Fairchild MMBFJ309 N-channel rf amplifier Datasheet

MMBFJ309 / MMBFJ310
N-Channel RF Amplifier
Description
G
This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate
amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz
can be realized. Sourced from process 92. Source &
Drain are interchangeable.
S
SOT-23
D
Note: Source & Drain
are interchangeable
Ordering Information
Part Number
Top Mark
Package
Packing Method
MMBFJ309
6U
SOT-23 3L
Tape and Reel
MMBFJ310
6T
SOT-23 3L
Tape and Reel
Absolute Maximum Ratings(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Value
Unit
VDG
Drain-Gate Voltage
25
V
VGS
Gate-Source Voltage
-25
V
IGF
Forward Gate Current
10
mA
-55 to 150
°C
TJ, TSTG
Parameter
Operating and Storage Junction Temperature Range
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
Thermal Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
RθJA
Parameter
Max.
Unit
Total Device Dissipation
350
mW
Derate Above 25°C
2.8
mW/°C
Thermal Resistance, Junction-to-Ambient
357
°C/W
Note:
3. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2.
© 1997 Fairchild Semiconductor Corporation
MMBFJ309 / MMBFJ310 Rev. 1.5
www.fairchildsemi.com
MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier
January 2015
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
V(BR)GSS Gate-Source Breakdown Voltage IG = -1.0 μA, VDS = 0
IGSS
VGS(off)
Gate Reverse Current
Gate-Source Cut-Off Voltage
-25
V
VGS = -15 V, VDS = 0
VGS = -15 V, VDS = 0, TA = 125°C
VDS = 10 V, ID = 1.0 nA
-1.0
nA
-1.0
μA
MMBFJ309
-1.0
-4.0
MMBFJ310
-2.0
-6.5
MMBFJ309
12
30
MMBFJ310
24
60
V
On Characteristics
IDSS
VGS(f)
Zero-Gate Voltage Drain
Current(4)
VDS = 10 V, VGS = 0
Gate-Source Forward Voltage
VDS = 0, IG = 1.0 mA
1.0
mA
V
Small Signal Characteristics
Re(yis)
Common-Source Input
Conductance
VDS = 10 V, ID = 10 mA, MMBFJ309
f = 100 MHz
MMBFJ310
0.7
Re(yos)
Common-Source Output
Conductance
VDS = 10 V, ID = 10 mA, f = 100 MHz
0.25
mmhos
Gpg
Common-Gate Power Gain
VDS = 10 V, ID = 10 mA, f = 100 MHz
16
dB
Re(yfs)
Common-Source Forward
Transconductance
VDS = 10 V, ID = 10 mA, f = 100 MHz
12
mmhos
Re(yig)
Common-Gate Input
Conductance
VDS = 10 V, ID = 10 mA, f = 100 MHz
12
mmhos
Common-Source Forward
Transconductance
VDS = 10 V, ID = 10 mA, MMBFJ309 10000
f = 1.0 kHz
MMBFJ310 8000
goss
Common-Source Output
Conductance
VDS = 10 V, ID = 10 mA, f = 1.0 kHz
gfg
Common-Gate Forward
Conductance
VDS = 10 V, ID = 10 mA, MMBFJ309
f = 1.0 kHz
MMBFJ310
gog
Common-Gate Output
Conductance
VDS = 10 V, ID = 10 mA, MMBFJ309
f = 1.0 kHz
MMBFJ310
150
Cdg
Drain-Gate Capacitance
VDS = 0, VGS = -10 V, f = 1.0 MHz
2.0
2.5
pF
Csg
Source-Gate Capacitance
VDS = 0, VGS = -10 V, f = 1.0 MHz
4.1
5.0
pF
NF
Noise Figure
VDS = 10 V, ID = 10 mA, f = 450 MHz
3.0
dB
en
Equivalent Short-Circuit Input
Noise Voltage
VDS = 10 V, ID = 10 mA, f = 100 Hz
6.0
nV/ Hz
gfs
mmhos
0.5
20000
18000
150
13000
μmhos
μmhos
μmhos
12000
100
μmhos
Note:
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%
© 1997 Fairchild Semiconductor Corporation
MMBFJ309 / MMBFJ310 Rev. 1.5
www.fairchildsemi.com
2
MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier
Electrical Characteristics
Figure 1. Transfer Characteristics
Figure 2. Transfer Characteristics
Figure 3. Transfer Characteristics
Figure 4. Transfer Characteristics
Figure 5. Input Admittance
Figure 6. Forward Transadmittance
© 1997 Fairchild Semiconductor Corporation
MMBFJ309 / MMBFJ310 Rev. 1.5
www.fairchildsemi.com
3
MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier
Typical Performance Characteristics
Figure 7. Common Drain-Source
Figure 8. Output Conductance vs. Drain Current
Figure 9. Output Admittance
Figure 10. Capacitance vs. Voltage
Figure 11. Noise Voltage vs. Frequency
Figure 12. Reverse Transadmittance
© 1997 Fairchild Semiconductor Corporation
MMBFJ309 / MMBFJ310 Rev. 1.5
www.fairchildsemi.com
4
MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier
Typical Performance Characteristics (Continued)
Figure 14. Transconductance vs. Drain Current
Figure 13. Parameter Interactions
P D - POWER DISSIPATION (mW)
700
600
500
SOT-23
400
300
200
100
Figure 15. Leakage Current vs. Voltage
© 1997 Fairchild Semiconductor Corporation
MMBFJ309 / MMBFJ310 Rev. 1.5
0
0
25
50
75
100
TEMPERATURE ( o C)
125
150
Figure 16. Power Dissipation vs.
Ambient Temperature
www.fairchildsemi.com
5
MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier
Typical Performance Characteristics (Continued)
MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier
Physical Dimensions
0.95
2.92±0.20
3
1.40
1.30+0.20
-0.15
1
2.20
2
0.60
0.37
(0.29)
0.95
0.20
1.00
A B
1.90
1.90
LAND PATTERN
RECOMMENDATION
SEE DETAIL A
1.20 MAX
0.10
0.00
(0.93)
0.10
C
C
2.40±0.30
NOTES: UNLESS OTHERWISE SPECIFIED
GAGE PLANE
0.23
0.08
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
0.25
0.20 MIN
(0.55)
SEATING
PLANE
SCALE: 2X
Figure 17. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE
© 1997 Fairchild Semiconductor Corporation
MMBFJ309 / MMBFJ310 Rev. 1.5
www.fairchildsemi.com
6
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Definition of Terms
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Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I73
© Fairchild Semiconductor Corporation
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