Microsemi APTGF50H60T1G Full - bridge npt igbt power module Datasheet

APTGF50H60T1G
Full - Bridge
NPT IGBT Power Module
3
4
Q3
Q1
CR1 CR3
2
5
6
1
Q4
Q2
CR2 CR4
7
9
8
11
10
NTC
12
VCES = 600V
IC = 50A* @ Tc = 80°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
• RoHS Compliant
Pins 3/4 must be shorted together
Absolute maximum ratings
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
TC = 25°C
Max ratings
600
65*
50*
230
±20
250
Tj = 125°C
100A @ 500V
TC = 25°C
TC = 80°C
TC = 25°C
Reverse Bias Safe Operating Area
Unit
V
A
August, 2007
Parameter
Collector - Emitter Breakdown Voltage
V
W
* Specification of IGBT device but output current must be limited to 40A to not exceed a delta of temperature greater
than 35°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–6
APTGF50H60T1G – Rev 0
Symbol
VCES
APTGF50H60T1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
Min
Tj = 25°C
Tj = 125°C
T
j = 25°C
VGE =15V
IC = 50A
Tj = 125°C
VGE = VCE , IC = 1mA
VGE = 20V, VCE = 0V
Typ
VGE = 0V
VCE = 600V
1.7
2.0
2.2
4
Max
250
500
2.45
Unit
µA
V
6
400
V
nA
Max
Unit
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
Td(on)
Tr
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
Td(off)
Turn-off Delay Time
Tf
Td(on)
Tr
Fall Time
Turn-on Delay Time
Rise Time
Td(off)
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min
VGE = 15V
VBus = 300V
IC = 50A
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 50A
RG = 2.7Ω
Typ
2200
323
200
166
20
100
40
9
pF
nC
ns
120
12
42
10
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 50A
RG = 2.7Ω
VGE = 15V
Tj = 125°C
VBus = 400V
IC = 50A
Tj = 125°C
RG = 2.7Ω
ns
130
21
0.5
mJ
1
Reverse diode ratings and characteristics
IRM
Min
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Max
600
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
Typ
VR=600V
IF = 30A
IF = 60A
IF = 30A
IF = 30A
VR = 400V
di/dt =200A/µs
www.microsemi.com
V
Tj = 25°C
Tj = 125°C
Tc = 80°C
Unit
25
500
Tj = 125°C
30
1.8
2.2
1.5
Tj = 25°C
25
Tj = 125°C
Tj = 25°C
160
35
Tj = 125°C
480
µA
A
2.2
August, 2007
VRRM
Test Conditions
V
ns
nC
2–6
APTGF50H60T1G – Rev 0
Symbol Characteristic
APTGF50H60T1G
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Typ
IGBT
Diode
To heatsink
M4
2500
-40
-40
-40
2.5
Max
0.5
1.2
Unit
°C/W
V
150
125
100
4.7
80
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
RT =
Min
Typ
50
3952
Max
Unit
kΩ
K
R25
T: Thermistor temperature

 1
1  RT: Thermistor value at T
exp  B25 / 85 
− 
 T25 T 

See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
www.microsemi.com
3–6
APTGF50H60T1G – Rev 0
August, 2007
SP1 Package outline (dimensions in mm)
APTGF50H60T1G
Typical Performance Curve
Output characteristics (VGE=15V)
Output Characteristics (VGE=10V)
150
250µs Pulse Test
< 0.5% Duty cycle
Ic, Collector Current (A)
TJ=25°C
100
TJ=125°C
50
0
250µs Pulse Test
< 0.5% Duty cycle
100
TJ=25°C
50
TJ=125°C
0
0
1
2
3
4
0
VCE, Collector to Emitter Voltage (V)
1
2
3
VCE, Collector to Emitter Voltage (V)
Transfer Characteristics
250µs Pulse Test
< 0.5% Duty cycle
125
100
75
50
TJ=125°C
25
TJ=25°C
0
1
2
3
4
5
6
7
8
9
VGE, Gate to Emitter Voltage (V)
TJ = 25°C
250µs Pulse Test
< 0.5% Duty cycle
7
6
Ic=100A
5
4
3
Ic=50A
2
1
Ic=25A
0
6
8
10
12
14
14
VCE=300V
12
VCE=480V
10
8
6
4
2
0
0
50
75
100 125 150 175 200
On state Voltage vs Junction Temperature
4
3.5
Ic=100A
3
Ic=50A
2.5
2
1.5
Ic=25A
250µs Pulse Test
< 0.5% Duty cycle
VGE = 15V
1
0.5
0
16
25
VGE, Gate to Emitter Voltage (V)
Breakdown Voltage vs Junction Temp.
50
75
100
TJ, Junction Temperature (°C)
125
DC Collector Current vs Case Temperature
70
1.10
1.00
0.90
0.80
25
50
75
100
125
TJ, Junction Temperature (°C)
60
50
August, 2007
1.20
Ic, DC Collector Current (A)
Collector to Emitter Breakdown
Voltage (Normalized)
25
Gate Charge (nC)
On state Voltage vs Gate to Emitter Volt.
8
VCE=120V
IC = 50A
TJ = 25°C
16
10
VCE, Collector to Emitter Voltage (V)
0
VCE, Collector to Emitter Voltage (V)
Gate Charge
18
VGE, Gate to Emitter Voltage (V)
Ic, Collector Current (A)
150
4
40
30
20
10
0
25
50
75
100
125
150
TC, Case Temperature (°C)
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4–6
APTGF50H60T1G – Rev 0
Ic, Collector Current (A)
150
APTGF50H60T1G
Turn-Off Delay Time vs Collector Current
td(off), Turn-Off Delay Time (ns)
VGE = 15V
50
40
Tj = 125°C
VCE = 400V
RG = 2.7Ω
30
20
0
25
50
75
100
125
175
150
VGE=15V,
TJ=125°C
125
100
75
50
150
0
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
VCE = 400V
RG = 2.7Ω
tf, Fall Time (ns)
tr, Rise Time (ns)
VGE=15V,
TJ=125°C
125
150
40
TJ = 125°C
30
20
TJ = 25°C
0
0
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
0
150
Turn-On Energy Loss vs Collector Current
TJ=125°C,
VGE=15V
VCE = 400V
RG = 2.7Ω
1.5
Eoff, Turn-off Energy Loss (mJ)
2
Eon, Turn-On Energy Loss (mJ)
100
10
10
1
0.5
0
0
25
50
75
100
125
2.5
25
50
75
100
125
ICE, Collector to Emitter Current (A)
150
Turn-Off Energy Loss vs Collector Current
VCE = 400V
VGE = 15V
RG = 2.7Ω
2
TJ = 125°C
1.5
1
0.5
0
150
0
ICE, Collector to Emitter Current (A)
25
50
75
100
125
150
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
3
120
Eon, 50A
2
1.5
Eoff, 50A
1
0.5
100
80
60
August, 2007
VCE = 400V
VGE = 15V
TJ= 125°C
2.5
IC, Collector Current (A)
Switching Energy Losses (mJ)
75
VCE = 400V, VGE = 15V, RG = 2.7Ω
50
40
20
50
Current Fall Time vs Collector Current
60
30
25
ICE, Collector to Emitter Current (A)
60
50
VGE=15V,
TJ=25°C
VCE = 400V
RG = 2.7Ω
40
20
Eon, 50A
0
0
0
5
10
15
20
Gate Resistance (Ohms)
25
0
200
400
600
VCE, Collector to Emitter Voltage (V)
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5–6
APTGF50H60T1G – Rev 0
td(on), Turn-On Delay Time (ns)
Turn-On Delay Time vs Collector Current
60
APTGF50H60T1G
Capacitance vs Collector to Emitter Voltage
Operating Frequency vs Collector Current
Fmax, Operating Frequency (kHz)
C, Capacitance (pF)
10000
Cies
1000
Coes
Cres
100
0
10
20
30
40
50
240
VCE = 400V
D = 50%
RG = 2.7Ω
TJ = 125°C
TC= 75°C
200
160
120
80
ZCS
ZVS
hard
switching
40
0
0
VCE, Collector to Emitter Voltage (V)
20
40
60
80
100
IC, Collector Current (A)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.4
0.7
0.3
0.5
0.2
0.3
0.1
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration (Seconds)
1
10
August, 2007
0.5
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6–6
APTGF50H60T1G – Rev 0
Thermal Impedance (°C/W)
0.6
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