Vishay MBR1540CT 15a schottky barrier rectifier Datasheet

MBR1530CT–MBR1560CT
Vishay Lite–On Power Semiconductor
15A Schottky Barrier Rectifier
Features
D Schottky barrier chip
D Guard ring die constuction for transient
protection
D Low power loss, high efficiency
D High current capability and low forward voltage
drop
D High surge capability
D For use in low voltage, high frequency inverters,
free wheeling, and polarity protection
application
95 9630
D Plastic material – UL Recognition flammability
classification 94V–0
Absolute Maximum Ratings
Tj = 25_C
Parameter
Test
Conditions
Repetitive peak reverse voltage
g
=Working peak reverse voltage
DC Bl
ki voltage
lt
=DC
Blocking
Peak forward surge current
Average forward current
Junction and storage temperature range
Rev. A2, 24-Jun-98
TC=125°C
Type
Symbol
Value
Unit
MBR1530CT
MBR1535CT
MBR1540CT
MBR1545CT
MBR1550CT
MBR1560CT
VRRM
=VRWM
VR
=V
30
35
40
45
50
60
150
15
–65...+150
V
V
V
V
V
V
A
A
°C
IFSM
IFAV
Tj=Tstg
1 (5)
MBR1530CT–MBR1560CT
Vishay Lite–On Power Semiconductor
Electrical Characteristics
Tj = 25_C
Parameter
Forward voltage
g
Reverse current
Diode capacitance
Thermal resistance
junction to case
Voltage rate of change
( Rated VR )
Test Conditions
IF=7.5A, TC=125°C
IF=15A, TC=25°C
IF=15A, TC=125°C
IF=7.5A, TC=125°C
IF=15A, TC=25°C
IF=15A, TC=125°C
TC=25°C
TC=125°C
TC=25°C
TC=125°C
VR=4V, f=1MHz
TL=const.
Type
Symbol Min Typ
MBR1530CT
VF
–MBR1545CT
VF
VF
MBR1550CT
VF
–MBR1560CT
VF
VF
MBR1530CT
IR
–MBR1545CT
IR
MBR1550CT
IR
–MBR1560CT
IR
CD
300
RthJC
1.7
Max
0.57
0.84
0.72
0.65
0.90
0.80
0.1
15
1.0
50
Unit
V
V
V
V
V
V
mA
mA
mA
mA
pF
K/W
MBR1530CT
–MBR1540CT
MBR1545CT
–MBR1560CT
dV/dt
1000
K/W
dV/dt
10000 K/W
20
50 T = 25°C
j
IF – Forward Current ( A )
IFAV – Average Forward Current ( A )
Characteristics (Tj = 25_C unless otherwise specified)
16
12
8
4
0
50
100
MBR1530 – MBR1545
1.0
MBR1550 – MBR1560
0.2
150
Tamb – Ambient Temperature ( °C )
Figure 1. Max. Average Forward Current vs.
Ambient Temperature
2 (5)
10
0.1
0
15341
IF Pulse Width = 300 µs
2% Duty Cycle
15342
0.4
0.6
0.8
1.0
VF – Forward Voltage ( V )
Figure 2. Typ. Forward Current vs. Forward Voltage
Rev. A2, 24-Jun-98
MBR1530CT–MBR1560CT
300
10
I R – Reverse Current ( mA )
IFSM – Peak Forward Surge Current ( A )
Vishay Lite–On Power Semiconductor
250
200
150
100
50
0.1
0.01
0.001
0
0
15343
100
10
Number of Cycles at 60 Hz
15345
Figure 3. Max. Peak Forward Surge Current vs.
Number of Cycles
4000
C D – Diode Capacitance ( pF )
Tj = 125°C
Tj = 75°C
Tj = 25°C
1
20
40
60
80
100 120 140
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typ. Reverse Current vs. Percent of
Rated Peak Reverse Voltage
Tj = 25°C
f = 1 MHZ
VSIG = 50mV p–p
1000
100
0.1
15344
Tj = 150°C
1.0
1.0
10
100
VR – Reverse Voltage ( V )
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
Rev. A2, 24-Jun-98
3 (5)
MBR1530CT–MBR1560CT
Vishay Lite–On Power Semiconductor
Dimensions in mm
14468
Case: molded plastic
Polarity: as marked on body
Approx. weight: 2.24 grams
Mounting position: any
Marking: type number
4 (5)
Rev. A2, 24-Jun-98
MBR1530CT–MBR1560CT
Vishay Lite–On Power Semiconductor
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Rev. A2, 24-Jun-98
5 (5)
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