ETC MCT62 High density phototransistor optically coupled isolator Datasheet

MCT6, MCT61, MCT62, MCT66
HIGH DENSITY
PHOTOTRANSISTOR OPTICALLY
COUPLED ISOLATORS
APPROVALS
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UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
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MCT6 VDE 0884 in 3 available lead form : - STD
- G form
- SMD approved to CECC 00802
7.0
6.0
1
8
2
3
7
6
5
4
1.2
10.16
9.16
MCT61, MCT62, MCT66 VDE 0884 approval pending
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Dimensions in mm
2.54
7.62
4.0
3.0
13°
Max
0.5
EN60950 approval pending
3.0
DESCRIPTION
The MCT6, MCT61, MCT62 & MCT66 series
of optically coupled isolators consist of infrared
light emitting diodes and NPN silicon photo
transistors in space efficient dual in line plastic
packages mounted two channels per unit.
FEATURES
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Options :10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High Isolation Voltage (5.3kVRMS ,7.5kVPK )
APPLICATIONS
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Computer terminals
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Industrial systems controllers
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Measuring instruments
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Signal transmission between systems of
different potentials and impedances
OPTION SM
OPTION G
SURFACE MOUNT
7.62
0.5
3.35
0.26
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
50mA
6V
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
Emitter-collector Voltage BVECO
Power Dissipation
30V
6V
150mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail [email protected]
http://www.isocom.com
DB92012m-AAS/A1
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
Input
Output
PARAMETER
MIN TYP MAX UNITS
Forward Voltage (VF)
Reverse Voltage (VR)
Reverse Current (IR)
3
1.50
Collector-emitter Breakdown (BVCEO)
Emitter-collector Breakdown (BVECO)
Collector-emitter Dark Current (ICEO)
Coupled
Output Rise Time, Fall Time tr , tf
Note 1
Note 2
10
V
V
µA
IF = 20mA
IR = 10µA
VR = 3V
100
V
V
nA
IC = 1mA (note 2)
IE = 100µA
VCE = 10V
%
%
%
%
10mA IF , 10V VCE
5mA IF , 5V VCE
5mA IF , 5V VCE
10mA IF , 10V VCE
V
V
VRMS
VPK
Ω
µs
16mA IF , 2mA IC
40mA IF , 2mA IC
See note 1
See note 1
VIO = 500V (note 1)
IC = 2mA, VCC = 10V,
RL = 100Ω (Fig. 1)
IC = 2mA, VCC = 10V,
RL = 1kΩ (Fig. 2)
30
6
Current Transfer Ratio (CTR) (Note 2)
MCT6
20
MCT61
50
MCT62
100
MCT66
6
Collector-emitter Saturation Voltage VCESAT
MCT6,61,62
MCT66
Input to Output Isolation Voltage VISO
5300
Input to Output Isolation Voltage VISO
7500
Input-output Isolation Resistance RISO 5x1010
Output Rise Time, Fall Time tr , tf
2.4
0.4
0.4
µs
15
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
VCC = 10V
INPUT
VCC = 10V
RL = 100Ω
toff
ton
RL = 1kΩ
tr
OUTPUT
FIG 1
7/12/00
TEST CONDITION
OUTPUT
tf
OUTPUT
10%
10%
90%
90%
FIG 2
DB92012m-AAS/A1
Collector Power Dissipation vs. Ambient Temperature
Collector Current vs. Collector-emitter Voltage
TA = 25°C
50
Collector current I C (mA)
Collector power dissipation P C (mW)
200
150
100
50
40
50
30
30
20
15
20
10
10
IF = 5mA
0
0
-30
0
25
50
75
100
0
125
2
4
6
8
10
Collector-emitter voltage VCE ( V )
Ambient temperature TA ( °C )
Forward Current vs. Ambient Temperature
Relative Current Transfer Ratio
vs. Forward Current
60
1.4
Relative current transfer ratio
Forward current I F (mA)
50
40
30
20
10
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0
25
75
100
125
1
5
10
20
Relative Current Transfer Ratio
vs. Ambient Temperature
Collector-emitter Saturation
Voltage vs. Ambient Temperature
(V)
Forward current IF (mA)
1.0
0.5
0
0
25
50
75
Ambient temperature TA ( °C )
100
Collector-emitter saturation voltage V
IF = 10mA
VCE = 10V
-30
2
Ambient temperature TA ( °C )
1.5
Relative current transfer ratio
50
CE(SAT)
-30
7/12/00
VCE = 10V
TA = 25°C
50
0.28
0.24
IF = 16mA
IC = 2mA
0.20
0.16
0.12
0.08
0.04
0
-30
0
25
50
75
100
Ambient temperature TA ( °C )
DB92012m-AAS/A1
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