BAS 40-07W Silicon Schottky Diode Preliminary data 3 • General-purpose diode for high-speed switching 4 • Circuit protection • Voltage clamping • High-level detecting and mixing • Available with CECC quality assessment 2 1 VPS05605 BAS 40-07W Type Marking Ordering Code Pin Configuration BAS 40-07W 47s 1=C1 Q62702- 2=C2 3=A2 Package 4=A1 SOT-343 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 40 V Forward current IF 120 mA Surge forward current, t ≤ 10ms I FSM 200 Total power dissipation, T S ≤ 81°C Ptot 250 mW Junction temperature Tj 150 °C Operating temperature range T op - 55 ...+150 Storage temperature T stg - 55 ...+150 Maximum Ratings Junction - ambient 1) Junction - soldering point RthJA ≤ 345 RthJS ≤ 275 K/W 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Semiconductor Group Semiconductor Group 11 Sep-09-1998 1998-11-01 BAS 40-07W Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Parameter Values Unit min. typ. max. 40 - - DC characteristics Breakdown voltage V(BR) V I (BR) = 10 µA Reverse current µA IR VR = 30 V - - 1 VR = 40 V - - 10 Forward voltage mV VF I F = 1 mA - 310 380 I F = 10 mA - 450 500 I F = 40 mA - 720 1000 CT - 4 5 pF τ - - 100 ps rf - 10 - Ω AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Charge carrier life time I F = 25 mA Differential forward resistance I F = 10 mA, f = 10 kHz Semiconductor Group Semiconductor Group 22 Sep-09-1998 1998-11-01 BAS 40-07W Forward current IF = f V F) Reverse current IR = f (VR) T A = 25°C TA = Parameter Diode capacitance CT = f (V R) f = 1MHz Differential forward resistance rf = f (IF) f = 10 kHz Semiconductor Group Semiconductor Group 33 Sep-09-1998 1998-11-01 BAS 40-07W Forward current IF = f (TA*; T S) * Package mounted on alumina Semiconductor Group Semiconductor Group 44 Sep-09-1998 1998-11-01