Pan Jit MMBFJ309 J-fet high frequency amplifier transistor Datasheet

MMBFJ309 / MMBFJ310
J-FET HIGH FREQUENCY
AMPLIFIER TRANSISTOR
1
D
N-CHANNEL
3
For VHF/UHF Applications
G
S
2
1
2
3
DEVICE MARKING
MMBFJ309 = B9J; MMBFJ310 = B1J
SOT-23
Note: Drain and Source are
interchangeable.
ELECTRICAL RATINGS
Rating
Symbol
Value
Units
Drain to Source Voltage
V DS
25
V
Gate to Source Voltage
V GS
25
V
IG
10
mAdc
Gate Current
THERMAL RATINGS
Symbol
Value
Units
Pd
225
mW
R JA
556
°C/W
Operating Temperature Range
TJ
-55 to +150
°C
Storage Temperature Range
Tstg
-55 to +150
°C
Rating
Power Dissipation (Note 1)
Thermal Resistance - Junction to Ambient (Note 1)
Note 1: Device mounted on FR-5 board 1.0 x 0.75 x 0.062 in. with recommended minimum pad layout
9/19/2005
Page
1
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MMBFJ309 / MMBFJ310
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Min
Typical
Max
Units
-25
-
-
V
-
-
-1.0
nA
VGS = -15Vdc TJ =125°C
-
-
-1.0
µA
VDS = 10Vdc
I DS = 1.0nAdc
-1.0
-
-4.0
V
-2.0
-
-6.5
V
Conditions
Min
Typical
Max
Units
VDS = 10Vdc
VGS = 0Vdc
12
-
30
mA
24
-
60
mA
VGS(f)
I G = 1.0 mA, VDS = 0
-
-
1.0
V
Symbol
Conditions
Min
Typical
Max
Units
8.0
-
18
mmhos
-
-
250
µmhos
-
-
5.0
pF
-
-
2.5
pF
-
10
-
nV / Hz
Symbol
Gate-Source Breakdown Voltage
V(BR)GSS
Gate Reverse Current
I GSS
Conditions
I G = -1.0 µA, VDS = 0
VGS = -15Vdc
Gate-Source Cutoff Voltage
MMBFJ309
VGS (off)
MMBFJ310
ON CHARACTERISTICS
Parameter
Symbol
Zero Gate Current Drain Current
I DSS
MMBFJ309
MMBFJ310
Gate-Source Forward Voltage
SMALL-SIGNAL CHARACTERISTICS
Parameter
Forward Transfer Admittance
Yfs
Output Admittance
y os
Input Capacitance
C iss
Reverse Transfer Capacitance
C rss
Equivalent Short-Circuit Input Noise
Voltage
9/19/2005
en
I D = 10 mA, VDS = 10 V
f = 1.0 kHz
I D = 10 mA, VDS = 10 V
f = 1.0 kHz
V GS = -10V, VDS = 0V
f = 1.0 MHz
V GS = -10V, VDS = 0V
f = 1.0 MHz
I D = 10 mA, VDS = 10 V
f = 100 Hz
Page 2
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MMBFJ309 / MMBFJ310
PACKAGE DIMENSIONS AND SUGGESTED PAD LAYOUT
9/19/2005
Page 3
www.panjit.com
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