Pan Jit BSS8402DWT/R7-R Complimentary pair enhancement mode mosfet Datasheet

BSS8402DW
COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS
This space-efficient device contains an electrically-isolated complimentary pair
of enhancement-mode MOSFETs (one N-channel and one P-channel). It
comes in a very small SOT-363 (SC70-6L) package. This device is ideal for
portable applications where board space is at a premium.
SOT- 363
4
FEATURES
5
Complimentary Pairs
6
3
Low On-Resistance
2
Low Gate Threshold Voltage
1
Fast Switching
Available in lead-free plating (100% matte tin finish)
6
5
4
APPLICATIONS
Q1
Switching Power Supplies
Q2
Hand-Held Computers, PDAs
MARKING CODE: S82
MAXIMUM RATINGS - TOTAL DEVICE
1
2
3
TJ = 25°C Unless otherwise noted
Rating
Total Power Dissipation (Note 1)
Operating Junction and Storage Temperature Range
MAXIMUM RATINGS N - CHANNEL - Q1 , 2N7002
Rating
Symbol
Value
Units
PD
200
mW
TJ, T stg
-55 to +150
°C
TJ = 25°C Unless otherwise noted
Symbol
Value
Drain-Source Voltage
VDSS
60
V
Drain-Gate Voltage RGS < 1.0Mohm
V DGR
60
V
Gate-Source Voltage - Continuous
VGSS
±20
V
Drain Current - Continuous (Note 1)
ID
115
mA
MAXIMUM RATINGS P - CHANNEL - Q2 , BSS84
Rating
Units
TJ = 25°C Unless otherwise noted
Symbol
Value
Units
Drain-Source Voltage
VDSS
-50
V
Drain-Gate Voltage RGS < 20Kohm
V DGR
-50
V
Gate-Source Voltage - Continuous
VGSS
±20
V
Drain Current - Continuous (Note 1)
ID
130
mA
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient (Note 1)
Symbol
Value
Units
R thja
625
°C/W
Note 1. FR-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout
9/15/2005
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BSS8402DW
Electrical Characteristics - N-CHANNEL - Q1 , 2N7002
TJ = 25°C Unless otherwise noted
OFF CHARACTERISTICS (Note 2)
Parameter
Symbol
Min
Typ
Max
Units
60
80
-
V
TJ=25°C
-
-
1.0
TJ=125°C
-
-
500
-
-
±10
nA
Min
Typ
Max
Units
1.0
1.6
2.5
V
VGS= 5V, I D= 0.05A
-
1.8
4.5
VGS= 10V, I D= 0.5A
-
2.0
7.0
0.5
1.65
-
A
V DS= 10V, I D = 0.2A
0.08
-
-
S
Conditions
Min
Typ
Max
Units
-
-
50
pF
-
-
25
pF
-
-
5.0
pF
Min
Typ
Max
Units
-
-
20
ns
-
-
20
ns
Conditions
Drain-Source Breakdown Voltage BVDSS I D = 10µA, VGS= 0V
Zero Gate Voltage Drain Current
I DSS
VDS= 60V, V GS= 0
Gate-Body Leakage
I GSS
VGS= ±20V, V DS= 0V
µA
ON CHARACTERISTICS (Note 2)
Parameter
Symbol
Conditions
V GS(th) VDS= V GS, I D= 250µA
Gate Threshold Voltage
Static Drain-Source On-ResistanceR DS(ON)
I D(ON) VGS= 10V, V DS= 7.5V
On-State Drain Current
g FS
Forward Transconductance
Ohms
DYNAMIC CHARACTERISTICS
Parameter
Symbol
Input Capacitance
C iss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS= 25V,
VGS= 0V,
f = 1.0MHz
SWITCHING CHARACTERISTICS
Parameter
Turn-On Delay Time
Turn-Off Delay Time
Symbol
Conditions
t D(ON) V =30V, I =0.2A, R =150ohm
L
DD
D
RGEN= 25ohm, VGEN = 10V
t D(OFF)
Note 2. Short duration test pulse used to minimize self-heating
9/15/2005
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BSS8402DW
Electrical Characteristics - P-CHANNEL - Q2 , BSS84
TJ = 25°C Unless otherwise noted
OFF CHARACTERISTICS (Note 3)
Parameter
Symbol
Min
Typ
Max
Units
-50
-
-
V
VDS= -50V, VGS= 0V, T J=25°C
-
-
-15
V DS= -50V, VGS= 0V, T J=125°C
-
-
-60
V DS= -25V, V GS= 0V, T J=25°C
-
-
-0.1
V GS= ±20V, V DS= 0V
-
-
±10
nA
Conditions
Min
Typ
Max
Units
V GS(th) VDS= V GS, I D= -1mA
-0.8
1.44
-2.0
V
-
3.8
10
Ohms
0.05
-
-
S
Min
Typ
Max
Units
-
-
45
pF
-
-
25
pF
-
-
12
pF
Conditions
Drain-Source Breakdown Voltage BVDSS I D = -250µA, VGS = 0V
I DSS
Zero Gate Voltage Drain Current
I GSS
Gate-Body Leakage
µA
ON CHARACTERISTICS (Note 3)
Parameter
Symbol
Gate Threshold Voltage
Static Drain-Source On-ResistanceR DS(ON) VGS= -5V, I D= -0.1A
g FS V DS= -25V, I D= -0.1A
Forward Transconductance
DYNAMIC CHARACTERISTICS
Parameter
Symbol
Input Capacitance
C iss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Conditions
VDS= -25V,
VGS= 0V,
f = 1.0MHz
SWITCHING CHARACTERISTICS
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Turn-On Delay Time
t D(ON)
-
7.5
-
ns
Turn-Off Delay Time
t D(OFF)
VDD= -30V, I D = -0.27A,
RGEN= 50ohm, VGS= -10V
-
25
-
ns
Note 3. Short duration test pulse used to minimize self-heating
9/15/2005
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BSS8402DW
Typical Characteristics Curves - N-Channel - Q1 , 2N7002 TJ = 25°C Unless otherwise noted
1.2
5.0V
ID - Drain Source Current (A
ID - Drain-Source Current (A)
1
0.8
4.0V
0.6
VGS= 6V, 7V, 8V, 9V, 10V
0.4
3.0V
0.2
V DS =10V
1
0.8
0.6
0.4
25oC
0.2
0
0
0
1
2
3
4
0
5
1
Fig. 1. Output Characteristics
4
5
6
Fig. 2. Transfer Characteristics
10
10
RDS(ON) - On-Resistance (Ohms)
RDS(ON) - On-Resistance (Ohms)
3
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
8
6
4
V GS = 4.5V
2
V GS=10.0V
0
8
6
4
Ids=500mA
2
Ids=50mA
0
0
0.2
0.4
0.6
0.8
1
2
1.2
4
Fig. 3. On-Resistance vs. Drain Current
10
10
1.05
1
0.95
0.9
0.85
-25
0
25
50
75
100
125 150
TJ - Junction Temperature (o C)
IS - Source Current (A
ID =250µA
VGS = 0V
1
25oC
0.1
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD - Source-to-Drain Voltage (V)
Fig. 5. Threshold Voltage vs. Temperature
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8
Fig. 4. On-Resistance vs. G-S Voltage
1.1
0.8
-50
6
V GS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
V GS Threshold Voltage (NORMALIZED
2
Page 4
Fig. 6. Sourse-Drain Diode Forward Voltage
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BSS8402DW
Electrical Characteristic Curves - P-Channel - Q2 , BSS84 TJ = 25°C Unless otherwise noted
1
V GS= 6V, 7V, 8V, 9V, 10V
0.9
-ID - Drain Source Current (A)
-ID - Drain-to-Source Current (A)
1
0.8
0.7
5.0V
0.6
0.5
0.4
4.0V
0.3
0.2
3.0V
0.1
0
V DS =10V
0.8
0.6
0.4
25oC
0.2
0
0
1
2
3
4
5
0
1
Fig. 1. Output Characteristics
4
5
6
7
Fig. 2. Transfer Characteristics
10
RDS(ON) - On-Resistance (Ohms)
10
RDS(ON) - On-Resistance (Ohms)
3
-V GS - Gate-to-Source Voltage (V)
-VDS - Drain-to-Source Voltage (V)
8
V GS = 4.5V
6
4
V GS =10.0V
2
8
6
Ids=-500mA
4
2
Ids=-50mA
0
0
0
0.2
0.4
0.6
0.8
2
1
4
6
8
10
-V GS - Gate-to-Source Voltage (V)
-ID - Drain Curre nt (A)
Fig. 3. On-Resistance vs. Drain Current
Fig. 4. On-Resistance vs. G-S Voltage
1.2
10
ID =250µA
-IS - Source Current (A)
V GS Threshold Voltage (NORMALIZED
2
1.1
1
0.9
0.8
-50
-25
0
25
50
75
100
125
150
o
TJ - Junction Temperature ( C)
1
25oC
0.1
0.01
0.4
0.6
0.8
1
1.2
1.4
-VSD - Source-to-Drain Voltage (V)
Fig. 5. Threshold Voltage vs. Temperature
9/15/2005
VGS = 0V
Page 5
Fig. 6. Sourse-Drain Diode Forward Voltage
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BSS8402DW
PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS
ORDERING INFORMATION
BSS8402DW T/R7: 7 inch reel, 3K units per reel, Pin 1 towards tape sprocket holes
BSS8402DW T/R7-R: 7 inch reel, 3K units per reel, Pin 1 away from tape sprocket holes
BSS8402DW T/R13: 13 inch reel, 10K units per reel, Pin 1 towards tape sprocket holes
BSS8402DW T/R13-R: 13 inch reel, 10K units per reel, Pin 1 away from tape sprocket holes
Copyright PanJit International, Inc 2005
The inform ation presented in this docum ent is believed to be accurate and reliable. The specifications and inform ation
herein are subject to change without notice. Pan Jit m akes no warranty, representation or guarantee regarding the
suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or
system s. Pan Jit does not convey any license under its patent rights or rights of others.
9/15/2005
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