Rohm EMB3 General purpose (dual digital transistors) Datasheet

EMB3 / UMB3N / IMB3A
Transistors
General purpose (dual digital transistors)
EMB3 / UMB3N / IMB3A
!External dimensions (Units : mm)
(1)
1.25
2.0
1.3
(3 )
(2)
(4)
(5 )
(6)
0.2
0.65
EMB3, UMB3N
0.65
!Features
1) Two DTA143T chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
0.1Min.
!Structure
Dual PNP digital transistor
(each with single built in resistor)
0.9
0to0.1
0.7
0.15
2.1
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
!Equivalent circuit
(1)
(2)
(3)
(4)
(5)
0.3
(6)
IMB3A
The following characteristics apply to both DTr1 and DTr2.
0.95 0.95
1.9
2.9
Abbreviated symbol: B3
1.6
(6)
DTr1
DTr2
0.3to0.6
DTr1
Each lead has same dimensions
DTr2
(4)
R1
(5)
(6)
(3)
R1=4.7kΩ
R1
(2)
ROHM : SMT6
EIAJ : SC-74
(1)
R1=4.7kΩ
!Packaging specifications
Package
Type
Taping
Code
T2R
TN
T110
Basic ordering unit (pieces)
8000
3000
3000
−
−
EMB3
UMB3N
−
IMB3N
−
−
−
!Absolute maximum ratings (Ta = 25°C)
Symbol
Limits
Unit
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−5
V
−100
mA
Parameter
IC
Collector current
Collector power
dissipation
EMB3,UMB3N
PC
IMB3A
150 (TOTAL)
mW
300 (TOTAL)
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55~+150
°C
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
0.8
0.15
(4) (5)
R1
(1)
0to0.1
(3) (2)
R1
IMB3A
1.1
2.8
EMB3, UMB3N
∗1
∗2
Abbreviated symbol: B3
EMB3 / UMB3N / IMB3A
Transistors
!Electrical characteristics (Ta = 25°C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
BVCBO
−50
−
−
V
IC=−50µA
Collector-emitter breakdown voltage
BVCEO
−50
−
−
V
IC=−1mA
Emitter-base breakdown voltage
BVEBO
−5
−
−
V
IE=−50µA
Collector cutoff current
ICBO
−
−
−0.5
µA
VCB=−50V
Emitter cutoff current
IEBO
−
−
−0.5
µA
VEB=−4V
Parameter
Conditions
VCE (sat)
−
−
−0.3
V
IC/IB=−5mA/−2.5mA
hFE
100
250
600
−
VCE=−5V, IC=−1mA
Transition frequency
fT
−
250
−
MHz
Input resistance
R1
3.29
4.7
6.11
kΩ
Collector-emitter saturation voltage
DC current transfer ratio
VCE=10mA, IE=−5mA, f=100MHz
−
∗ Transition frequency of the device
1k
VCE=−5V
DC CURRENT GAIN : hFE
500
50
−1
−500m
−200m
200
100
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
!Electrical characteristic curves
−100m
Ta=100°C
25°C
−40°C
20
10
5
2
1
−100µ −200µ −500µ −1m
−2m
lC/lB=20
Ta=100°C
25°C
−40°C
−5m −10m −20m −50m −100m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs. collector
current
−50m
−20m
−10m
−5m
−2m
−1m
−100µ −200µ −500µ −1m
−2m
−5m −10m −20m −50m −100m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
∗
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