Infineon BCP49 Npn silicon darlington transistor Datasheet

BCP29, BCP49
NPN Silicon Darlington Transistors
For general AF applications
4
High collector current
High current gain
Complementary types: BCP28/48 (PNP)
3
2
C(2,4)
1
B(1)
VPS05163
E(3)
EHA00009
Type
Marking
Pin Configuration
Package
BCP29
BCP 29
1=B
2=C
3=E
4=C
SOT223
BCP49
BCP 49
1=B
2=C
3=E
4=C
SOT223
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Unit
BCP29
BCP49
VCEO
30
60
Collector-base voltage
VCBO
40
80
Emitter-base voltage
VEBO
10
10
DC collector current
IC
500
mA
Peak collector current
ICM
800
mA
Base current
IB
100
Peak base current
IBM
200
Total power dissipation, TS = 124 °C
Ptot
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
V
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
17
K/W
1For calculation of R
thJA please refer to Application Note Thermal Resistance
1
Nov-29-2001
BCP29, BCP49
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
BCP29
30
-
-
BCP49
60
-
-
BCP29
40
-
-
BCP49
80
-
-
10
-
-
Collector-base breakdown voltage
IC = 100 µA, IE = 0
V
V(BR)CEO
V(BR)CBO
Emitter-base breakdown voltage
V(BR)EBO
IE = 10 µA, IC = 0
Collector cutoff current
nA
ICBO
VCB = 30 V, IE = 0
BCP29
-
-
100
VCB = 60 V, IE = 0
BCP49
-
-
100
Collector cutoff current
µA
ICBO
VCB = 30 V, IE = 0 , TA = 150 °C
BCP29
-
-
10
VCB = 60 V, IE = 0 , TA = 150 °C
BCP49
-
-
10
-
-
100
Emitter cutoff current
IEBO
nA
VEB = 5 V, IC = 0
DC current gain 1)
IC = 100 µA, VCE = 1 V
BCP29
4000
-
-
BCP49
2000
-
-
BCP29
10000
-
-
BCP49
4000
-
-
BCP29
20000
-
-
BCP49
10000
-
-
BCP29
4000
-
-
BCP49
2000
-
-
DC current gain 1)
IC = 10 mA, VCE = 5 V
hFE
DC current gain 1)
IC = 100 mA, VCE = 5 V
hFE
DC current gain 1)
IC = 500 mA, VCE = 5 V
-
hFE
hFE
1) Pulse test: t ≤ 300µs, D = 2%
2
Nov-29-2001
BCP29, BCP49
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
VCEsat
-
-
1
VBEsat
-
-
1.5
fT
-
200
-
MHz
Ccb
-
6.5
-
pF
DC Characteristics
Collector-emitter saturation voltage1)
V
IC = 100 mA, IB = 0.1 mA
Base-emitter saturation voltage 1)
IC = 100 mA, IB = 0.1 mA
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
1) Pulse test: t ≤ 300µs, D = 2%
3
Nov-29-2001
BCP29, BCP49
Total power dissipation Ptot = f(TS)
Collector cutoff current ICBO = f (T A)
VCB = V CEmax
10 4
1650
mW
Ι CBO
BCP 29/49
EHP00251
nA
1350
1200
P tot
max
10 3
1050
900
10 2
750
typ
600
10 1
450
300
150
0
0
10 0
15
30
45
60
75
90 105 120
°C 150
TS
0
50
100
Permissible pulse load
VCE = 5V
Ptotmax / PtotDC = f (tp)
fT
BCP 29/49
150
TA
Transition frequency fT = f (IC)
10 3
˚C
EHP00252
10 3
BCP 29/49
Ptot max
5
Ptot DC
MHz
EHP00253
D=
tp
T
tp
T
10 2
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
10 2
5
10 1
5
10 1
10 0
10 1
10 2
mA
10 0
10 -6
10 3
ΙC
10 -5
10 -4
10 -3
10 -2
s
10 0
tp
4
Nov-29-2001
BCP29, BCP49
DC current gain hFE = f (IC )
Collector-emitter saturation voltage
VCE = 5V
IC = f (VCEsat), h FE = 1000
10 6
BCP 29/49
EHP00255
5
h FE
ΙC
125 ˚C
10 5
BCP 29/49
10 3
EHP00256
mA
150 ˚C
25 ˚C
-50 ˚C
10 2
25 ˚C
5
5
-55 ˚C
10 4
10 1
5
5
10 3
10 -1
10 0
10 1
10 0
10 2 mA 10 3
0
0.5
1.0
ΙC
V
V CEsat
Collector-base capacitance CCB = f (VCBO)
Base-emitter saturation voltage
Emitter-base capacitance CEB = f (VEBO )
IC = f (VBEsat), hFE = 1000
10
CEB0
(CCB0 )
BCP 29/49
1.5
EHP00257
10 3
ΙC
pF
BCP 29/49
EHP00258
mA
150 ˚C
25 ˚C
-50 ˚C
10 2
5
CCB0
5
CEB0
10 1
5
0
10 -1
10 0
10 0
10 1
V EB0 (V CB0 )
V
0
1.0
2.0
V
3.0
V BEsat
5
Nov-29-2001
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