelics EIC0910-5 9.50-10.50ghz,5w internally matched power fet Datasheet

EIC0910-5
ISSUED DATE: 04-19-04
EIC0910-5
Excelics
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9.50-10.50 GHz BANDWIDTH AND INPUT/OUTPUT
IMPEDANCE MATCHED TO 50 OHM
HIGH PAE: 30% TYPICAL
+37.5 dBm TYPICAL P1dB OUTPUT POWER
7dB TYPICAL G1dB POWER GAIN
HERMETIC METAL FLANGE PACKAGE
YM
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SN
9.50-10.50GHz,
5W Internally Matched Power FET
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
EIC0910-5
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN
TYP
MAX
UNIT
P1dB
Output Power at 1dB Compression
f=9.5-10.5GHz, Vds=10V, Idsq=1600mA
36.5
37.5
dBm
G1dB
Gain at 1dB Compression
f=9.5-10.5GHz, Vds=10V, Idsq=1600mA
6
7
dB
PAE
Gain Flatness
f = 9.5-10.5GHz, Vds = 10 V, Idsq = 1600mA
Power Added Efficiency at 1dB compression
f=9.5-10.5GHz, Vds=10V, Idsq=1600mA
Id1dB
Drain Current at 1dB Compression
IM3
Output 3rd Order Intermodulation Distortion f=10.5GHz
∆f=10MHz 2-Tone Test. Pout=26.5 dBm S.C.L
Ids @ 65% Idss
Idss
Saturated Drain Current
Vds=3V, Vgs=0V
2900
3500
mA
Vp
Pinch-off Voltage
Vds=3V, Ids=30mA
-2.5
-4
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
5.0
5.5
∆G
±0.6
dB
30
1700
%
1900
mA
dBc
-43
-46
o
C/W
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION AT 25°C
SYMBOLS
PARAMETERS
CONTINUOUS1,2
Vds
Drain-Source Voltage
10V
Vgs
Gate-Source Voltage
-4.5V
Ids
Drain Current
Idss
Igsf
Forward Gate Current
60mA
Pin
Input Power
@ 3dB Compression
Tch
Channel Temperature
150 oC
Tstg
Storage Temperature
-65 to +150 oC
Pt
Total Power Dissipation
23W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
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