IRF IRFN140 Power mosfet n-channel(bvdss=100v, rds(on)=0.077ohm, id=28a) Datasheet

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Provisional Data Sheet No. PD-9.1546
HEXFET® POWER MOSFET
IRFN140
N-CHANNEL
Ω HEXFET
100 Volt, 0.077Ω
Product Summary
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-establish
advantages of MOSFETs, such as voltage control, very
fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls,
inverters, choppers, audio amplifiers, and high energy
pulse circuits.
The Surface Mount Device (SMD-1) package represents
another step in the continual evolution of surface mount
technology. The SMD-1 will give designers the extra flexibility they need to increase circuit board density. International Rectifier has engineered the SMD-1 package to
meet the specific needs of the power market by increasing the size of the termination pads, thereby enhancing
thermal and electrical performance.
Part Number
IRFN140
BVDSS
100V
RDS(on)
0.077Ω
ID
28A
Features:
■
■
■
■
■
■
■
Avalanche Energy Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light-weight
Absolute Maximum Ratings
Parameter
I D @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
I AR
EAR
dv/dt
TJ
TSTG
IRFN140
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
To Order
28
20
112
125
1.0
±20
250
28
12.5
5.5
-55 to 150
Units
A
W
W/K ➄
V
mJ
A
mJ
V/ns
oC
300 (for 5 seconds)
2.6 (typical)
g
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IRFN140 Device
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min.
Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
∆BV DSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
100
—
—
0.13
—
—
—
—
2.0
9.1
—
—
—
—
—
—
—
—
0.077
0.125
4.0
—
25
250
IGSS
IGSS
Qg
Qgs
Qgd
t d(on)
tr
t d(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
30
2.4
12
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.0
100
-100
59
12
30.7
21
145
64
105
—
LS
Internal Source Inductance
—
4.1
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1600
550
120
—
—
—
V
V/°C
Ω
V
S( )
Ω
Parameter
µA
nA
nC
ns
Test Conditions
VGS = 0V, ID = 1.0 mA
Reference to 25°C, I D = 1.0 mA
VGS = 10V, ID = 20A ➃
VGS = 10V, ID = 28A
VDS = VGS, ID = 250µA
VDS > 15V, I DS = 20A ➃
VDS = 0.8 x Max Rating,VGS = 0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =10V, ID = 28A
VDS = Max. Rating x 0.5
see figures 6 and 13
VDD = 50V, ID = 28A,
RG = 9.1Ω, VGS = 10V
see figure 10
nH
pF
Measured from the
Modified MOSFET
drain lead, 6mm (0.25 symbol showing the
in.) from package to
internal inductances.
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
VGS = 0V, VDS = 25V
f = 1.0 MHz
see figure 5
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
IS
I SM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
VSD
t rr
Q RR
t on
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
—
—
—
—
28
112
A
Test Conditions
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
Tj = 25°C, I S = 28A, V GS = 0V ➃
Tj = 25°C, IF = 28A, di/dt ≤ 100A/µs
VDD ≤ 50V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + LD.
—
—
—
—
—
—
1.5
400
2.9
V
ns
µC
Thermal Resistance
Parameter
Min. Typ. Max. Units
RthJC
Junction-to-Case
—
—
1.0
RthJ-PCB
Junction-to-PC Board
—
TBD
—
To Order
K/W
Test Conditions
Soldered to a copper clad PC board
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IRFN140 Device
Fig. 2 — Typical Output Characteristics
TC = 150°C
Fig. 1 — Typical Output Characteristics
TC = 25°C
ID = 28A
Fig. 3 — Typical Transfer Characteristics
Fig. 4 — Normalized On-Resistance Vs.Temperature
ID = 28A
Fig. 5 — Typical Capacitance Vs. Drain-to-Source
Voltage
Fig. 6 — Typical Gate Charge Vs. Gate-to-Source
Voltage
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IRFN140 Device
1000
ID , Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10
TC = 25 ° C
TJ = 150 ° C
Single Pulse
1
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig. 7 — Typical Source-to-Drain Diode Forward
Voltage
Fig. 8 — Maximum Safe Operating Area
Fig. 9 — Maximum Drain Current Vs. Case Temperature
Fig. 10b — Switching Time Waveforms
Fig. 10a — Switching Time Test Circuit
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IRFN140 Device
Thermal Response (Z thJC )
10
1
0.50
0.20
P DM
0.10
0.1
t1
0.05
0.02
0.01
0.01
0.00001
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t1 / t2
2. Peak TJ = P DM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration
Fig. 12a — Unclamped Inductive Test Circuit
Fig. 12b — Unclamped Inductive Waveforms
Fig. 12c — Max. Avalanche Energy vs. Current
Fig. 13a — Gate Charge Test Circuit
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IRFN140 Device
➀ Repetitive Rating; Pulse width limited by
➁
➂
➃
➄
maximum junction temperature.
(see figure 11)
@ VDD = 25V, Starting TJ = 25°C,
EAS = [0.5 * L * (IL2) * [BVDSS/(BVDSS-VDD)]
Peak IL = 28A, VGS = 10V, 25 ≤ RG ≤ 200Ω
ISD ≤ 28A, di/dt ≤ 170A/µs,
VDD ≤ BV DSS, TJ ≤ 150°C
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
K/W = °C/W
W/K = W/°C
Fig. 13b — Basic Gate Charge Waveform
Case Outline and Dimensions — SMD-1
All dimensions in millimeters (inches)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
9/96
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