MOTOROLA MCR08BT1 Scr 0.8 ampere rms 200 thru 600 volt Datasheet

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by MCR08BT1/D
SEMICONDUCTOR TECHNICAL DATA
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
*Motorola preferred devices
PNPN devices designed for line powered consumer applications such as relay and
lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and
detection circuits. Supplied in surface mount package for use in automated
manufacturing.
•
•
•
•
•
SCR
0.8 AMPERE RMS
200 thru 600 Volts
Sensitive Gate Trigger Current
Blocking Voltage to 600 Volts
Glass Passivated Surface for Reliability and Uniformity
Surface Mount Package
Devices Supplied on 1 K Reel
CASE 318E-04
(SOT-223)
STYLE 10
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(1/2 Sine Wave, RGK = 1000 Ω, TJ = 25 to 110°C)
Value
VDRM, VRRM
Volts
200
400
600
MCR08BT1
MCR08DT1
MCR08MT1
On-State Current RMS (TC = 80°C)
Unit
IT(RMS)
0.8
Amps
ITSM
10
Amps
I2t
0.4
A2s
PGM
0.1
Watts
PG(AV)
0.01
Watts
TJ
–40 to +110
°C
Tstg
–40 to +150
°C
TL
260
°C
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
PCB Mounted per Figure 1
RθJA
156
°C/W
Thermal Resistance, Junction to Tab
Measured on Anode Tab Adjacent to Epoxy
RθJT
25
°C/W
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TC = 25°C)
Circuit Fusing Considerations (t = 8.3 ms)
Peak Gate Power, Forward, TA = 25°C
Average Gate Power (TC = 80°C, t = 8.3 ms)
Operating Junction Temperature Range
Storage Temperature Range
Maximum Device Temperature for Soldering Purposes (for 10 Seconds Maximum)
THERMAL CHARACTERISTICS
Characteristic
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant source such
that the voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Thyristor Device Data
 Motorola, Inc. 1995
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted, RGK = 1 KΩ)
Characteristic
Symbol
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, RGK = 1000 Ω)
Min
Typ
Max
Unit
—
—
—
—
10
200
µA
µA
IDRM, IRRM
TJ = 25°C
TJ = 110°C
Maximum On-State Voltage (Either Direction)*
(IT = 1.0 A Peak, TA = 25°C)
VTM
—
—
1.7
Volts
Gate Trigger Current (Continuous dc)
(Anode Voltage = 7.0 Vdc, RL = 100 Ω)
IGT
—
—
200
µA
IH
—
—
5.0
mA
Gate Trigger Voltage (Continuous dc)
(Anode Voltage = 7.0 Vdc, RL = 100 Ω)
VGT
—
—
0.8
Volts
Critical Rate-of-Rise of Off State Voltage
(Vpk = Rated VDRM, TC = 110°C, RGK = 1000 Ω, Exponential Method)
dv/dt
10
—
—
V/µs
Holding Current
(VD = 7.0 Vdc,
Initializing Current = 20 mA, RGK = 1000 Ω)
* Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
0.15
3.8
0.079
2.0
0.091
2.3
0.091
2.3
0.244
6.2
0.079
2.0
0.059
1.5
0.984
25.0
0.059
1.5
0.059
1.5
0.096
2.44
0.096
2.44
0.059
1.5
ǒinchesǓ
mm
BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR.
BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL.
MATERIAL: G10 FIBERGLASS BASE EPOXY
0.096
2.44
0.059
1.5
0.472
12.0
Figure 1. PCB for Thermal Impedance and
Power Testing of SOT-223
2
Motorola Thyristor Device Data
1.0
0.1
TYPICAL AT TJ = 110°C
MAX AT TJ = 110°C
MAX AT TJ = 25°C
0.01
1.0
0
2.0
R θJA , JUNCTION TO AMBIENT
THERMAL RESISTANCE, ( °C/W)
10
4.0
3.0
110
100
50 OR 60 Hz HALFWAVE
90
α
α = CONDUCTION
ANGLE
80
dc
70
180°
60
120°
α = 30°
40
60°
0
90°
0.1
0.2
MINIMUM
FOOTPRINT = 0.076 cm2
0
0.4
0.3
3.0
4.0
5.0
6.0
7.0
8.0
9.0
dc
90
180°
80
120°
70
α = 30°
60
60°
50
40
20
0.5
90°
α
CONDUCTION
ANGLE
0
0.1
0.2
0.3
0.4
0.5
Figure 5. Current Derating, 1.0 cm Square Pad
Reference: Ambient Temperature
110
PAD AREA = 4.0 cm2, 50
OR 60 Hz HALFWAVE
T(tab) , MAXIMUM ALLOWABLE
TAB TEMPERATURE ( ° C)
120°
60°
70
90°
α
180°
120°
α = 30°
60°
90°
α
α = CONDUCTION
α = CONDUCTION
ANGLE
ANGLE
0.1
50 OR 60 Hz HALFWAVE
dc
180°
α = 30°
10
1.0 cm2 FOIL, 50 OR
60 Hz HALFWAVE
Figure 4. Current Derating, Minimum Pad Size
Reference: Ambient Temperature
dc
0
2.0
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
90
50
1.0
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
100
60
1 2 3
30 α =
110
80
L
4
Figure 3. Junction to Ambient Thermal
Resistance versus Copper Tab Area
110
20
DEVICE MOUNTED ON
FIGURE 1 AREA = L2
PCB WITH TAB AREA
AS SHOWN
Figure 2. On-State Characteristics
100
50
L
TYPICAL
MAXIMUM
FOIL AREA (cm2)
30
T A , MAXIMUM ALLOWABLE
AMBIENT TEMPERATURE ( °C)
160
150
140
130
120
110
100
90
80
70
60
50
40
30
vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
T A , MAXIMUM ALLOWABLE
AMBIENT TEMPERATURE ( °C)
T A , MAXIMUM ALLOWABLE
AMBIENT TEMPERATURE ( °C)
IT, INSTANTANEOUS ON-STATE CURRENT (AMPS)
0.2
0.3
0.4
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
Figure 6. Current Derating, 2.0 cm Square Pad
Reference: Ambient Temperature
Motorola Thyristor Device Data
0.5
85
0
0.1
0.2
0.3
0.4
0.5
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
Figure 7. Current Derating
Reference: Anode Tab
3
1.0
MAXIMUM AVERAGE POWER
P(AV),DISSIPATION (WATTS)
0.9
α
0.8 α =
0.7
r T , TRANSIENT THERMAL RESISTANCE
NORMALIZED
1.0
α = 30°
CONDUCTION
ANGLE
60°
0.6
90°
0.5
0.4
dc
0.3
180°
0.2
120°
0.1
0
0
0.1
0.2
0.4
0.3
0.1
0.01
0.0001
0.5
0.001
0.5
0.4
–20
0
20
40
60
80
I H , HOLDING CURRENT
(NORMALIZED)
VGT , GATE TRIGGER VOLTAGE (VOLTS)
VAK = 7.0 V
RL = 140 Ω
RGK = 1.0 kΩ
0.6
VAK = 7.0 V
RL = 3.0 k
RGK = 1.0 k
1.0
0
–40
110
–20
0
20
40
60
80
110
TJ, JUNCTION TEMPERATURE, (°C)
Figure 11. Typical Normalized Holding Current
versus Junction Temperature
Figure 10. Typical Gate Trigger Voltage
versus Junction Temperature
1000
I GT , GATE TRIGGER CURRENT ( µA)
0.7
V GT , GATE TRIGGER VOLTAGE (VOLTS)
100
2.0
0.7
TJ, JUNCTION TEMPERATURE, (°C)
0.65
0.6
RGK = 1000 Ω, RESISTOR
CURRENT INCLUDED
100
0.55
0.5
VAK = 7.0 V
RL = 140 Ω
TJ = 25°C
0.45
0.4
0.35
1.0
10
100
IGT, GATE TRIGGER CURRENT (µA)
Figure 12. Typical Range of VGT
versus Measured IGT
4
10
Figure 9. Thermal Response Device
Mounted on Figure 1 Printed Circuit Board
Figure 8. Power Dissipation
0.3
0.1
1.0
t, TIME (SECONDS)
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
0.3
–40
0.1
0.01
1000
VAK = 7.0 V
RL = 140 Ω
WITHOUT GATE RESISTOR
10
1.0
–40
–20
0
20
40
60
80
110
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. Typical Gate Trigger Current
versus Junction Temperature
Motorola Thyristor Device Data
10000
100
TJ = 25°C
IGT = 48 µA
10
Vpk = 400 V
1000
STATIC dv/dt (V/ µS)
IH , HOLDING CURRENT (mA)
5000
IGT = 7 µA
1.0
500
100
TJ = 25°
50
10
125°
5.0
50°
110°
1.0
75°
0.5
0.1
1.0
10
100
1000
10,000
0.1
10
100
1000
10,000
100,000
RGK, GATE-CATHODE RESISTANCE (OHMS)
Figure 14. Holding Current Range versus
Gate-Cathode Resistance
Figure 15. Exponential Static dv/dt versus Junction
Temperature and Gate-Cathode Termination Resistance
10000
300 V
1000
TJ = 110°C
1000
200 V
500
100,000
RGK, GATE-CATHODE RESISTANCE (OHMS)
10000
100 V
TJ = 110°C
400 V (PEAK)
500
400 V
100
STATIC dv/dt (V/ µS)
STATIC dv/dt (V/ µS)
50 V
50
500 V
10
5.0
100
RGK = 100
50
10
RGK = 1.0 k
5.0
1.0
10
100
1000
10,000
RGK = 10 k
1.0
0.01
0.1
1.0
10
RGK, GATE-CATHODE RESISTANCE (OHMS)
CGK, GATE-CATHODE CAPACITANCE (nF)
Figure 16. Exponential Static dv/dt versus Peak
Voltage and Gate-Cathode Termination Resistance
Figure 17. Exponential Static dv/dt versus
Gate-Cathode Capacitance and Resistance
100
10000
1000
STATIC dv/dt (V/ µS)
500
100
50
IGT = 70 µA
10
IGT = 5 µA
IGT = 35 µA
5.0
1.0
10
100
IGT = 15 µA
1000
10,000
100,000
GATE-CATHODE RESISTANCE (OHMS)
Figure 18. Exponential Static dv/dt versus
Gate-Cathode Termination Resistance and
Product Trigger Current Sensitivity
Motorola Thyristor Device Data
5
PACKAGE DIMENSIONS
A
F
STYLE 10:
PIN 1.
2.
3.
4.
4
S
B
1
2
3
NOTES:
2 DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
3 CONTROLLING DIMENSION: INCH.
CATHODE
ANODE
GATE
ANODE
D
L
G
J
C
0.08 (0003)
M
H
INCHES
DIM MIN
MAX
A
0.249
0.263
B
0.130
0.145
C
0.060
0.068
D
0.024
0.035
F
0.115
0.126
G
0.087
0.094
H 0.0008 0.0040
J
0.009
0.014
K
0.060
0.078
L
0.033
0.041
M
0_
10 _
S
0.264
0.287
MILLIMETERS
MIN
MAX
6.30
6.70
3.30
3.70
1.50
1.75
0.60
0.89
2.90
3.20
2.20
2.40
0.020
0.100
0.24
0.35
1.50
2.00
0.85
1.05
0_
10 _
6.70
7.30
K
CASE 318E-04
(SOT–223)
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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6
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Motorola Thyristor Device Data
*MCR08BT1/D*
MCR08BT1/D
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