IRF IRFH5020TR2PBF Hexfetpower mosfet Datasheet

PD - 97359
IRFH5053PbF
HEXFET® Power MOSFET
Applications
l
3 Phase Boost Converter Applications
l
Secondary Side Synchronous Rectification
VDSS
100V
RDS(on) max
18mΩ@VGS = 10V
Qg
24nC
Benefits
l
l
l
l
l
l
l
l
Very low RDS(ON) at 10V VGS
Low Gate Charge
Fully Characterized Avalanche Voltage and
Current
100% Tested for RG
Lead-Free (Qualified up to 260°C Reflow)
RoHS compliant (Halogen Free)
Low Thermal Resistance
Large Source Lead for more reliable Soldering
S
S
S
D
D
G
D
D
PQFN
Absolute Maximum Ratings
Parameter
Max.
VDS
Drain-to-Source Voltage
100
VGS
± 20
ID @ TA = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
7.4
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
46
Power Dissipation
3.1
IDM
PD @TA = 70°C
TJ
Linear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
V
9.3
c
g
Power Dissipation g
PD @TA = 25°C
Units
A
75
W
2.0
g
W/°C
0.025
-55 to + 150
°C
Thermal Resistance
Parameter
f
RθJC
Junction-to-Case
RθJA
Junction-to-Ambient
Notes  through
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g
Typ.
Max.
–––
1.6
–––
40
Units
°C/W
are on page 9
1
12/16/08
IRFH5053PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/∆TJ
RDS(on)
Drain-to-Source Breakdown Voltage
100
–––
–––
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
0.11
14.4
–––
18
VGS(th)
∆VGS(th)
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
3.0
–––
3.7
-11
4.9
–––
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
20
250
µA
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
–––
–––
100
-100
nA
VGS = 20V
VGS = -20V
gfs
Qg
Forward Transconductance
Total Gate Charge
19
–––
–––
24
–––
36
S
VDS = 50V, ID = 7.4A
Qgs1
Qgs2
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
–––
–––
5.2
1.5
–––
–––
Qgd
Qgodr
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
–––
–––
8.6
8.7
–––
–––
Output Charge
–––
–––
10.1
12
–––
–––
RG
td(on)
Gate Resistance
Turn-On Delay Time
–––
–––
0.8
12
–––
–––
tr
td(off)
Rise Time
Turn-Off Delay Time
–––
–––
7.5
18
–––
–––
tf
Ciss
Fall Time
Input Capacitance
–––
–––
4.1
1510
–––
–––
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
–––
–––
230
59
–––
–––
Qsw
Qoss
V
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 9.3A
e
V
VDS = VGS, ID = 100µA
mV/°C
nC
nC
VDS = 50V
VGS = 10V
ID = 7.4A
See Fig.17 & 18
VDS = 16V, VGS = 0V
Ω
VDD = 50V, VGS = 10V
ns
ID = 7.4A
RG=1.8Ω
See Fig.15
VGS = 0V
pF
VDS = 50V
ƒ = 1.0MHz
Avalanche Characteristics
EAS
IAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
c
Typ.
–––
–––
d
Max.
21
7.4
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
VSD
Min. Typ. Max. Units
–––
–––
Conditions
MOSFET symbol
2.8
A
D
showing the
integral reverse
G
(Body Diode)
Diode Forward Voltage
–––
–––
75
–––
–––
1.3
V
S
p-n junction diode.
TJ = 25°C, IS = 7.4A, VGS = 0V
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
31
210
47
320
ns
nC
TJ = 25°C, IF = 7.4A, VDD = 50V
di/dt = 800A/µs
See Fig.16
ton
Forward Turn-On Time
2
c
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRFH5053PbF
100
100
10
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
1
0.1
4.5V
0.01
0.1
1
10
BOTTOM
1
4.5V
≤60µs PULSE WIDTH
0.1
100
1000
0.1
V DS, Drain-to-Source Voltage (V)
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
≤60µs PULSE WIDTH
Tj = 150°C
Tj = 25°C
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
T J = 150°C
10
T J = 25°C
1
VDS = 50V
≤60µs PULSE WIDTH
0.1
ID = 9.3A
VGS = 10V
2.0
1.5
1.0
0.5
3
4
5
6
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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7
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3
IRFH5053PbF
100000
VGS, Gate-to-Source Voltage (V)
ID= 7.4A
C oss = C ds + C gd
10000
C, Capacitance (pF)
14.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
Ciss
Coss
1000
Crss
100
12.0
VDS= 80V
VDS= 50V
10.0
8.0
6.0
4.0
2.0
0.0
10
1
10
0
100
5
10
15
20
25
30
QG, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
1000
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
T A = 25°C
100
TJ = 150°C
10
OPERATION IN THIS AREA
Tj = 150°C
LIMITED BY R DS(on)
Single Pulse
T J = 25°C
1
1msec
10
100µsec
10msec
DC
1
VGS = 0V
0.1
0.1
0.2
0.4
0.6
0.8
1.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1.2
0.01
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFH5053PbF
4.5
VGS(th) , Gate Threshold Voltage (V)
10
ID, Drain Current (A)
8
6
4
2
0
4.0
3.5
ID = 100µA
3.0
2.5
2.0
25
50
75
100
125
150
-75 -50 -25
T A , Ambient Temperature (°C)
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Ambient Temperature
Fig 10. Threshold Voltage vs. Temperature
Thermal Response ( Z thJA ) °C/W
100
D = 0.50
10
0.20
0.10
0.05
1
τJ
0.02
0.01
R1
R1
τJ
τ1
R2
R2
R3
R3
τA
τ1
τ2
τ2
τ3
τ3
τ4
τA
τ4
Ci= τi/Ri
Ci= τi/Ri
0.1
1E-005
0.0001
0.001
1.3862
0.000201
3.6808
0.013839
18.148
0.993400
16.804
37.6
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
τi (sec)
Ri (°C/W)
R4
R4
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
50
90
EAS , Single Pulse Avalanche Energy (mJ)
RDS(on), Drain-to -Source On Resistance (m Ω)
IRFH5053PbF
ID = 9.3A
40
T J = 125°C
30
20
T J = 25°C
10
ID
TOP
1.5A
1.9A
BOTTOM 7.4A
80
70
60
50
40
30
20
10
0
4
6
8
10
12
14
16
25
50
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
V DS
V GS
VDS
+
V
- DD
IAS
20V
125
150
RD
D.U.T.
RG
DRIVER
D.U.T
RG
100
Fig 13. Maximum Avalanche Energy
vs. Drain Current
15V
L
75
Starting T J , Junction Temperature (°C)
+
-V DD
V10V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
A
0.01Ω
tp
Fig 14a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
Fig 15a. Switching Time Test Circuit
VDS
90%
10%
VGS
I AS
Fig 14b. Unclamped Inductive Waveforms
6
td(on)
tr
td(off)
tf
Fig 15b. Switching Time Waveforms
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IRFH5053PbF
D.U.T
Driver Gate Drive
P.W.
+
ƒ
-
‚
-
-
„
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+

RG
• dv/dt controlled by RG
• Driver same type as D.U.T.
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D=
Period
V DD
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Current Regulator
Same Type as D.U.T.
Id
Vds
Vgs
50KΩ
12V
.2µF
.3µF
D.U.T.
+
V
- DS
Vgs(th)
VGS
3mA
IG
ID
Qgs1 Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 17. Gate Charge Test Circuit
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Fig 18. Gate Charge Waveform
7
IRFH5053PbF
PQFN Package Details
PQFN Part Marking
INTERNATIONAL
RECTIFIER LOGO
6
DATE CODE
XXXX
ASSEMBLY SITE CODE
(Per SCOP 200-002)
PART NUMBER
XYWWX
XXXXX
MARKING CODE
(Per Marking Spec.)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min. last 4 digits of EATI #)
(Prod Mode - 4 digits SPN code)
TOP MARKING (LASER)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRFH5053PbF
PQFN Tape and Reel
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 0.75mH, RG = 25Ω, IAS = 7.4A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ Rthjc is guaranteed by design
When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/08
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9
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