Hanbit HMF2M32M8A Flash-rom module 8mbyte (2m x 32-bit), 72pin-simm, 5v Datasheet

HANBit
HMF2M32M8A
FLASH-ROM MODULE 8MByte (2M x 32-Bit), 72pin-SIMM, 5V
Part No. HMF2M32M8A
GENERAL DESCRIPTION
The HMF2M32M8A is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a
x32bit configuration. The module consists of eight 1M x 8 FROM mounted on a 72 -pin, double-sided, FR4-printed circuit
board.
The HMF2M32M8A is entirely pin and command set compatible with JEDEC standard 4M -bit EEPROMs. Commands are
written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the
device is similar to reading from 12.0V flash or EPROM devices.
Eight chip enable inputs, (/1CSLL, /2CSLL, /1CSLH, /2CSLH, /1CSHL, /2CSHL, /1CSHH, /2CSHH ) are used to enable the
module’s 4 bytes independently. Output enable (/OE) and write enable (/WE) can set the memory input and output.
When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power
design. All module components may be powered from a single +5V DC power supply and all inputs
and outputs are TTL-compatible.
PIN ASSIGNMENT
FEATURES
PIN
SYMBOL
PIN
SYMBOL
PIN
SYMBOL
w Access time : 75, 90 and 120ns
1
Vss
25
D17
49
/WE
w High-density 8MByte design
2
NC
26
D18
50
A20
w High-reliability, low-power design
3
D0
27
D19
51
A19
4
D1
28
D20
52
A18
5
D2
29
D21
53
A17
w Easy memory expansion
6
D3
30
Vcc
54
A16
w All inputs and outputs are TTL-compatible
7
D4
31
D22
55
A15
w FR4-PCB design
8
D5
32
D23
56
A14
w Low profile 72-pin SIMM
9
D6
33
/1CSHL
57
A13
10
VCC
34
/2CSHL
58
A12
11
D7
35
D24
59
Vcc
w Sectors erase architecture
12
/1CSLL
36
D25
60
A11
w Sector group protection
13
/2CSLL
37
D26
61
A10
w Temporary sector group unprotection
14
D8
38
D27
62
A9
15
D9
39
Vss
63
A8
16
D10
40
D28
64
A7
17
D11
41
D29
65
A6
18
D12
42
D30
66
A5
19
D13
43
D31
67
A4
20
D14
44
/1CSHH
68
A3
21
D15
45
/2CSHH
69
A2
22
/1CSLH
46
VCC
70
A21
23
/2CSLH
47
/RESET
71
A22
24
D16
48
/OE
72
Vss
w Single + 5V ± 0.5V power supply
w Minimum 1,000,000 write/erase cycle
w The used device is Am29F080B
OPTIONS
MARKING
w Timing
75ns access
- 75
90ns access
- 90
120ns access
-120
w Packages
72-pin SIMM
URL: www.hbe.co.kr
REV.02(August,2002)
M
72-PIN SIMM
TOP VIEW
1
HANBit Electronics Co., Ltd.
HANBit
HMF2M32M8A
FUNCTIONAL BLOCK DIAGRAM
D DQ
0-D31
0-31
D32
A2-A22
A21
A0-19
A0-20
A0-20
D0-7
D0-7
/WE
/WE
U1
/OE
U5
/OE
/CE
/CE
/2CSLL
/1CSLL
A0-20
A0-20
D8-15
D8-15
/WE
/WE
U2
/OE
U6
/OE
/CE
/CE
/1CSLH
/2CSLH
A0-20
A0-20
D16-23
D16-23
/WE
/WE
U3
/OE
/CE
/CE
/1CSHL
/2CSHL
A0-20
A0-20
D24-31
/WE
/WE
/OE
U7
/OE
/OE
D24-31
/WE
U4
/WE
/OE
/OE
U8
/CE
/CE
/1CSHH
/2CSHH
TRUTH TABLE
MODE
/OE
/CE
/WE
DQ
POWER
STANDBY
X
H
X
HIGH-Z
STANDBY
NOT SELECTED
H
L
H
HIGH-Z
ACTIVE
READ
L
L
H
Q
ACTIVE
WRITE or ERASE
X
L
L
D
ACTIVE
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REV.02(August,2002)
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HANBit Electronics Co., Ltd.
HANBit
HMF2M32M8A
NOTE: X means don’t care
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
VIN,OUT
-2.0V to +7.0V
Voltage with respect to ground Vcc
VCC
-2.0V to +7.0V
Storage Temperature
TSTG
-65oC to +125oC
Voltage with respect to ground all other pins
Operating Temperature
TA
-55oC to +125 oC
w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and fu nctional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
SYMBOL
MIN
TYP.
MAX
Vcc for ±5% device Supply Voltages
VCC
4.75V
5.25V
Vcc for ± 10% device Supply Voltages
Vcc
4.5V
5.5V
Ground
VSS
0
0
0
DC AND OPERATING CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V )
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
MAX
UNITS
IL1
±8.0
µA
IL0
±8.0
µA
Vcc=Vcc max, V IN= GND to
Input Leakage Current
Vcc
Vcc=Vcc max, VOUT= GND to
Output Leakage Current
Vcc
Output High Voltage
IOH = -2.5mA, Vcc = Vcc min
VOH
0.85x Vcc
V
Output Low Voltage
IOL = 12mA, Vcc =Vcc min
VOL
0.45
V
Vcc Active Current for
/CE = VIL, /OE=VIH,
ICC1
320
mA
/CE = VIL, /OE=VIH
ICC2
320
mA
/CE= VIH
ICC3
40
µA
4.2
V
Read(1)
Vcc Active Current for
Program
or Erase(2)
Vcc Standby Current
Low Vcc Lock-Out Voltage
VLKO
3.2
Notes:
1. The Icc current listed is typically less than 2mA/MHz, with /OE at V IH.
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HMF2M32M8A
2. Icc active while embedded algorithm (program or erase) is in progress
3. Maximum Icc current specifications are tested with Vcc=Vcc max
ERASE AND PROGRAMMING PERFORMANCE
LIMITS
PARAMETER
UNIT
MIN.
TYP.
COMMENTS
MAX.
Excludes 00H programming
Sector Erase Time
-
1
8
sec
prior to erasure
Byte Programming Time
-
7
300
µs
Excludes system-level overhead
Chip Programming Time
-
7.2
21.6
sec
Excludes system-level overhead
CAPACITANCE
PARAMETER
PARAMETER
SYMBOL
DESCRIPTION
CIN
TEST SETUP
MIN
MAX
UNIT
VIN = 0
6
7.5
pF
VOUT = 0
8.5
12
pF
VIN = 0
7.5
9
pF
TEST SETUP
-75
-90
-120
UNIT
Min
70
90
120
ns
Max
70
90
120
ns
Max
70
90
120
ns
Input Capacitance
COUT
Output Capacitance
CIN2
Control Pin Capacitance
o
Notes : Test conditions TA = 25 C, f=1.0 MHz.
AC CHARACTERISTICS
u Read Only Operations Characteristics
PARAMETER
SYMBOLS
DESCRIPTION
JEDEC
STANDAR
D
tAVAV
tRC
tAVQV
tACC
Read Cycle Time
/CE = V IL
Address to Output Delay
/OE = V IL
tELQV
tCE
Chip Enable to Output Delay
/OE = V IL
tGLQV
tOE
Chip Enable to Output Delay
Max
40
40
50
ns
tEHQZ
tDF
Chip Enable to Output High-Z
Max
20
20
30
ns
tGHQZ
tDF
Output Enable to Output High-Z
Max
20
20
30
ns
Min
0
0
0
ns
Output Hold Time From
Addresses,
tAXQX
tQH
/CE or /OE, Whichever Occurs
First
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REV.02(August,2002)
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HMF2M32M8A
TEST SPECIFICATIONS
TEST CONDITION
75
ALL OTHERS
UNIT
Output load
Output load capacitance,
CL (Including jig capacitance)
1TTL gate
30
100
pF
Input rise and full times
5
20
ns
0.0 - 3.0
0.45-2.4
V
Input timing measurement reference levels
1.5
0.8, 2.0
V
Output timing measurement reference levels
1.5
0.8, 2.0
V
Input pulse levels
5.0V
2.7kΩ
IN3064
or Equivalent
Device
Under
CL
6.2kΩ
Diodes = IN3064
or Equivalent
Note : CL = 100pF including jig capacitance
u Erase/Program Operations
PARAMETER SYMBOLS
JEDEC
STANDARD
DESCRIPTION
-75
-90
-120
UNIT
70
90
120
ns
tAVAV
tWC
Write Cycle Time
Min
tAVWL
tAS
Address Setup Time
Min
tWLAX
tAH
Address Hold Time
Min
40
45
50
ns
tDVWH
tDS
Data Setup Time
Min
40
45
50
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
Read Recover Time Before Write
Min
0
ns
0
ns
tGHWL
tGHWL
tELWL
tCS
/CE Setup Time
Min
0
ns
tWHEH
tCH
/CE Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
tWHWL
tWPH
Write Pulse Width High
Min
20
ns
tWHWH1
tWHWH1
Byte Programming Operation
Typ
7
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note1)
Typ
1
sec
Vcc set up time
Min
50
µs
tVCS
40
45
50
ns
Notes : 1. This does not include the preprogramming time
2. This timing is only for Sector Protect operations
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REV.02(August,2002)
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HANBit Electronics Co., Ltd.
HANBit
HMF2M32M8A
u Erase/Program Operations
Alternate /CE Controlled Writes
PARAMETER
SYMBOLS
DESCRIPTION
-75
-90
-120
UNIT
70
90
120
ns
JEDEC
STANDARD
tAVAV
tWC
Write Cycle Time
Min
tAVWL
tAS
Address Setup Time
Min
tWLAX
tAH
Address Hold Time
Min
40
45
50
ns
tDVWH
tDS
Data Setup Time
Min
40
45
50
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tGHEL
tGHEL
Read Recover Time Before Write
Min
0
ns
tWLEL
tWS
/CE Setup Time
Min
0
ns
tEHWH
tWH
/CE Hold Time
Min
0
ns
tELEH
tCP
Write Pulse Width
Min
tEHEL
tCPH
Write Pulse Width High
Min
20
ns
tWHWH1
tWHWH1
Byte Programming Operation
Typ
7
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note1)
Typ
1
sec
0
40
45
ns
50
ns
Notes :
1. This does not include the preprogramming time
2. This timing is only for Sector Protect operations
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REV.02(August,2002)
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HMF2M32M8A
u READ OPERATIONS TIMING
u RESET TIMING
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HMF2M32M8A
u PROGRAM OPERATIONS TIMING
u CHIP/SECTOR ERASE OPERATION TIMINGS
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HMF2M32M8A
u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS)
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REV.02(August,2002)
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HMF2M32M8A
u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS
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HMF2M32M8A
PACKAGE DIMENSIONS
(Front-Side)
(Rear-Side)
2.54 mm
0.25 mm MAX
MIN
Gold: 1.04±0.10 mm
1.27
Solder: 0.914±0.10 mm
1.27±0.08
(Solder & Gold Plating)
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REV.02(August,2002)
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HANBit Electronics Co., Ltd.
HANBit
HMF2M32M8A
ORDERING INFORMATION
Part Number
Density
Org.
Package
HMF2M32M8A-75
8MByte
2M×32bit
72Pin-SIMM
HMF2M32M8A-90
8MByte
2M×32bit
HMF2M32M8A-120
8MByte
2M×32bit
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REV.02(August,2002)
Component
Vcc
SPEED
8EA
5.0V
75ns
72Pin-SIMM
8EA
5.0V
90ns
72Pin-SIMM
8EA
5.0V
120ns
12
Number
HANBit Electronics Co., Ltd.
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