Renesas CR04AM-12 Thyristor low power use Datasheet

CR04AM-12
Thyristor
Low Power Use
REJ03G0354-0200
Rev.2.00
Mar.01.2005
Features
• IT (AV) : 0.4 A
• VDRM : 600 V
• IGT : 100 µA
• Glass Passivation Type
Outline
PRSS0003EA-A
(Package name: TO-92)
2
1. Cathode
2. Anode
3. Gate
3
1
3
2
1
Applications
Igniter, solid state relay, strobe flasher, circuit breaker, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltageNote1
DC off-state voltageNote1
Rev.2.00,
Mar.01.2005,
page 1 of 7
Symbol
VRRM
VRSM
VR (DC)
VDRM
VD (DC)
Voltage class
12
600
720
480
600
480
Unit
V
V
V
V
V
CR04AM-12
Parameter
RMS on-state current
Average on-state current
Symbol
IT (RMS)
IT (AV)
Ratings
0.63
0.4
Unit
A
A
ITSM
10
A
I2 t
0.4
A2s
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
—
0.5
0.1
6
6
0.3
– 40 to +125
– 40 to +125
0.23
W
W
V
V
A
°C
°C
g
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mass
Conditions
Commercial frequency, sine half wave
180° conduction, Ta = 54°C
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Notes: 1. With gate to cathode resistance RGK = 1 kΩ.
Electrical Characteristics
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
Symbol
IRRM
IDRM
Min.
—
—
Typ.
—
—
Max.
0.5
0.5
Unit
mA
mA
On-state voltage
VTM
—
—
1.2
V
Ta = 25°C, ITM = 1.2 A,
instantaneous value
Gate trigger voltage
VGT
—
—
0.8
V
Tj = 25°C, VD = 6 V,
Note3
IT = 0.1 A
Gate non-trigger voltage
VGD
0.2
—
—
V
Tj = 125°C, VD = 1/2 VDRM,
RGK = 1 kΩ
Gate trigger current
IGT
1
—
100Note2
µA
Tj = 25°C, VD = 6 V,
Note3
IT = 0.1 A
Holding current
IH
—
1.5
3
mA
Rth (j-a)
—
—
150
°C/W
Tj = 25°C, VD = 12 V,
RGK = 1 kΩ
Junction to ambient
Thermal resistance
Test conditions
Tj = 125°C, VRRM applied
Tj = 125°C, VDRM applied,
RGK = 1 kΩ
Notes: 2. If special values of IGT are required, choose item D or E from those listed in the table below if possible.
Item
A
B
C
D
E
IGT (µA)
1 to 30
20 to 50
40 to 100
1 to 50
20 to 100
The above values do not include the current flowing through the 1 kΩ resistance between the gate and
cathode.
3. IGT, VGT measurement circuit.
A1
3V
DC
IGS
IGT
A3
A2
RGK
1
1kΩ
Switch
2
60Ω
TUT
V1
6V
DC
VGT
Switch 1 : IGT measurement
Switch 2 : VGT measurement
(Inner resistance of voltage meter is about 1kΩ)
Rev.2.00,
Mar.01.2005,
page 2 of 7
CR04AM-12
Performance Curves
102
7
5
3
2
10
Surge On-State Current (A)
Ta = 25°C
101
7
5
3
2
100
7
5
3
2
1
2
3
4
5
Gate Voltage (V)
PGM = 0.5W
7
5 V
GT = 0.8V
3 (Tj = 25°C)
2
100
7
5
3
2
PG(AV) = 0.1W
IGT = 100µA
(Tj = 25°C)
IFGM = 0.3V
VGD = 0.2V
10–2
10–2 2 3 5710–12 3 57100 2 3 57101 2 3 57102 2 3
3
2
1
2 3 4 5 7 101
2 3 4 5 7 102
103
7 Typical Example
5
3
2
102
7
5
3
2
101
7
5
3
2
100
–40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
0.9
Gate Trigger Voltage (V)
4
Gate Current (mA)
1.0
Distribution
0.8
Typical Example
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
–40 –20
0
20
40
60
80 100 120
Junction Temperature (°C)
Rev.2.00,
5
Gate Trigger Current vs.
Junction Temperature
VFGM = 6V
7
5
3
2
6
Gate Characteristics
101
10–1
7
Conduction Time (Cycles at 60Hz)
102
7
5
3
2
8
On-State Voltage (V)
× 100 (%)
0
9
0
100
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
10–1
Rated Surge On-State Current
Mar.01.2005,
page 3 of 7
Transient Thermal Impedance (°C/W)
On-State Current (A)
Maximum On-State Characteristics
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
103
7
5
3
2
102
7
5
3
2
101
7
5
3
2
100
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100
Time (s)
CR04AM-12
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Maximum Average Power Dissipation
(Single-Phase Half Wave)
0.7
0.6
0.5
0.4
0.3
θ
0.2
360°
0.1
0
Resistive,
inductive loads
0
120
Resistive,
inductive loads
Natural convection
100
80
60
θ = 30°
40
90°
180°
60° 120°
20
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Average On-State Current (A)
Maximum Average Power Dissipation
(Single-Phase Full Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
160
θ = 30° 90°
60° 120°
180°
0.7
0.6
0.5
0.4
0.3
0.2
θ
θ
360°
0.1
Resistive loads
0
140
θ
120
θ
360°
Resistive loads
Natural convection
100
80
60
40
20
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
θ = 30° 60° 90° 120°
0
180°
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Average On-State Current (A)
Average On-State Current (A)
Maximum Average Power Dissipation
(Rectangular Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Rectangular Wave)
160
90° 180°
θ = 30° 60° 120° 270°
DC
0.7
0.6
0.5
0.4
0.3
θ
0.2
360°
0.1
0
Resistive,
inductive loads
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Average On-State Current (A)
Mar.01.2005,
page 4 of 7
Ambient Temperature (°C)
0.8
Average Power Dissipation (W)
θ
360°
Average On-State Current (A)
0
Rev.2.00,
140
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0.8
Average Power Dissipation (W)
Ambient Temperature (°C)
160
60° 120°
θ = 30°
90°
180°
Ambient Temperature (°C)
Average Power Dissipation (W)
0.8
140
θ
120
360°
Resistive,
inductive loads
Natural convection
100
80
60
40
20
0
θ = 30°
0
60° 120°
270°
90° 180°
DC
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Average On-State Current (A)
Typical Example
140
120
100
80
60
40
20
RGK = 1kΩ
0
–40 –20 0 20 40 60 80 100 120 140 160
160
Breakover Voltage vs.
Gate to Cathode Resistance
120
Typical Example
100
80
60
40
20
Tj = 125°C
0
–1
10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Junction Temperature (°C)
Gate to Cathode Resistance (kΩ)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Holding Current vs.
Junction Temperature
Typical Example
Holding Current (mA)
140
Tj = 125°C
RGK = 1kΩ
120
100
80
60
40
20
101
7
5
3
2
Distribution
Typical Example
IGT(25°C) = 35µA
100
7
5
3
2
10–1
7
5
3
2
RGK = 1kΩ
10–2
–60 –40 –20 0 20 40 60 80 100 120 140
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Rate of Rise of Off-State Voltage (V/µs)
Junction Temperature (°C)
Holding Current vs.
Gate to Cathode Resistance
Holding Current vs.
Gate Trigger Current
500
Typical Example
IGT(25°C) IH(1kΩ)
0.9mA
# 1 25µA
400
300
200
#1
100
4.0
Tj = 25°C
3.5
3.0
2.5
2.0
1.5
1.0
0.5
Tj = 25°C
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Gate to Cathode Resistance (kΩ)
Rev.2.00,
Breakover Voltage (RGK = rkΩ)
Breakover Voltage (RGK = 1kΩ)
160
Holding Current (mA)
Holding Current (RGK = rkΩ)
Holding Current (RGK = 1kΩ)
× 100 (%)
Breakover Voltage (dv/dt = vV/µs)
Breakover Voltage (dv/dt = 1V/µs)
× 100 (%)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C)
× 100 (%)
Breakover Voltage vs.
Junction Temperature
× 100 (%)
CR04AM-12
Mar.01.2005,
page 5 of 7
0
100
2
3
5 7 101
2
3
5 7 102
Gate Trigger Current (µA)
CR04AM-12
Turn-Off Time vs.
Junction Temperature
102
7 Typical Example
5
3
2
VD = 100V
RL = 47Ω
RGK = 1kΩ
Ta = 25°C
101
7
5
3
2
100
7
5
3
2
40
VD = 50V, VR = 50V
35 IT = 2A, RGK = 1kΩ
Turn-Off Time (µs)
Turn-On Time (µs)
Turn-On Time vs.
Gate Current
Distribution
20
15
10
0
0
20
40
60
80 100 120 140 160
Junction Temperature (°C)
Repetitive Peak Reverse Voltage vs.
Junction Temperature
Gate Trigger Current vs.
Gate Current Pulse Width
× 100 (%)
Gate Current (mA)
160
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Mar.01.2005,
page 6 of 7
Gate Trigger Current (tw)
Gate Trigger Current (DC)
× 100 (%)
Repetitive Peak Reverse Voltage (Tj = t°C)
Repetitive Peak Reverse Voltage (Tj = 25°C)
Typical Example
25
5
10–1
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Rev.2.00,
30
104
7
5
3
2
103
7
5
3
2
Typical Example
IGT(DC)
# 1 10µA
# 2 65µA
#1
#2
102
7
5
3
2
Tj = 25°C
101
100 2 3 4 5 7 101
2
3 4 5 7 102
Gate Current Pulse Width (µs)
CR04AM-12
Package Dimensions
JEITA Package Code
RENESAS Code
SC-43A
PRSS0003EA-A
Package Name
MASS[Typ.]
TO-92
Unit: mm
0.23g
φ5.0Max
11.5Min
5.0Max
4.4
1.25 1.25
3.6
1.1
Circumscribed circle φ0.7
Order Code
Lead form
Standard packing
Quantity
Standard order code
Straight type
Vinyl sack
500 Type name
Lead form
Vinyl sack
500 Type name – Lead forming code
Form A8
Taping
2000 Type name – TB
Note : Please confirm the specification about the shipping in detail.
Rev.2.00,
Mar.01.2005,
page 7 of 7
Standard order
code example
CR04AM-12
CR04AM-12-A6
CR04AM-12-TB
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