Microsemi APTM50AM24SG Phase leg series & parallel diodes mosfet power module Datasheet

APTM50AM24SG
Phase leg
Series & parallel diodes
MOSFET Power Module
VDSS = 500V
RDSon = 24mΩ typ @ Tj = 25°C
ID = 150A @ Tc = 25°C
Application
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
VBUS
Q1
Features
G1
OUT
•
S1
Q2
G2
0/VBUS
•
•
•
VBUS
0/VBUS
Benefits
OUT
S1
•
•
•
•
•
S2
G2
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
500
150
110
600
±30
28
1250
24
30
1300
Unit
V
A
V
mΩ
W
A
July, 2006
G1
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–6
APTM50AM24SG – Rev 2
S2
Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
APTM50AM24SG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
VGS = 0V,VDS = 400V
Tj = 125°C
VGS = 10V, ID = 75A
VGS = VDS, ID = 6mA
VGS = ±30 V, VDS = 0V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
IRM
IF
VF
Maximum Reverse Leakage Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min
IF = 120A
IF = 240A
IF = 120A
IF = 120A
VR = 133V
di/dt = 400A/µs
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Typ
19.6
4.2
0.3
434
Max
500
3
28
5
±500
Unit
µA
mA
mΩ
V
nA
Max
Unit
nF
nC
120
216
Test Conditions
DC Forward Current
Diode Forward Voltage
24
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 150A
R G = 0.8Ω
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 150A, R G = 0.8Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 150A, R G = 0.8Ω
VR=200V
Typ
3
VGS = 10V
VBus = 250V
ID = 150A
Series diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Repetitive Reverse Voltage
Min
T j = 25°C
10
17
50
41
1.9
mJ
1.5
3.3
mJ
1.7
Min
200
Tj = 25°C
Tj = 125°C
Tc = 85°C
ns
Typ
Max
350
600
Tj = 125°C
120
1.1
1.4
0.9
Tj = 25°C
31
Tj = 125°C
60
Tj = 25°C
120
Tj = 125°C
500
Unit
V
µA
A
1.15
V
ns
July, 2006
IDSS
Test Conditions
VGS = 0V,VDS = 500V
nC
2–6
APTM50AM24SG – Rev 2
Symbol Characteristic
APTM50AM24SG
Parallel diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Repetitive Reverse Voltage
IRM
Maximum Reverse Leakage Current
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Min
600
Tj = 25°C
Tj = 125°C
Tc = 70°C
VR=600V
IF = 120A
IF = 240A
IF = 120A
Symbol Characteristic
Min
Transistor
Diodes
RthJC
Junction to Case Thermal Resistance
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
120
1.6
1.9
1.4
130
170
440
1840
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Thermal and package characteristics
To heatsink
For terminals
M6
M5
Max
350
600
Tj = 125°C
IF = 120A
VR = 400V
di/dt = 400A/µs
Typ
2500
-40
-40
-40
3
2
Typ
Unit
V
µA
A
1.8
V
ns
nC
Max
0.10
0.46
Unit
°C/W
V
150
125
100
5
3.5
280
°C
N.m
g
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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3–6
APTM50AM24SG – Rev 2
July, 2006
SP6 Package outline (dimensions in mm)
APTM50AM24SG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.1
0.9
0.08
0.7
0.06
0.5
0.04
0.3
0.1
0.02
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
8V
V GS=10&15V
480
7V
360
6.5V
240
6V
120
VDS > ID(on)xR DS(on)MAX
250µs pulse test @ < 0.5 duty cycle
420
7.5V
I D, Drain Current (A)
5.5V
360
300
240
180
T J=25°C
120
60
TJ=125°C
T J=-55°C
0
0
0
5
10
15
20
VDS, Drain to Source Voltage (V)
25
0
RDS(on) vs Drain Current
Normalized to
VGS=10V @ 75A
1.15
VGS=10V
1.10
V GS=20V
1.05
2
3
4
5
6
7
8
DC Drain Current vs Case Temperature
160
I D, DC Drain Current (A)
1.20
1
VGS, Gate to Source Voltage (V)
1.00
0.95
0.90
120
80
40
0
0
60
120
180
240
300
360
ID, Drain Current (A)
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25
50
75
100
125
TC, Case Temperature (°C)
150
July, 2006
I D, Drain Current (A)
10
480
600
RDS(on) Drain to Source ON Resistance
1
4–6
APTM50AM24SG – Rev 2
Thermal Impedance (°C/W)
0.12
1.1
1.0
0.9
0.8
-50 -25
0
25 50
75 100 125 150
ON resistance vs Temperature
2.5
VGS=10V
ID=75A
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1000
1.1
ID, Drain Current (A)
VGS (TH), Threshold Voltage
(Normalized)
1.2
1.0
0.9
0.8
0.7
0.6
100
limited by RDSon
1ms
Single pulse
TJ =150°C
TC=25°C
10
10ms
1
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
1
Capacitance vs Drain to Source Voltage
VGS , Gate to Source Voltage (V)
100000
Ciss
10000
Coss
1000
Crss
100
10
0
10
20
30
40
VDS, Drain to Source Voltage (V)
50
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
V DS=100V
I D=150A
12 T =25°C
J
V =250V
DS
10
VDS=400V
8
6
4
2
0
0
100
200 300 400
Gate Charge (nC)
500
600
July, 2006
C, Capacitance (pF)
100µs
limited by R DSon
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5–6
APTM50AM24SG – Rev 2
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.2
RDS(on), Drain to Source ON resistance
(Normalized)
APTM50AM24SG
APTM50AM24SG
Delay Times vs Current
Rise and Fall times vs Current
60
80
VDS=333V
RG=0.8Ω
TJ=125°C
L=100µH
60
td(off)
40
t r and tf (ns)
t d(on) and td(off) (ns)
50
V DS =333V
RG =0.8Ω
T J=125°C
L=100µH
30
20
td(on)
tf
40
20
tr
10
0
0
30
80
130
180
230
ID, Drain Current (A)
280
30
5
4
Eoff
2
1
280
VDS=333V
ID=150A
TJ=125°C
L=100µH
6
Eoff
Eon
4
Eoff
2
0
0
30
80
130
180
230
0
280
ID, Drain Current (A)
Operating Frequency vs Drain Current
400
300
IDR, Reverse Drain Current (A)
ZVS
500
VDS=333V
D=50%
RG=0.8Ω
T J=125°C
T C=75°C
ZCS
200
Hard
switching
100
0
30
60
90
120
1
2
3
4
5
6
7
8
9
Gate Resistance (Ohms)
600
Frequency (kHz)
230
Switching Energy vs Gate Resistance
Eon
3
180
8
Switching Energy (mJ)
Switching Energy (mJ)
VDS=333V
RG=0.8Ω
T J=125°C
L=100µH
6
130
I D, Drain Current (A)
Switching Energy vs Current
7
80
150
Source to Drain Diode Forward Voltage
10000
1000
T J=150°C
100
T J=25°C
10
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6–6
APTM50AM24SG – Rev 2
July, 2006
ID, Drain Current (A)
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