MOTOROLA MRF19060 Rf power field effect transistor Datasheet

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by MRF19060/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier
applications.
• Typical CDMA Performance: 1960 MHz, 26 Volts
IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 7.5 Watts
Power Gain — 12.5 dB
Adjacent Channel Power —
885 kHz: –47 dBc @ 30 kHz BW
1.25 MHz: –55 dBc @ 12.5 kHz BW
2.25 MHz: –55 dBc @ 1 MHz BW
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 60 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch
Reel.
1990 MHz, 60 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465–06, STYLE 1
NI–780
MRF19060R3
CASE 465A–06, STYLE 1
NI–780S
MRF19060SR3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Gate–Source Voltage
VGS
–0.5, +15
Vdc
Total Device Dissipation @ TC ≥ = 25°C
Derate above 25°C
PD
180
1.03
Watts
W/°C
Storage Temperature Range
Tstg
–65 to +150
°C
Operating Junction Temperature
TJ
200
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
RθJC
0.97
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 2002
MRF19060 MRF19060R3 MRF19060SR3
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
6
µAdc
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
gfs
—
4.7
—
S
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 µAdc)
VGS(th)
2
—
4
V
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 500 mAdc)
VGS(Q)
2.5
3.9
4.5
V
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.27
—
V
Crss
—
2.7
—
pF
Two–Tone Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
Gps
11
12.5
—
dB
Two–Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
η
33
36
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
IMD
—
–31
–28
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
IRL
—
–12
—
dB
P1dB
—
60
—
W
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 µAdc)
ON CHARACTERISTICS
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
Pout, 1 dB Compression Point
(VDD = 26 Vdc, Pout = 60 W CW, f = 1990 MHz)
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA,
f = 1930 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
MRF19060 MRF19060R3 MRF19060SR3
2
MOTOROLA RF DEVICE DATA
B2 – B3
C1
C2, C7
C3, C8
C4
C5
C6
C9
C10, C11
C12
R1
R2
R3
R4
Z1
Z2
Z3
Ferrite Beads, Fair Rite, 2743019447
10 µF, 50 V Electrolytic Capacitor, Panasonic #ECEV1HV100R
1000 pF Chip Capacitors, B Case, ATC #100B102JCA500X
0.10 µF Chip Capacitors, B Case, Kemet #CDR33BX104AKWS
5.1 pF Chip Capacitor, B Case, ATC #100B5R1JCA500X
6.2 pF Chip Capacitor, B Case, ATC #100B6R2JCA500X
22 µF, 35 V Tantalum Capacitor, SMT, Sprague
0.8 pF – 8.0 pF Variable Capacitor, Johanson Gigatrim
10 pF Chip Capacitors, B Case, ATC #100B100JCA500X
0.4 pF – 2.5 pF Variable Capacitor, Johanson Gigatrim
1 kΩ, 1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″
560 kΩ, 1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″
15 Ω, 1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″
10 Ω, 1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″
0.580″ x 0.074″ Microstrip
0.100″ x 0.074″ Microstrip
0.384″ x 0.074″ Microstrip
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Board
0.152″ x 0.140″ Microstrip
0.090″ x 0.102″ Microstrip
0.245″ x 0.217″ Microstrip
0.090″ x 0.737″ Microstrip
0.530″ x 0.941″ Microstrip
1.010″ x 0.050″ Microstrip
1.060″ x 0.050″ Microstrip
0.446″ x 1.137″ Microstrip
0.152″ x 0.567″ Microstrip
0.183″ x 0.220″ Microstrip
0.100″ x 0.338″ Microstrip
0.480″ x 0.142″ Microstrip
0.140″ x 0.080″ Microstrip
0.173″ x 0.080″ Microstrip
0.420″ x 0.080″ Microstrip
0.030″ Glass Teflon Arlon
GX–0300–55–22, 2 oz Cu
Figure 1. MRF19060 Test Circuit Schematic
MOTOROLA RF DEVICE DATA
MRF19060 MRF19060R3 MRF19060SR3
3
MRF19060
Figure 2. MRF19060 Test Circuit Component Layout
MRF19060 MRF19060R3 MRF19060SR3
4
MOTOROLA RF DEVICE DATA
5
5 *
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8
8
6
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+ 6 -.
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/01 ' "'$ Figure 7. Power Gain versus Output Power
MOTOROLA RF DEVICE DATA
5
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5
5
4
4
5
4 -.
5
8
4
5
η
>.
4
/01 ' "'$ Figure 6. Intermodulation Products
versus Output Power
4
5
5
Figure 5. Intermodulation Distortion
versus Output Power
5
Figure 4. CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
5 6
5
4 -.
Figure 3. Class AB Broadband Circuit Performance
5 (7
, 6 8 + 6 -. @<::;A %<7?:3
"@<::;A <:(9?(1@$B >. " >.$
4 -. " 4 >.$ 4 -. " -.$
5 6
5
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5 5 5 %&
4
5
5
-
5
5
4
5
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Figure 8. Power Gain and
Intermodulation Distortion versus Supply Voltage
MRF19060 MRF19060R3 MRF19060SR3
5
--*"(7$
η
)*'"($
η!"#$ %& ' "($
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TYPICAL CHARACTERISTICS
+ 6 -.
/6
Ω
?:
-.
+ 6 -.
*D
-.
6
, 6 8 /01 6 ' f
MHz
ZOL*
Ω
Zin
Ω
1930
1.65 + j0.67
1.85 – j0.50
1960
1.64 + j0.45
1.89 – j0.74
1990
1.60 + j0.20
1.96 – j0.94
Zin
= Complex conjugate of source impedance.
ZOL* = Complex conjugate of the optimum load
impedance at a given output power, voltage,
IMD, bias current and frequency.
/1;B
*D 9<& 7@/&;: E<&;( /: 1=<(;/++& E;19;;: 3<?: /01%01
%/9;= (=<?: ;++?7?;:7C <:( ?:1;=8/(0A<1?/: (?&1/=1?/:4
:%01
-<17@?:3
;19/=>
01%01
-<17@?:3
;19/=>
;2?7;
:(;= ;&1
Z
in
Z
*
OL
Figure 9. Series Equivalent Input and Output Impedance
MRF19060 MRF19060R3 MRF19060SR3
6
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
B
G
2X
1
Q
EEE
-
-
B
4 - * ! 4-5 4
4 ** -B 4
4 *
4 - - 4 "4 $ '!
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-
3
B
K
2
(FLANGE)
D
EEE
-
-
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M
EEE
N
R
(INSULATOR)
-
-
-
777
-
-
S
(LID)
777
-
-
-
<<<
-
-
(LID)
-
(INSULATOR)
-
H
C
F
E
T
A
A
SEATING
PLANE
CASE 465–06
ISSUE F
NI–780
MRF19060
(FLANGE)
4X U
(FLANGE)
1
K
2X
2
B
(FLANGE)
D
EEE
-
-
-
N
(LID)
777
M
R
-
-
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777
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-
-
-
<<<
-
-
S
(INSULATOR)
EEE
-
(LID)
-
(INSULATOR)
-
MILLIMETERS
MIN
MAX
4
4 4
4
4 4
4
4
4
4 4
4 4
4
4
4
4
4
4
4
4
4
4
4 4
4 4
4 4 4 !* B
4 4 4 DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
4
4 4
4
4 4 4
4
4
4
4
4
4
4
4 4 4
4
4
4
4
4
4
4
555
4
555
4
4
4 4 MILLIMETERS
MIN
MAX
4
4
4
4
4 4
4
4
4
4 4
4 4
4
4
4
4
4
4
4
4 4
4 4
555
4
555
4
4 4 4 !* B
4 4 4 H
C
3
INCHES
MIN
MAX
4
4
4
4
4 4 4
4
4
4
4
4
4 4
4
4 4 4
4
4
4
4 4 4
4
4
4
4
4 4 B
4 - * ! 4-5 4
4 ** -B 4
4 *
4 - - 4 "4 $ '!
- F !4
4X Z
(LID)
B
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
F
E
A
T
A
(FLANGE)
MOTOROLA RF DEVICE DATA
SEATING
PLANE
CASE 465A–06
ISSUE F
NI–780S
MRF19060SR3
MRF19060 MRF19060R3 MRF19060SR3
7
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
MOTOROLA and the
logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners.
E Motorola, Inc. 2002.
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HOME PAGE: http://www.motorola.com/semiconductors/
MRF19060 MRF19060R3 MRF19060SR3
◊
8
MOTOROLA RF DEVICE MRF19060/D
DATA
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