Central CQ89-2M Surface mount 2 amp silicon triac 600 thru 800 volt Datasheet

CQ89-2M
CQ89-2N
SURFACE MOUNT
2 AMP SILICON TRIAC
600 THRU 800 VOLTS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQ89-2M series
type is an Epoxy Molded Silicon Triac designed for full
wave AC control applications featuring gate triggering
in all four (4) quadrants.
MARKING: FULL PART NUMBER
SOT-89 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=50°C)
Peak One Cycle Surge, t=10ms
I2t Value for Fusing, t=10ms
Peak Gate Power, tp=10μs
Average Gate Power Dissipation
Peak Gate Current, tp=10μs
Peak Gate Voltage, tp=10μs
Operating Junction Temperature
Storage Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VDRM
IT(RMS)
ITSM
CQ89-2M CQ89-2N
600
800
2.0
20
UNITS
V
A
A
I2t
PGM
PG (AV)
IGM
VGM
TJ
Tstg
ΘJA
ΘJC
2.0
3.0
0.2
1.2
8.0
-40 to +125
-40 to +150
180
90
A2s
W
W
A
V
°C
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IDRM
Rated VDRM, RGK=1KΩ
IDRM
Rated VDRM, RGK=1KΩ, TC=125°C
IGT
VD=12V, QUAD I, II, III
IGT
VD=12V, QUAD IV
IH
RGK=1KΩ
VGT
VD=12V, QUAD I, II, III, IV
VTM
ITM=2.0A, tp=380μs
VTM
ITM=3.0A, tp=380μs
2.5
dv/dt
VD=2 /3 VDRM, TC=125°C
TYP
1.35
3.75
1.2
1.1
1.50
1.7
MAX
5.0
200
5.00
8.00
5.0
1.8
1.75
2.0
UNITS
μA
μA
mA
mA
mA
V
V
V
V/μs
R1 (12-February 2010)
CQ89-2M
CQ89-2N
SURFACE MOUNT
2 AMP SILICON TRIAC
600 THRU 800 VOLTS
SOT-89 CASE - MECHANICAL OUTLINE
(Bottom View)
LEAD CODE:
1) Gate
2) MT2
3) MT1
MARKING:
FULL PART NUMBER
R1 (12-February 2010)
w w w. c e n t r a l s e m i . c o m
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