MMBT4401L, SMMBT4401L Switching Transistor NPN Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique • www.onsemi.com Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage VEBO 6.0 Vdc IC 600 mAdc ICM 900 mAdc Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C Collector Current − Continuous Collector Current − Peak 2 EMITTER 3 1 SOT−23 (TO−236) CASE 318 STYLE 6 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) @TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) @TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature MARKING DIAGRAM PD RqJA PD Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *Transient pulses must not cause the junction temperature to be exceeded. 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 2X M G G 1 2X = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† MMBT4401LT1G SMMBT4401LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel MMBT4401LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1994 October, 2016 − Rev. 11 1 Publication Order Number: MMBT4401LT1/D MMBT4401L, SMMBT4401L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector −Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 60 − Vdc Emitter −Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) IBEV − 0.1 mAdc Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) ICEX − 0.1 mAdc 20 40 80 100 40 − − − 300 − − − − 0.4 0.75 0.75 − 0.95 1.2 ON CHARACTERISTICS (Note 3) DC Current Gain hFE (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) Collector −Emitter Saturation Voltage VCE(sat) Vdc (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base −Emitter Saturation Voltage VBE(sat) Vdc (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) fT 250 − MHz Collector−Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Ccb − 6.5 pF Emitter−Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb − 30 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 1.0 15 kW Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 0.1 8.0 X 10− 4 Small −Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 40 500 − Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 30 mmhos (VCC = 30 Vdc, VEB = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) td − 15 tr − 20 (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) ts − 225 tf − 30 SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time ns ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +30 V +16 V 0 -2.0 V 1.0 to 100 ms, DUTY CYCLE ≈ 2.0% 200 W +16 V 1.0 to 100 ms, DUTY CYCLE ≈ 2.0% 200 W 0 1.0 kW < 2.0 ns 1.0 kW -14 V CS* < 10 pF < 20 ns -4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn−On Time Figure 2. Turn−Off Time www.onsemi.com 2 CS* < 10 pF MMBT4401L, SMMBT4401L TRANSIENT CHARACTERISTICS 25°C 10 7.0 5.0 100°C VCC = 30 V IC/IB = 10 Q, CHARGE (nC) 3.0 QT 2.0 1.0 0.7 0.5 0.3 0.2 QA 0.1 10 20 200 50 70 100 30 IC, COLLECTOR CURRENT (mA) 300 500 Figure 3. Charge Data 100 100 IC/IB = 10 70 VCC = 30 V IC/IB = 10 70 tr 50 tr @ VCC = 30 V tr @ VCC = 10 V td @ VEB = 2.0 V td @ VEB = 0 30 20 t, TIME (ns) t, TIME (ns) 50 20 10 10 7.0 7.0 5.0 5.0 10 20 30 50 70 200 100 300 500 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 4. Turn−On Time Figure 5. Rise and Fall Times 300 300 500 100 ts′ = ts - 1/8 tf IB1 = IB2 IC/IB = 10 to 20 VCC = 30 V IB1 = IB2 70 50 t f , FALL TIME (ns) 200 t s′, STORAGE TIME (ns) tf 30 100 70 IC/IB = 20 30 20 IC/IB = 10 10 50 7.0 30 5.0 10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 6. Storage Time Figure 7. Fall Time www.onsemi.com 3 300 500 MMBT4401L, SMMBT4401L SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz 10 10 IC = 1.0 mA, RS = 150 W IC = 500 mA, RS = 200 W IC = 100 mA, RS = 2.0 kW IC = 50 mA, RS = 4.0 kW 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 8.0 f = 1.0 kHz RS = OPTIMUM RS = SOURCE RS = RESISTANCE 6.0 4.0 2.0 IC = 50 mA IC = 100 mA IC = 500 mA IC = 1.0 mA 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 f, FREQUENCY (kHz) 0 10 20 50 100 50 100 200 Figure 8. Frequency Effects 500 1.0k 2.0k 5.0k 10k 20k RS, SOURCE RESISTANCE (OHMS) 50k 100k Figure 9. Source Resistance Effects h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C This group of graphs illustrates the relationship between hfe and other “h” parameters for this series of transistors. To obtain these curves, a high−gain and a low−gain unit were selected from the MMBT4401LT1 lines, and the same units were used to develop the correspondingly numbered curves on each graph. hie , INPUT IMPEDANCE (OHMS) 50k MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 20k 10k 5.0k 2.0k 1.0k 500 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) Figure 10. Input Impedance 100 hoe, OUTPUT ADMITTANCE (m mhos) h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) 10 7.0 5.0 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 50 20 10 2.0 1.0 0.1 5.0 7.0 10 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 5.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11. Voltage Feedback Ratio Figure 12. Output Admittance www.onsemi.com 4 5.0 7.0 10 MMBT4401L, SMMBT4401L STATIC CHARACTERISTICS 500 450 h FE, DC CURRENT GAIN 400 VCE = 5.0 V VCE = 2.0 V VCE = 1.0 V TJ = 150°C 350 300 25°C 250 200 -55°C 150 100 50 0 1 0.1 IC, COLLECTOR CURRENT (A) 0.01 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13. DC Current Gain 1.2 1.0 0.8 IC = 1.0 mA 100 mA 10 mA 300 mA 500 mA 0.6 0.4 0.2 0 0.001 0.01 0.1 1 100 10 IB, BASE CURRENT (mA) 0.35 +0.5 IC/IB = 10 0.30 0 COEFFICIENT (mV/ °C) VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) Figure 14. Collector Saturation Region 0.25 150°C 0.20 25°C 0.15 0.10 -55°C 0 0.1 0.001 0.01 IC, COLLECTOR CURRENT (A) -0.5 -1.0 -1.5 -2.0 0.05 0.0001 qVC for VCE(sat) -2.5 0.1 0.2 1 Figure 15. Collector−Emitter Saturation Voltage vs. Collector Current qVB for VBE 0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 Figure 16. Temperature Coefficients www.onsemi.com 5 500 MMBT4401L, SMMBT4401L STATIC CHARACTERISTICS 1.0 IC/IB = 10 VBE(on), BASE−EMITTER TURN ON VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.1 1.0 0.9 −55°C 0.8 0.7 25°C 0.6 0.5 150°C 0.4 VCE = 2.0 V 0.9 −55°C 0.8 0.7 25°C 0.6 0.5 0.4 150°C 0.3 0.3 0.0001 0.001 0.01 0.1 0.0001 1 IC, COLLECTOR CURRENT (A) 1 0.1 Figure 18. Base−Emitter Turn On Voltage vs. Collector Current 8.5 Cobo, OUTPUT CAPACITANCE (pF) 21 Cibo, INPUT CAPACITANCE (pF) 0.01 IC, COLLECTOR CURRENT (A) Figure 17. Base−Emitter Saturation Voltage vs. Collector Current 19 17 15 13 11 7.5 6.5 5.5 4.5 3.5 2.5 1.5 9 0 1 2 3 4 0 6 5 5 Veb, EMITTER BASE VOLTAGE (V) fT, CURRENT−GAIN−BANDWIDTH (MHz) 10 msec 1 sec 0.01 0.001 1 15 20 25 30 35 40 50 45 Figure 20. Output Capacitance vs. Collector Base Voltage 1 0.1 10 Vcb, COLLECTOR BASE VOLTAGE (V) Figure 19. Input Capacitance vs. Emitter Base Voltage IC, COLLECTOR CURRENT (A) 0.001 10 100 1000 VCE = 1.0 V TA = 25°C 100 10 0.1 1 10 100 1000 VCE, COLLECTOR EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (mA) Figure 21. Safe Operating Area Figure 22. Current−Gain−Bandwidth Product www.onsemi.com 6 MMBT4401L, SMMBT4401L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.25 3 E 1 2 T HE DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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