Linear LS840-2 Low noise low drift low capacitance monolithic dual n-channel jfet Datasheet

LS840 LS841 LS842
LOW NOISE LOW DRIFT
LOW CAPACITANCE
MONOLITHIC DUAL N-CHANNEL JFET
Linear Integrated Systems
FEATURES
LOW NOISE
en= 8nV/√Hz TYP.
LOW LEAKAGE
IG = 10pA TYP.
LOW DRIFT
|∆VGS1-2 /∆T|= 5µV/°C max.
LOW OFFSET VOLTAGE
IVGS1-2I= 2mV TYP.
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65° to +150°C
+150°C
Drain to Source Voltage
60V
-IG(f)
Gate Forward Current
50mA
Maximum Power Dissipation
Device Dissipation @ Free Air - Total
3
5
S2
S1
D1 2
G1
Maximum Voltage and Current for Each Transistor NOTE 1
Gate Voltage to Drain or Source
60V
-VGSS
-VDSO
G1
D1
6 D2
G2
1
S1
S2
7
G2
D2
31 X 32 MILS
BOTTOM VIEW
400mW @ +125°C
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
LS840 LS841 LS842 UNITS
5
10
40
µV/°C
|∆VGS1-2 /∆T| max. Drift vs. Temperature
CONDITIONS
VDG= 20V
|VGS1-2| max.
Offset Voltage
mV
VDG= 20V
SYMBOL
BVGSS
CHARACTERISTICS
Breakdown Voltage
MIN.
60
UNITS
V
CONDITIONS
VDS= 0
ID= 1nA
BVGGO
Gate-to-Gate Breakdown
60
ID= 200µA
TA= -55°C to +125°C
5
10
25
TYP.
--
MAX.
--
--
ID= 200µA
--
V
IG= 1nA
ID= 0
I S= 0
VDG= 20V
VGS= 0
f= 1kHz
VDG= 20V
ID= 200µA
VDG= 20V
VGS= 0
TRANSCONDUCTANCE
Yfss
Full Conduction
1000
4000
µmho
Yfs
Typical Conduction
500
1000
µmho
|Yfs1-2/Yfs|
Mismatch
--
3
%
0.6
DRAIN CURRENT
IDSS
Full Conduction
0.5
2
5
mA
|IDSS1-2/IDSS|
Mismatch at Full Conduction
--
1
5
%
GATE VOLTAGE
VGS(off) or VP
Pinchoff Voltage
1
2
4.5
V
VDS= 20V
ID= 1nA
VGS
Operating Range
0.5
--
4
V
VDS= 20V
ID= 200µA
VDG= 20V
ID= 200µA
GATE CURRENT
-IG
Operating
--
10
50
pA
-IG
High Temperature
--
--
50
nA
VDG= 20V
ID= 200µA
-IG
Reduced VDG
--
5
--
pA
VDG= 10V
ID= 200µA
-IGSS
At Full Conduction
--
--
100
pA
VDG= 20V
VDS= 0
Linear Integrated Systems
TA= +125°C
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
SYMBOL
YOSS
CHARACTERISTICS
OUTPUT CONDUCTANCE
Full Conduction
--
--
10
µmho
YOS
Operating
--
0.1
1
µmho
Differential
--
0.01
0.1
µmho
|YOS1-2|
MIN.
TYP.
MAX. UNITS
CONDITIONS
VDG= 20V
VGS= 0
VDG= 20V
ID= 200µA
COMMON MODE REJECTION
CMR
-20 log |∆VGS1-2/∆VDS|
CMR
∆VDS= 10 to 20V
--
100
--
dB
--
75
--
dB
∆VDS= 5 to 10V
ID= 200µA
VDS= 20V
f= 100Hz
VDS= 20V
NBW= 1Hz
VDS= 20V
NBW= 1Hz
VGS= 0 RG= 10MΩ
NBW= 6Hz
ID= 200µA f= 1KHz
VDS= 20V
ID= 200µA
VDG= 20V
ID= 200µA
ID= 200µA
NOISE
NF
Figure
--
--
0.5
dB
en
Voltage
--
--
10
nV/√Hz
en
Voltage
--
--
15
nV/√Hz
CISS
CAPACITANCE
Input
--
4
10
pF
CRSS
Reverse Transfer
--
1.2
5
pF
CDD
Drain-to-Drain
--
0.1
--
pF
TO-71
P-DIP
TO-78
0.320 (8.13)
0.290 (7.37)
Six Lead
0.230
DIA.
0.209
0.195
DIA.
0.175
0.030
MAX.
0.150
0.115
6 LEADS
0.500 MIN.
0.019 DIA.
0.016
0.305
0.335
0.335
0.370
MAX.
0.040 0.165
0.185
0.016
0.019
DIM. A
MIN. 0.500
0.016
0.021
DIM. B
ID= 200µA f= 10Hz
SEATING
PLANE
0.405
(10.29)
MAX.
S1
D1
SS
G1
1
2
3
4
8
7
6
5
G2
SS
D2
S2
0.200
0.100
0.050
5
6
45°
0.046
0.036
7
SOIC
2 3 4
1
5
8 7 6
2 3 4
1
8
0.100
0.029
0.045
0.150 (3.81)
0.158 (4.01)
0.100
45°
0.048
0.028
0.028
0.034
0.188 (4.78)
0.197 (5.00)
S1
D1
SS
G1
1
2
3
4
8
7
6
5
G2
SS
D2
S2
0.228 (5.79)
0.244 (6.20)
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
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