Microsemi APTGT600A60G Phase leg trench field stop igbt power module Datasheet

APTGT600A60G
Phase leg
Trench + Field Stop IGBT®
Power Module
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
VBUS
Q1
G1
E1
OUT
Q2
G2
E2
0/VBUS
G1
VBUS
0/VBUS
VCES = 600V
IC = 600A* @ Tc = 80°C
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
OUT
E1
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
E2
G2
Absolute maximum ratings
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
TC = 25°C
Reverse Bias Safe Operating Area
Tj = 150°C
1200A @ 550V
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
December, 2007
IC
Max ratings
600
700 *
600 *
800
±20
2300
RBSOA
Parameter
Collector - Emitter Breakdown Voltage
V
W
* Specification of IGBT device but output current must be limited to 500A to not exceed a delta of temperature greater
than 100°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5
APTGT600A60G – Rev 2
Symbol
VCES
APTGT600A60G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
Min
VGE = 0V, VCE = 600V
Tj = 25°C
VGE =15V
IC = 600A
Tj = 150°C
VGE = VCE , IC = 2mA
VGE = 20V, VCE = 0V
5.0
Typ
1.4
1.5
5.8
Max
Unit
750
1.8
µA
6.5
800
V
nA
Max
Unit
V
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 600A
RG = 1Ω
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 600A
RG = 1Ω
Tj = 25°C
VGE = ±15V
Tj = 150°C
VBus = 300V
IC = 600A
Tj = 25°C
RG = 1Ω
Tj = 150°C
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
Min
Typ
49
3.1
1.5
130
55
250
nF
ns
60
145
60
320
ns
80
3
5.5
17
21
mJ
mJ
Reverse diode ratings and characteristics
Maximum Reverse Leakage Current
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VR=600V
IF = 600A
VGE = 0V
IF = 600A
VR = 300V
di/dt =5000A/µs
Er
Reverse Recovery Energy
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Min
600
Typ
Tj = 25°C
Tj = 150°C
Tc = 80°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
600
1.5
1.4
120
210
27
Tj = 150°C
Tj = 25°C
Tj = 150°C
57
6.9
14.1
Max
350
550
Unit
V
µA
A
1.9
V
ns
December, 2007
IRM
Test Conditions
µC
mJ
2-5
APTGT600A60G – Rev 2
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
APTGT600A60G
Thermal and package characteristics
Symbol Characteristic
Min
IGBT
Diode
RthJC
Junction to Case Thermal Resistance
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
To heatsink
For terminals
M6
M5
2500
-40
-40
-40
3
2
Typ
Max
0.065
0.11
Unit
°C/W
V
175
125
100
5
3.5
280
°C
N.m
g
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
www.microsemi.com
3-5
APTGT600A60G – Rev 2
December, 2007
SP6 Package outline (dimensions in mm)
APTGT600A60G
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
1200
1200
1000
VGE=13V
VGE=19V
TJ=125°C
800
800
TJ=150°C
IC (A)
IC (A)
TJ = 150°C
TJ=25°C
1000
600
VGE=15V
600
VGE=9V
400
400
200
200
TJ=25°C
0
0
0
0.5
1
1.5
VCE (V)
2
0
2.5
40
TJ=25°C
30
E (mJ)
IC (A)
800
TJ=125°C
400
TJ=150°C
25
Eoff
Er
15
Eon
5
6
7
8
9
10
0
11
200
400
600
800
1000 1200
IC (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
1400
VCE = 300V
VGE =15V
IC = 600A
TJ = 150°C
Eoff
1200
Eon
1000
IC (A)
E (mJ)
3.5
0
5
30
3
20
0
40
2.5
10
TJ=25°C
200
1.5
2
VCE (V)
VCE = 300V
VGE = 15V
RG = 1Ω
TJ = 150°C
35
1000
600
1
Energy losses vs Collector Current
Transfert Characteristics
1200
0.5
20
10
800
600
400
Er
VGE=15V
TJ=150°C
RG=1Ω
200
Eon
0
0
0
1
2
3
4
5
Gate Resistance (ohms)
6
0
100 200 300 400 500 600 700
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.05
0.7
0.04
0.5
0.03
IGBT
December, 2007
0.06
0.3
0.02
0.01
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
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4-5
APTGT600A60G – Rev 2
Thermal Impedance (°C/W)
0.07
APTGT600A60G
Forward Characteristic of diode
1200
100
VCE=300V
D=50%
RG=1Ω
TJ=150°C
ZVS
80
ZCS
1000
800
Tc=85°C
IF (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
120
60
600
TJ=125°C
400
40
Hard
switching
20
TJ=150°C
TJ=25°C
200
0
0
0
200
400
600
IC (A)
800
0
1000
0.4
0.8
1.2
VF (V)
1.6
2
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.12
0.1
0.08
0.06
0.04
0.02
Diode
0.9
0.7
0.5
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
December, 2007
Rectangular Pulse Duration in Seconds
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGT600A60G – Rev 2
Microsemi reserves the right to change, without notice, the specifications and information contained herein
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