Vishay BAS285 Small signal schottky diode Datasheet

BAS285
Vishay Semiconductors
Small Signal Schottky Diode
Features
• Integrated protection ring against static
discharge
e2
• Very low forward voltage
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
9612009
Applications
• Applications where a very low forward voltage is
required
Mechanical Data
Case: QuadroMELF Glass case SOD80
Weight: approx. 34 mg
Cathode Band Color: Black
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Part
Type differentiation
VR = 30 V
BAS285
Ordering code
Remarks
BAS285-GS18 or BAS285-GS08
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
Symbol
Value
VR
30
Unit
V
Peak forward surge current
tp = 10 ms
IFSM
5
A
Repetitive peak forward current
tp ≤ 1 s
IFRM
300
mA
IF
200
mA
IFAV
200
mA
Symbol
Value
Unit
RthJA
320
K/W
Tj
125
°C
Tstg
- 65 to + 150
°C
Forward current
Average forward current
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Junction to ambient air
Junction temperature
Storage temperature range
Document Number 85501
Rev. 1.7, 17-Mar-06
Test condition
on PC board
50 mm x 50 mm x 1.6 mm
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BAS285
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
Max
Unit
IF = 0.1 mA
Symbol
VF
Min
Typ.
240
mV
IF = 1 mA
VF
320
mV
IF = 10 mA
VF
400
mV
IF = 30 mA
VF
500
mV
IF = 100 mA
VF
800
mV
Reverse current
VR = 25 V, tp = 300 µs
IR
2.3
µA
Diode capacitance
VR = 1 V, f = 1 MHz
CD
10
pF
Typical Characteristics
200
1000
VR = 30 V
180
Tj = 150 °C
160
140
IF - Forward Current (A)
PR - Reverse Power Dissipation (mW)
Tamb = 25 °C, unless otherwise specified
RthJA = 540 kW
120
PR - Limit
at 100 % VR
100
80
PR - Limit
at 80 % VR
60
40
100
Tj = 25 °C
10
1
20
0.1
0
25
50
75
100
125
Tj - Junction Temperature (°C)
15822
0
150
Figure 1. Max. Reverse Power Dissipation vs. Junction
Temperature
1.0
1.5
Figure 3. Forward Current vs. Forward Voltage
1000
10
CD - Diode Capacitance (pF)
IR - Reverse Current (µA)
0.5
VF - Forward Voltage (V)
15824
VR = VRRM
100
10
f = 1 MHz
9
8
7
6
5
4
3
2
1
0
1
25
15823
50
75
100
125
Tj - Junction Temperature (°C)
Figure 2. Reverse Current vs. Junction Temperature
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2
0.1
150
15825
1
10
100
VR - Reverse Voltage (V)
Figure 4. Diode Capacitance vs. Reverse Voltage
Document Number 85501
Rev. 1.7, 17-Mar-06
BAS285
Vishay Semiconductors
Package Dimensions in mm (Inches)
12071
Document Number 85501
Rev. 1.7, 17-Mar-06
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BAS285
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 85501
Rev. 1.7, 17-Mar-06
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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