PHILIPS BTA216-800F Three quadrant triacs guaranteed commutation Datasheet

Philips Semiconductors
Objective specification
Three quadrant triacs
guaranteed commutation
GENERAL DESCRIPTION
BTA216 series D, E and F
QUICK REFERENCE DATA
Passivated guaranteed commutation
triacs in a plastic envelope intended for
use in motor control circuits or with other
highly inductive loads. These devices
balance the requirements of commutation
performance and gate sensitivity. The
"sensitive gate" E series and "logic level"
D series are intended for interfacing with
low power drivers, including micro
controllers.
PINNING - TO220AB
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
SYMBOL
PARAMETER
MAX.
MAX.
UNIT
600D
600E
600F
600
800E
800F
800
V
16
140
16
140
A
A
BTA216BTA216BTA216Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
VDRM
IT(RMS)
ITSM
PIN CONFIGURATION
SYMBOL
tab
T2
tab
T1
G
1 23
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VDRM
Repetitive peak off-state
voltages
IT(RMS)
RMS on-state current
ITSM
Non-repetitive peak
on-state current
I2t
dIT/dt
IGM
VGM
PGM
PG(AV)
Tstg
Tj
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
CONDITIONS
MIN.
-
full sine wave;
Tmb ≤ 99 ˚C
full sine wave;
Tj = 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 20 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
over any 20 ms
period
Storage temperature
Operating junction
temperature
MAX.
-600
6001
UNIT
-800
800
V
-
16
A
-
140
150
98
100
A
A
A2s
A/µs
-
2
5
5
0.5
A
V
W
W
-40
-
150
125
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
October 1999
1
Rev 1.100
Philips Semiconductors
Objective specification
Three quadrant triacs
guaranteed commutation
BTA216 series D, E and F
THERMAL RESISTANCES
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
in free air
junction to ambient
Rth j-a
CONDITIONS
MIN.
TYP.
MAX.
UNIT
-
60
1.2
1.7
-
K/W
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
IGT
Gate trigger current2
IL
Latching current
VD = 12 V; IT = 0.1 A
T2+ G+
T2+ GT2- GVD = 12 V; IGT = 0.1 A
T2+ G+
T2+ GT2- G-
IH
Holding current
VT
VGT
On-state voltage
Gate trigger voltage
ID
Off-state leakage current
TYP.
BTA216-
MAX.
UNIT
...D
...E
...F
-
-
5
5
5
10
10
10
25
25
25
mA
mA
mA
-
-
15
25
25
20
30
30
25
40
40
mA
mA
mA
VD = 12 V; IGT = 0.1 A
-
-
15
25
30
mA
IT = 20 A
VD = 12 V; IT = 0.1 A
VD = 400 V; IT = 0.1 A;
Tj = 125 ˚C
VD = VDRM(max);
Tj = 125 ˚C
0.25
1.2
0.7
0.4
1.5
1.5
-
V
V
V
-
0.1
0.5
mA
MIN.
TYP.
MAX.
UNIT
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
BTA216VDM = 67% VDRM(max);
Tj = 110 ˚C; exponential
waveform; gate open
circuit
VDM = 400 V; Tj = 110 ˚C;
IT(RMS) = 16 A;
dVcom/dt = 20v/µs; gate
open circuit
...D
...E
...F
30
60
70
-
-
V/µs
1.8
3.5
4.5
-
-
A/ms
dVD/dt
Critical rate of rise of
off-state voltage
dIcom/dt
Critical rate of change of
commutating current
dIcom/dt
Critical rate of change of
commutating current
VDM = 400 V; Tj = 110 ˚C;
IT(RMS) = 16 A;
dVcom/dt = 0.1v/µs; gate
open circuit
4.3
5.3
6.3
-
-
A/ms
tgt
Gate controlled turn-on
time
ITM = 20 A; VD = VDRM(max);
IG = 0.1 A; dIG/dt = 5 A/µs
-
-
-
2
-
µs
2 Device does not trigger in the T2-, G+ quadrant.
October 1999
2
Rev 1.100
Philips Semiconductors
Objective specification
Three quadrant triacs
guaranteed commutation
BTA216 series D, E and F
MECHANICAL DATA
Dimensions in mm
4,5
max
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max 1 2 3
(2x)
0,9 max (3x)
2,54 2,54
0,6
2,4
Fig.1. SOT78 (TO220AB). pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1999
3
Rev 1.100
Philips Semiconductors
Objective specification
Three quadrant triacs
guaranteed commutation
BTA216 series D, E and F
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1999
4
Rev 1.100
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