Renesas FS3UM-10 High-speed switching use Datasheet

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MITSUBISHI Nch POWER MOSFET
FS3UM-10
HIGH-SPEED SWITCHING USE
FS3UM-10
OUTLINE DRAWING
Dimensions in mm
4.5
10.5MAX.
1.3
16
7.0
3.2
r
1.0
3.8MAX.
0.8
2.54
2.54
0.5
2.6
4.5MAX.
12.5MIN.
φ 3.6
q w e
wr
q GATE
w DRAIN
e SOURCE
r DRAIN
q
¡VDSS ................................................................................ 500V
¡rDS (ON) (MAX) ................................................................. 4.4Ω
¡ID ............................................................................................ 3A
e
TO-220
APPLICATION
SMPS, DC-DC Converter, Battery charger, Power
supply of Printer, Copier, TV, VCR, Personal computer etc.
MAXIMUM RATINGS
Symbol
(Tc = 25°C)
Parameter
VDSS
VGSS
Drain-source voltage
Gate-source voltage
ID
IDM
PD
Drain current
Drain current (Pulsed)
Maximum power dissipation
Tch
Tstg
—
Channel temperature
Storage temperature
Weight
Conditions
VGS = 0V
VDS = 0V
Typical value
Ratings
Unit
500
±30
V
V
3
9
60
A
A
W
–55 ~ +150
–55 ~ +150
2.0
°C
°C
g
Sep. 2001
MITSUBISHI Nch POWER MOSFET
FS3UM-10
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
(Tch = 25°C)
Symbol
Parameter
V (BR) DSS
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
Gate-source threshold voltage
Drain-source on-state resistance
VDS (ON)
yfs
Ciss
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Coss
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Limits
Test conditions
Turn-off delay time
Fall time
Source-drain voltage
Typ.
Max.
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
500
±30
—
—
—
—
—
—
±10
V
V
µA
VDS = 500V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 1A, VGS = 10V
ID = 1A, VGS = 10V
ID = 1A, VDS = 10V
—
2
—
—
—
3
3.4
3.4
1
4
4.4
4.4
mA
V
Ω
V
1.0
—
—
—
1.5
300
35
6
—
—
—
—
S
pF
pF
pF
—
—
—
—
13
10
30
30
—
—
—
—
ns
ns
ns
ns
—
1.5
2.0
V
—
—
2.08
°C/W
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 1A, VGS = 10V, RGEN = RGS = 50Ω
IS = 1A, VGS = 0V
Channel to case
Thermal resistance
Unit
Min.
PERFORMANCE CURVES
DRAIN CURRENT ID (A)
80
60
40
20
0
0
DRAIN CURRENT ID (A)
10
50
100
150
tw=10µs
100µs
100
7
5
3
2
1ms
10ms
DC
10–1
7
5
3
2
TC = 25°C
Single Pulse
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V
10V
8V
6
4
6V
2
5V
10
20
5
TC = 25°C
Pulse Test
PD = 60W
0
101
7
5
3
2
10–2
200
8
0
MAXIMUM SAFE OPERATING AREA
DRAIN CURRENT ID (A)
POWER DISSIPATION PD (W)
POWER DISSIPATION DERATING CURVE
100
30
40
50
DRAIN-SOURCE VOLTAGE VDS (V)
TC = 25°C
Pulse Test
4
PD = 60W
VGS = 20V
10V
8V
6V
3
2
5V
1
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
Sep. 2001
MITSUBISHI Nch POWER MOSFET
FS3UM-10
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
10
TC = 25°C
Pulse Test
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (Ω)
DRAIN-SOURCE ON-STATE
VOLTAGE VDS (ON) (V)
40
32
24
ID = 4A
16
3A
2A
8
1A
0
0
4
8
12
16
101
7
5
FORWARD TRANSFER
ADMITTANCE yfs (S)
8
12
16
VDS = 10V
Pulse Test
3
2
TC = 25°C
100
7
5
75°C
125°C
3
2
10–1 –1
10
20
2 3
5 7 100
2 3
5 7 101
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
5
Ciss
Coss
101
7 Tch = 25°C
Crss
5 f = 1MHz
3 VGS = 0V
2
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2
DRAIN-SOURCE VOLTAGE VDS (V)
SWITCHING TIME (ns)
DRAIN CURRENT ID (A)
CAPACITANCE
Ciss, Coss, Crss (pF)
4
102
7
5
3
2
2
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
2
3
2
4
TRANSFER CHARACTERISTICS
(TYPICAL)
4
7
5
20V
DRAIN CURRENT ID (A)
TC = 25°C
VDS = 50V
Pulse Test
0
6
GATE-SOURCE VOLTAGE VGS (V)
6
0
VGS = 10V
8
0
10–2 2 3 5 7 10–1 2 3 5 7 100 2 3 5 7 101
20
10
8
TC = 25°C
Pulse Test
3
2
102
7
5
3
2
Tch = 25°C
VDD = 200V
VGS = 10V
RGEN = RGS = 50Ω
tf
td(off)
td(on)
101
tr
7
5
10–1 2 3
5 7 100
2 3
5 7 101
DRAIN CURRENT ID (A)
Sep. 2001
MITSUBISHI Nch POWER MOSFET
FS3UM-10
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
VDS = 100V
200V
12
400V
8
4
101
7
5
0
4
8
12
16
25°C
6
75°C
4
2
0
0.8
1.6
2.4
3.2
4.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
VGS = 10V
ID = 1A
Pulse Test
100
7
5
3
2
–50
0
50
100
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
VDS = 10V
ID = 1mA
4.0
3.0
2.0
1.0
0
150
CHANNEL TEMPERATURE Tch (°C)
0.4
VGS = 0V
Pulse Test
GATE CHARGE Qg (nC)
3
2
10–1
TC = 125°C
8
0
20
GATE-SOURCE THRESHOLD
VOLTAGE VGS (th) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
SOURCE CURRENT IS (A)
16
0
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
10
Tch = 25°C
ID = 3A
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/ W)
GATE-SOURCE VOLTAGE VGS (V)
20
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
101
7
5
3 D=1
2
0.5
100
7 0.2
5
3
2
10–1
7
5
3
2
0.1
PDM
0.05
0.02
0.01
tw
T
Single Pulse
D= tw
T
10–2
10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
PULSE WIDTH tw (s)
Sep. 2001
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