ON NTGS3443T1G Power mosfet 4.4 amps, 20 volt Datasheet

NTGS3443, NVGS3443
Power MOSFET
4.4 Amps, 20 Volts
P−Channel TSOP−6
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Features
•
•
•
•
•
Ultra Low RDS(on)
Higher Efficiency Extending Battery Life
Miniature TSOP−6 Surface Mount Package
These Devices are Pb−Free and are RoHS Compliant
NVGS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
4.4 AMPERES
20 VOLTS
RDS(on) = 65 mW
P−Channel
1 2 5 6
Applications
• Power Management in Portable and Battery−Powered Products,
3
i.e.: Cellular and Cordless Telephones, and PCMCIA Cards
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
4
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−20
Volts
Gate−to−Source Voltage − Continuous
VGS
"12
Volts
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
− Pulsed Drain Current (Tp t 10 mS)
RqJA
Pd
ID
IDM
244
0.5
−2.2
−10
°C/W
Watts
Amps
Amps
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
− Pulsed Drain Current (Tp t 10 mS)
RqJA
Pd
ID
IDM
128
1.0
−3.1
−14
°C/W
Watts
Amps
Amps
Thermal Resistance
Junction−to−Ambient (Note 3)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
− Pulsed Drain Current (Tp t 10 mS)
RqJA
Pd
ID
IDM
62.5
2.0
−4.4
−20
°C/W
Watts
Amps
Amps
Operating and Storage Temperature Range
TJ, Tstg
−55 to
150
°C
Maximum Lead Temperature for Soldering
Purposes for 10 Seconds
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Minimum FR−4 or G−10 PCB, operating to steady state.
2. Mounted onto a 2 in square FR−4 board (1 in sq, 2 oz. Cu. 0.06″ thick single
sided), operating to steady state.
3. Mounted onto a 2 in square FR−4 board (1 in sq, 2 oz. Cu. 0.06″ thick single
sided), t t 5.0 seconds.
© Semiconductor Components Industries, LLC, 2012
December, 2012 − Rev. 5
1
MARKING DIAGRAM &
PIN ASSIGNMENT
Drain Drain Source
6 5 4
443 M G
G
1
TSOP−6
CASE 318G
STYLE 1
1 2 3
Drain Drain Gate
443
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
NTGS3443T1G
TSOP−6
(Pb−Free)
3000 / Tape & Reel
NVGS3443T1G
TSOP−6
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTGS3443T1/D
NTGS3443, NVGS3443
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Notes 4 & 5)
Symbol
Min
Typ
Max
−20
−
−
−
−
−
−
−1.0
−5.0
−
−
−100
−
−
100
−0.60
−0.95
−1.50
−
−
−
0.058
0.082
0.092
0.065
0.090
0.100
−
8.8
−
Ciss
−
565
−
pF
Coss
−
320
−
pF
Crss
−
120
−
pF
td(on)
−
10
25
ns
tr
−
18
45
ns
td(off)
−
30
50
ns
tf
−
31
50
ns
Qtot
−
7.5
15
nC
Qgs
−
1.4
−
nC
Qgd
−
2.9
−
nC
(IS = −1.7 Adc, VGS = 0 Vdc)
VSD
−
−0.83
−1.2
Vdc
(IS = −1.7 Adc, dIS/dt = 100 A/ms)
trr
−
30
−
ns
Characteristic
Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0 Vdc, ID = −10 mA)
V(BR)DSS
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = −20 Vdc, TJ = 25°C)
(VGS = 0 Vdc, VDS = −20 Vdc, TJ = 70°C)
IDSS
Gate−Body Leakage Current
(VGS = −12 Vdc, VDS = 0 Vdc)
IGSS
Gate−Body Leakage Current
(VGS = +12 Vdc, VDS = 0 Vdc)
IGSS
Vdc
mAdc
nAdc
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = −250 mAdc)
VGS(th)
Static Drain−Source On−State Resistance
(VGS = −4.5 Vdc, ID = −4.4 Adc)
(VGS = −2.7 Vdc, ID = −3.7 Adc)
(VGS = −2.5 Vdc, ID = −3.5 Adc)
RDS(on)
Forward Transconductance
(VDS = −10 Vdc, ID = −4.4 Adc)
gFS
Vdc
W
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = −5.0 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = −20 Vdc, ID = −1.0 Adc,
VGS = −4.5 Vdc, Rg = 6.0 W)
Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
(VDS = −10 Vdc, VGS = −4.5 Vdc,
ID = −4.4 Adc)
BODY−DRAIN DIODE RATINGS
Diode Forward On−Voltage
Reverse Recovery Time
4. Indicates Pulse Test: P.W. = 300 msec max, Duty Cycle = 2%.
5. Handling precautions to protect against electrostatic discharge are mandatory.
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2
NTGS3443, NVGS3443
TYPICAL ELECTRICAL CHARACTERISTICS
−ID, DRAIN CURRENT (AMPS)
VDS≥ = −10 V
TJ = 25°C
VGS = −3 V
VGS = −4.5 V
VGS = −4 V
VGS = −3.5 V
VGS = −2 V
4
2
VGS = −1.5 V
0
0.4
0.8
1.2
1.6
4
TJ = 25°C
2
TJ = 125°C
0
0.6
1.4
1.8
2.2
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
ID = −4.4 A
TJ = 25°C
0.3
0.25
0.2
0.15
0.1
0.05
2
2.5
3
3.5
4
4.5
5
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
3
0.16
TJ = 25°C
0.14
VGS = −2.5 V
0.12
VGS = −2.7 V
0.1
0.08
VGS = −4.5 V
0.06
0.04
0
1
2
3
4
5
6
7
8
−ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100
1.5
TJ = 125°C
ID = −4.4 A
VGS = −4.5 V
1.3
1.2
1.1
1
0.9
TJ = 100°C
10
1
TJ = 25°C
0.1
0.8
0.7
−50
2.6
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.35
1.4
1
TJ = −55°C
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.4
0
1.5
6
2
RDS(on), DRAIN−TO−SOURCE RESISTANCE (OHMS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (OHMS)
VGS = −2.5 V
6
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
8
VGS = −5 V
−IDSS, LEAKAGE (nA)
−ID, DRAIN CURRENT (AMPS)
8
VGS = 0 V
−25
0
25
50
75
100
125
0.01
150
0
4
8
12
16
TJ, JUNCTION TEMPERATURE (°C)
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
20
NTGS3443, NVGS3443
TYPICAL ELECTRICAL CHARACTERISTICS
5
1200
800
600
Ciss
400
Coss
200
VGS(th), GATE THRESHOLD VOLTAGE
(NORMALIZED)
0
QT
VGS
4
3
Q1
Q2
2
1
TJ = 25°C
ID = −4.4 A
Crss
0
2
4
6
8
10
12
14
16
18
0
20
1
2
3
4
5
6
7
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1.3
4
ID = −250 mA
1.2
1.1
1
0.9
0.8
0.7
0.6
−50
0
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−IS, SOURCE CURRENT (AMPS)
C, CAPACITANCE (pF)
1000
−VGS, GATE−TO−SOURCE
VOLTAGE (VOLTS)
TJ = 25°C
VGS = 0 V
−25
0
25
50
75
100
125
150
VGS = 0 V
3
TJ = 150°C
2
TJ = 25°C
1
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
TJ, JUNCTION TEMPERATURE (°C)
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Gate Threshold Voltage Variation
with Temperature
Figure 10. Diode Forward Voltage vs. Current
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4
8
1
NTGS3443, NVGS3443
TYPICAL ELECTRICAL CHARACTERISTICS
20
POWER (W)
16
12
8
4
0
0.01
0.10
1.00
10.00
100.00
TIME (sec)
NORMALIZED EFFECTIVE TRANSIENT
THERMAL IMPEDANCE
Figure 11. Single Pulse Power
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1E−04
Single Pulse
1E−03
1E−02
1E−01
1E+00
1E+01
1E+02
SQUARE WAVE PULSE DURATION (sec)
Figure 12. Normalized Thermal Transient Impedance, Junction−to−Ambient
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5
1E+03
NTGS3443, NVGS3443
PACKAGE DIMENSIONS
TSOP−6
CASE 318G−02
ISSUE V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM
LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR
GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D
AND E1 ARE DETERMINED AT DATUM H.
5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE.
D
ÉÉÉ
ÉÉÉ
6
E1
1
NOTE 5
5
2
H
L2
4
GAUGE
PLANE
E
3
L
b
C
DETAIL Z
e
0.05
M
SEATING
PLANE
c
A
A1
DETAIL Z
DIM
A
A1
b
c
D
E
E1
e
L
L2
M
MIN
0.90
0.01
0.25
0.10
2.90
2.50
1.30
0.85
0.20
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.38
0.50
0.18
0.26
3.00
3.10
2.75
3.00
1.50
1.70
0.95
1.05
0.40
0.60
0.25 BSC
10°
−
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
RECOMMENDED
SOLDERING FOOTPRINT*
6X
0.60
3.20
6X
0.95
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTGS3443T1/D
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