NTE NTE3028 Infrared emitting diode pn gallium arsenide Datasheet

NTE3028
Infrared Emitting Diode
PN Gallium Arsenide
Description:
The NTE3028 is designed for applications requiring high power output, low drive power, and very fast
response time. This device is used in industrial processing and control, light modulators, shaft or position encoders, punched card readers, optical switching, and logic circuits. It is spectrally matched for
use with silicon detectors.
Features:
D High Power Output
D Infrared Emission
D Low Drive Current
D Popular TO18 Type Package for Easy Handling and Mounting
Absolute Maximum Ratings:
Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Forward Current, IF
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
Peak (PW = 100µs, Duty Cycle = 2%) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW
Derate Above 25°C (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.27mW/°C
Operating Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Note 1. Printed circuit board mounting.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Min
Typ
Max
Unit
VR = 3V
–
2
–
nA
V(BR)R
IR = 100µA
6
20
–
V
Forward Voltage
VF
IF = 50mA
–
1.32
1.5
V
Total Capacitance
CT
VR = 0V, f = 1MHz
–
18
–
pF
Reverse Leakage Current
Reverse Breakdown Voltage
Symbol
IR
Test Conditions
Optical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Total Output Power
PO
Test Conditions
Min
Typ
Max
Unit
–
2.5
–
mW
IF = 100mA, Note 2, Note 3
1.0
4.0
–
mW
IF = 100mA, Note 3, Note 4
–
1.5
–
mW/
steradian
IF = 60mA, Note 2
Radiant Intensity
IO
Peak Emission Wavelength
λP
–
940
–
nm
Spectral Line Half Width
∆λ
–
40
–
nm
Note 2. Power Output, PO, is the total power radiated by th device into a solid angle of 2π steradians.
It is measured by directing all radiation leaving the device, within this solid angle, onto a calibrated silicon solar cell.
Note 3. PW = 100µs, Duty Cycle = 2%.
Note 4. Irradiance from a Light Emitting Diode (LED) can be calculated by:
I
H = e2
d
where
H is irradiance in mW/cm2
Ie is radiant intensity in mW/steradian
d2 is distance from LED to the detector in cm
.186 (4.72) Dia
.145 (3.68) Dia
.030 (.762)
Seating Plane
Anode
.195
(4.95)
Cathode
.500
(12.7)
Min
.018 (0.45) Dia Typ
.040 (1.02)
.220 (5.59) Dia
.100 (2.54)
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