ON MAC12SM Sensitive gate triacs silicon bidirectional thyristor Datasheet

MAC12SM, MAC12SN
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed for industrial and consumer applications for full wave
control of AC loads such as appliance controls, heater controls, motor
controls, and other power switching applications.
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Features
TRIACS
12 AMPERES RMS
600 thru 800 VOLTS
• Sensitive Gate Allows Triggering by Microcontrollers and other
•
•
•
•
•
•
•
•
•
•
Logic Circuits
Blocking Voltage to 800 Volts
On-State Current Rating of 12 Amperes RMS at 70°C
High Surge Current Capability − 90 Amperes
Rugged, Economical TO−220AB Package
Glass Passivated Junctions for Reliability and Uniformity
Maximum Values of IGT, VGT and IH Specified for Ease of Design
High Commutating di/dt − 8.0 A/ms Minimum at 110°C
Immunity to dV/dt − 15 V/msec Minimum at 110°C
Operational in Three Quadrants: Q1, Q2, and Q3
Pb−Free Packages are Available*
MT2
MT1
G
MARKING
DIAGRAM
MAC12SxG
AYWW
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 110°C, Sine Wave,
50 to 60 Hz, Gate Open)
MAC12SM
MAC12SN
VDRM,
VRRM
On-State RMS Current
(All Conduction Angles; TC = 70°C)
IT(RMS)
12
A
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TJ = 110°C)
ITSM
90
A
I2t
33
A2sec
PGM
16
W
Circuit Fusing Consideration (t = 8.33 ms)
Peak Gate Power
(Pulse Width = 1.0 msec, TC = 70°C)
Average Gate Power
(t = 8.3 msec, TC = 70°C)
V
PG(AV)
0.35
W
TJ
−40 to 110
°C
Storage Temperature Range
Tstg
−40 to 150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. (VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
December, 2005 − Rev. 3
1
2
3
600
800
Operating Junction Temperature Range
© Semiconductor Components Industries, LLC, 2005
TO−220AB
CASE 221A−09
STYLE 4
Unit
1
x
A
Y
WW
G
= M, or N
= Assembly Location
= Year
= Work Week
= Pb−Free Package
PIN ASSIGNMENT
1
Main Terminal 1
2
Main Terminal 2
3
Gate
4
Main Terminal 2
ORDERING INFORMATION
Device
Package
Shipping
MAC12SM
TO−220AB
50 Units / Rail
MAC12SMG
TO−220AB
(Pb−Free)
50 Units / Rail
MAC12SN
TO−220AB
50 Units / Rail
MAC12SNG
TO−220AB
(Pb−Free)
50 Units / Rail
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MAC12SM/D
MAC12SM, MAC12SN
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient
Symbol
Value
Unit
RqJC
RqJA
2.2
62.5
°C/W
TL
260
°C
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
−
−
−
−
0.01
2.0
−
−
1.85
−
−
−
1.5
2.5
2.7
5.0
5.0
5.0
−
2.5
10
−
−
−
3.0
5.0
3.0
15
20
15
0.45
0.45
0.45
0.68
0.62
0.67
1.5
1.5
1.5
(di/dt)c
8.0
10
−
A/ms
Critical Rate of Rise of Off-State Voltage
(VD = 67% VDRM, Exponential Waveform, RGK = 1 KW, TJ = 110°C)
dV/dt
15
40
−
V/ms
Repetitive Critical Rate of Rise of On-State Current
IPK = 50 A; PW = 40 msec; diG/dt = 1 A/msec; Igt = 100 mA; f = 60 Hz
di/dt
−
−
10
A/ms
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
IDRM,
IRRM
TJ = 25°C
TJ = 110°C
mA
ON CHARACTERISTICS
Peak On-State Voltage (Note 2)
(ITM = ± 17 A)
VTM
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IGT
Holding Current
(VD = 12 V, Gate Open, Initiating Current = ±200 mA)
IH
Latching Current (VD = 12 V, IG = 5 mA)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IL
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
V
mA
mA
mA
VGT
V
DYNAMIC CHARACTERISTICS
Critical Rate of Change of Commutating Current
(VD = 400 V, ITM = 3.5 A, Commutating dV/dt = 10 V/ms, Gate Open, TJ = 110°C,
f = 500 Hz, Snubber: Cs = 0.01 mf, Rs = 15 W)
2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Symbol
Parameter
VDRM
Peak Repetitive Forward Off State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off State Voltage
IRRM
Peak Reverse Blocking Current
VTM
Maximum On State Voltage
IH
Holding Current
VTM
Quadrant 1
MainTerminal 2 +
on state
IH
IRRM at VRRM
off state
IH
Quadrant 3
MainTerminal 2 −
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2
VTM
+ Voltage
IDRM at VDRM
MAC12SM, MAC12SN
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
Quadrant II
(+) MT2
(−) IGT
GATE
Quadrant I
(+) IGT
GATE
MT1
MT1
REF
REF
IGT −
+ IGT
(−) MT2
Quadrant III
(−) MT2
Quadrant IV
(+) IGT
GATE
(−) IGT
GATE
MT1
MT1
REF
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
0.90
VGT, GATE TRIGGER VOLTAGE (VOLTS)
IGT, GATE TRIGGER CURRENT (mA)
100
Q2
10
Q3
Q1
1
0.1
−40 −25 −10
5
20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95
110
Q1
0.85
0.80 Q3
0.75
0.70
Q2
0.65
0.60
0.55
0.50
0.45
0.40
−40 −25 −10
5
20 35
50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95 110
Figure 2. Typical Gate Trigger Voltage
versus Junction Temperature
Figure 1. Typical Gate Trigger Current
versus Junction Temperature
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3
MAC12SM, MAC12SN
100
IH, HOLDING CURRENT (mA)
IL , LATCHING CURRENT (mA)
100
Q1
10
Q2
Q3
1
0.1
−40 −25 −10
5
20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95
P(AV), AVERAGE POWER DISSIPATION (WATTS)
TC , CASE TEMPERATURE (°C)
110
100
30°, 60°
90
90°
80
180°
70
DC
0
2
4
6
8
10
IT(RMS), RMS ON-STATE CURRENT (AMPS)
MT2 Positive
1
MT2 Negative
0.1
−40 −25 −10
5
20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
110
Figure 3. Typical Latching Current
versus Junction Temperature
60
10
12
Figure 4. Typical Holding Current
versus Junction Temperature
25
DC
20
180°
120°
90°
15
60°
10
30°
5
0
0
IT, INSTANTANEOUS ON-STATE CURRENT (AMPS)
Typical @ TJ = 25°C
Maximum @ TJ = 110°C
Maximum @ TJ = 25°C
10
1
2
4
6
8
10
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
12
Figure 6. On-State Power Dissipation
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
Figure 5. Typical RMS Current Derating
100
95 110
1
0.1
0.01
0.1
1
10
100
t, TIME (ms)
1000
Figure 8. Typical Thermal Response
0.1
0.5
1.5
2.5
3.5
4.5
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 7. Typical On-State Characteristics
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4
10000
MAC12SM, MAC12SN
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−09
ISSUE AA
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−− 0.080
STYLE 4:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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MAC12SM/D
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